JPWO2007145165A1 - Stage apparatus, exposure apparatus, and device manufacturing method - Google Patents

Abstract

The stage device (WST) holds the base (63), the first moving member (62) movable with respect to the base (63), the object (W) and the first moving member (62). A second moving member (61) movable relative to the object W and a measuring device (100, 120) for measuring the characteristics of the energy beam (EL) irradiated to the object W are provided. At least a part of the measuring device (100, 120) is installed on the first moving member (62).

Description

The present invention relates to a stage apparatus and an exposure apparatus using the stage apparatus, and more particularly to an exposure apparatus used in a lithography process when manufacturing electronic devices such as semiconductor elements (integrated circuits) and liquid crystal display elements.
This application claims priority based on Japanese Patent Application No. 2006-162252 for which it applied on June 12, 2006, and uses the content here.

  Conventionally, a projection exposure apparatus is used in a lithography process for manufacturing an electronic device such as a semiconductor element (such as an integrated circuit) or a liquid crystal display element. A step-and-repeat reduction projection exposure apparatus (so-called stepper) that transfers an image of a mask (or reticle) pattern to each of a plurality of shot areas on a photosensitive substrate such as a wafer or glass plate coated with a photosensitive agent. ) And step-and-scan projection exposure apparatuses (so-called scanning steppers (also called scanners)) are mainly used.

  In the projection exposure apparatus, it is necessary to move the table on the stage very quickly for high productivity, and the size of the linear motor for driving the table has been increased. However, the larger the linear motor, the higher the power consumption and manufacturing cost.

  On the other hand, with the miniaturization of patterns due to higher integration of integrated circuits, higher resolution (resolution) has been required year by year. For this reason, the exposure light has a shorter wavelength and the numerical aperture of the projection optical system ( The increase in NA) has progressed gradually. This improves the resolving power of the projection exposure apparatus, but causes a reduction in the depth of focus and makes it difficult to adjust the height of the table (in the depth of focus direction). It is also necessary to adjust the position of the table in the moving direction with high accuracy while moving the table very quickly.

One solution to these problems is to reduce the weight of the table, which is a moving object. If the table is lightened, it becomes easy to move the table at high speed and with high accuracy. For this reason, lightweight and highly rigid ceramic tables are used. However, photosensitive wafers such as table wafers or glass plates are becoming larger, and it is extremely difficult to reduce the weight of the table.
JP 2004-128308 A

  When performing transfer exposure on a photosensitive substrate such as a wafer or a glass plate via a projection optical system, it is necessary to measure the amount of energy beam (exposure light), unevenness in the amount of light of the beam, and the like. Therefore, various sensors and accompanying parts are attached to the upper surface of the table. In addition, a sensor for confirming the positional relationship between the projection optical system and the table, and accompanying components are also attached. The presence of these sensors has also been a cause of hindering weight reduction and size reduction of the table.

  An object of the present invention is to propose a stage apparatus, an exposure apparatus, and a device manufacturing method capable of reducing the weight of a table that moves while holding a substrate.

  In the stage apparatus, the exposure apparatus, and the device manufacturing method according to the present invention, the following configuration corresponding to each drawing shown in the embodiment is adopted. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.

According to the first aspect of the present invention, the base portion (63), the first moving member (62) movable with respect to the base portion, and the object (W) are held and moved with respect to the first moving member. A stage comprising a possible second moving member (61) and a measuring device (100, 120) that measures the characteristics of an energy beam (EL) that is at least partially installed on the first moving member and is irradiated onto an object. An apparatus is provided.
According to the first aspect, the second moving member can be reduced in weight and size, so that the second moving member can be moved at high speed and with high accuracy.

  According to the second aspect of the present invention, an exposure apparatus (EX) that forms a predetermined image on a substrate (W) held on a substrate stage (WST), wherein the stage apparatus according to the first aspect is a substrate stage. An exposure apparatus using the above is provided. According to the second aspect, the productivity (throughput) of the exposure apparatus can be improved.

  According to a third aspect of the present invention, there is provided a device manufacturing method including a lithography process, which uses the exposure apparatus (EX) according to the second aspect in the lithography process. According to the present invention, a high-performance device can be manufactured with high efficiency.

According to each aspect of the present invention, since the measuring device is installed on the first moving member, the second moving member can be reduced in weight or size, and the second moving member can be moved with high accuracy and high speed. Become.
Therefore, the exposure apparatus can be increased in throughput, and a high-performance and inexpensive device can be manufactured.

It is a figure which shows schematic structure of the exposure apparatus which concerns on embodiment. It is a perspective view which shows the structure of the wafer stage which concerns on embodiment. It is an expansion perspective view of the wafer stage concerning an embodiment. It is sectional drawing which shows schematic structure of the wafer stage which concerns on embodiment. It is a flowchart figure which shows an example of the manufacturing process of the microdevice which concerns on embodiment.

Explanation of symbols

  61 ... Fine movement table (second moving member) 62 ... Coarse movement table (first moving member) 63 ... Wafer surface plate (base portion) 67 ... Surface adjustment mechanism (position adjustment device) 90 ... Actuator (drive device) 100 ... First One sensor (measuring device) 102 ... exposure amount sensor 104 ... wavefront aberration sensor 106 ... illuminance unevenness sensor 120 ... second sensor (measuring device) 122 ... incident light guide part (light receiving part) 124 ... intermediate light guide part (light guide part) ) 126... Light guiding part (light transmitting part) 128... Light receiving sensor (sensor part) EX... Exposure apparatus EL .. Exposure light (energy beam) R .. Reticle (mask) PA .. Pattern WST ... Wafer stage (stage apparatus, substrate) Stage) W ... Wafer (object, photosensitive substrate, substrate)

Embodiments of a stage apparatus, an exposure apparatus, and a device manufacturing method according to the present invention will be described below with reference to the drawings.
FIG. 1 is a view showing a schematic configuration of an exposure apparatus EX according to an embodiment of the present invention.

  The exposure apparatus EX transfers the pattern PA formed on the reticle R to each shot area on the wafer W via the projection optical system PL while moving the reticle R and the wafer W synchronously in the one-dimensional direction. A scanning type exposure apparatus, that is, a so-called scanning stepper.

  The exposure apparatus EX includes an illumination optical system IL that illuminates the reticle R with exposure light EL, a reticle stage RST that can move while holding the reticle R, and projection optics that projects the exposure light EL emitted from the reticle R onto the wafer W. The system PL, a wafer stage WST that can be moved while holding the wafer W via the wafer holder WH, a control device CONT that comprehensively controls the exposure apparatus EX, and the like are provided.

  In the following description, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, and the synchronous movement direction (scanning direction) between the reticle R and the wafer W in the plane perpendicular to the Z-axis direction is the X-axis. The direction perpendicular to the direction, the Z-axis direction, and the Y-axis direction (non-scanning direction) is defined as the Y-axis direction. In addition, the rotation (inclination) directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively.

  The illumination optical system IL illuminates the reticle R supported by the reticle stage RST with the exposure light EL. The illumination optical system IL includes an exposure light source that emits exposure light EL, an optical integrator that equalizes the illuminance of the exposure light EL emitted from the exposure light source, a condenser lens that collects the exposure light EL from the optical integrator, and a relay. A lens system, a variable field stop for setting the illumination area on the reticle R by the exposure light EL in a slit shape, and the like (both not shown) are provided. The predetermined illumination area on the reticle R is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL.

As the exposure light EL emitted from the illumination optical system IL, for example, far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, DUV light), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm), or the like is used.

The reticle stage RST is movable while holding the reticle R, and holds the reticle R by vacuum suction with the reticle holder RH.
Reticle stage RST can be moved two-dimensionally in a plane perpendicular to optical axis AX of projection optical system PL, that is, in the XY plane, and can be slightly rotated in the θZ direction.
The reticle stage RST is driven by a reticle stage drive unit RSTD such as a linear motor. Reticle stage driving unit RSTD is controlled by control unit CONT.
The detailed configuration of reticle holder RH will be described later.

  A movable mirror 51 is provided on the reticle stage RST. A laser interferometer 52 is provided at a position facing the moving mirror 51. The position of the reticle R on the reticle stage RST in the two-dimensional direction (XY direction) and the rotation angle in the θZ direction (including rotation angles in the θX and θY directions in some cases) are measured in real time by the laser interferometer 52. The measurement result of the laser interferometer 52 is output to the control device CONT. The control device CONT controls the position of the reticle R supported by the reticle stage RST by driving the reticle stage drive unit RSTD based on the measurement result of the laser interferometer 52.

Projection optical system PL projects and exposes the pattern of reticle R onto wafer W at a predetermined projection magnification β. The projection optical system PL is composed of a plurality of optical elements including an optical element provided at the front end portion on the wafer W side. These optical elements are supported by a lens barrel PK. The projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4, 1/5, or 1/8.
The projection optical system PL may be any of a reduction system, a unity magnification system, and an enlargement system. The optical element at the tip of the projection optical system PL is detachably (replaceable) with respect to the lens barrel PK.

  Wafer stage WST moves while supporting wafer W, and includes fine movement table 61, coarse movement table 62, wafer surface plate 63, and the like. The fine movement table 61 holds the wafer W via the wafer holder WH, and the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ with respect to the coarse movement table 62 (or the wafer surface plate 63). Fine driving is possible in the direction of 6 degrees of freedom. The coarse movement table 62 is movable in three degrees of freedom in the Y-axis direction, the X-axis direction, and the θZ direction while supporting the fine movement table 61 (supported substantially in the Z-axis direction). Wafer surface plate 63 supports coarse movement table 62 so as to be movable in the XY plane.

  Wafer stage WST is driven by a wafer stage drive unit WSTD (X-axis linear motor 70, Y-axis linear motor 80, etc., see FIG. 2) such as a linear motor. Wafer stage drive unit WSTD is controlled by control unit CONT. By driving the coarse movement table 62, the position of the wafer W in the XY direction (position in a direction substantially parallel to the image plane of the projection optical system PL) is controlled. Further, by driving the fine movement table 61, the X-axis direction, the Y-axis direction, the Z-axis direction (focus position), the θX direction, the θY direction, and the θZ direction of the wafer W held by the wafer holder WH on the fine movement table 61. The position at is controlled with high accuracy.

  A movable mirror 53 is provided on wafer stage WST (fine movement table 61). A laser interferometer 54 is provided at a position facing the moving mirror 53. The two-dimensional position and rotation angle of wafer W on wafer stage WST are measured in real time by laser interferometer 54, and the measurement result is output to control unit CONT. The control device CONT drives the wafer stage WST via the wafer stage drive unit WSTD based on the measurement result of the laser interferometer 54, so that the X-axis and Y-axis directions of the wafer W supported by the wafer stage WST Positioning in the θZ direction is performed.

  Further, the exposure apparatus EX includes a focus detection system 56 that detects the position (focus position) of the surface of the wafer W with respect to the image plane of the projection optical system PL. As disclosed in, for example, US Pat. No. 6,608,681, the focus detection system measures the position information of the substrate in the Z-axis direction at each of the plurality of measurement points, thereby obtaining the surface position information of the substrate. It is to detect. In the present embodiment, the focus detection system 56 includes a light projecting unit 56A that projects detection light from an oblique direction to the surface of the wafer W, and a light receiving unit 56B that receives detection light (reflected light) reflected from the surface of the wafer W. It has.

  The light reception result of the light receiving unit 56B is output to the control device CONT. The control device CONT drives the wafer stage WST (fine movement table 61) via the wafer stage drive unit WSTD based on the detection result of the focus detection system 56, thereby changing the position of the surface of the wafer W to the focal depth of the projection optical system PL. Fit in. That is, the fine movement table 61 controls the focus position and the tilt angle of the wafer W to adjust the surface of the wafer W to the image plane of the projection optical system PL by the auto focus method and the auto leveling method.

Next, a detailed configuration of wafer stage WST will be described.
FIG. 2 is a perspective view showing the configuration of wafer stage WST.

  Wafer stage WST includes wafer surface plate 63 provided on frame caster FC, wafer stage WST which is disposed above wafer surface plate 63 and moves along upper surface 63A of wafer surface plate 63, and these wafers. A laser interferometer 54 that detects the position of the stage WST, an X-axis linear motor 70 that drives the wafer stage WST, a Y-axis linear motor 80 (see the wafer stage drive unit WSTD in FIG. 1), and the like are provided.

  The frame caster FC is a member formed in a substantially flat plate shape, and is placed on the floor via a vibration removal unit (not shown). On the upper surface of the frame caster FC, a wafer surface plate 63 is levitated and supported by a static gas bearing (not shown) (for example, an air bearing) via a predetermined clearance. Wafer surface plate 63 is levitated because wafer surface plate 63 moves in the opposite direction as a counter mass due to the reaction force generated by movement of wafer stage WST, and this reaction force is canceled by the law of conservation of momentum. Because.

  Upper surface 63A of wafer surface plate 63 is finished with a very high flatness, and serves as a guide surface when wafer stage WST moves along the XY plane.

  Wafer stage WST includes coarse movement table 62 arranged on wafer surface plate 63 and fine movement table 61 mounted on coarse movement table 62 via a six-degree-of-freedom fine movement mechanism (not shown). The 6-degree-of-freedom fine movement mechanism actually includes an actuator 90 that supports the fine movement table 61 at a plurality of locations on the coarse movement table 62 (see FIG. 4). For example, a voice coil motor or the like is preferably used as the actuator 90. By controlling the actuator 90 by the control device CONT, the fine movement table 61 is slightly moved in the six degrees of freedom directions of the X axis direction, the Y axis direction, the Z axis direction, the θX direction, the θY direction, and the θZ direction.

  The coarse motion table 62 is configured by a hollow member having a rectangular cross section and extending in the X-axis direction. A gas static pressure bearing (not shown) (for example, an air bearing) (not shown) is disposed on the lower surface of the coarse motion table 62, and the coarse motion table 62 is supported to float through a predetermined clearance.

  Inside the coarse movement table 62, a magnet unit 72 having a permanent magnet group as a mover in the X-axis direction is provided. An X-axis stator 74 extending in the X-axis direction is inserted into the internal space of the magnet unit 72. The X-axis stator 74 is constituted by an armature unit that includes a plurality of armature coils arranged at predetermined intervals along the X-axis direction. In this case, a moving magnet type X-axis linear motor 70 for driving wafer stage WST in the X-axis direction is constituted by magnet unit 72 and X-axis stator 74 formed of an armature unit. The X-axis linear motor 70 may be a moving coil type linear motor instead of the moving magnet type linear motor.

  Movable elements 82 are respectively fixed to both ends in the longitudinal direction of the X-axis stator 74. The mover 82 is composed of, for example, an armature unit including a plurality of armature coils arranged at predetermined intervals along the Y-axis direction. At both ends of the wafer surface plate 63 in the X direction, Y axis driving stators 84 extending in the Y direction are disposed. The Y-axis stator 84 is configured as a magnetic pole unit including a plurality of permanent magnet groups. Each of the above-described movers 82 is inserted into the Y-axis stator 84 inside. In other words, the moving coil type Y-axis linear motor 80 for driving the wafer stage WST in the Y-axis direction is constituted by the mover 82 made of an electric unit and the Y-axis stator 84 made of a magnetic pole unit. The Y-axis linear motor 80 may be a moving magnet type linear motor instead of the moving coil type linear motor.

  With such a configuration, wafer stage WST is driven in the X-axis direction by X-axis linear motor 70 and driven in the Y-axis direction integrally with X-axis linear motor 70 by a pair of Y-axis linear motors 80. Further, by making a difference in the driving force of the two Y-axis linear motors 80, the X-axis stator 74 can move in the θZ direction. Accordingly, the coarse movement table 62 of the wafer stage WST is also moved. Driven in the θZ direction.

  FIG. 3 is an enlarged perspective view of wafer stage WST, and FIG. 4 is a cross-sectional view showing a schematic configuration of wafer stage WST.

  A wafer holder WH for holding a wafer W having a diameter of 300 mm is provided at substantially the center on the fine movement table 61. In the vicinity of the wafer holder WH, a reference mark member FM (Fiducial Mark) is provided. The reference mark member FM is a light transmissive member, and cross marks, for example, are formed on the upper surface thereof at predetermined intervals.

  The coarse motion table 62 shows the positional relationship between the first sensor 100 for measuring the characteristics (illuminance and illuminance unevenness) of the exposure light EL irradiated through the projection optical system PL, and the reticle R and the wafer W. A part of the second sensor 120 that measures the exposure light EL for measurement is attached.

  The first sensors 100 are an exposure amount sensor 102 that measures the illuminance (light quantity) of the exposure light EL that has passed through the projection optical system PL, a wavefront aberration sensor 104 that measures the wavefront aberration of the projection optical system PL, and the projection optical system. And an illuminance unevenness sensor 106 that measures unevenness (light amount distribution) of the exposure light EL via the PL, and each is provided on the coarse motion table 62 via the adjustment stage 65.

  The first sensors 100 are not limited to a detector having a photodiode or a CCD. The first sensors 100 may include members necessary for various measurements such as a pinhole mirror or a diffraction grating disposed on the light receiving surface. The first sensors 100 are not limited to the exposure amount sensor 102, the wavefront aberration sensor 104, and the illuminance unevenness sensor 106, and may be any device that measures the characteristics of the exposure light EL. Further, the first sensors 100 may measure measurement light other than the exposure light EL.

  The coarse motion table 62 has a plurality of extension portions 62B in a part thereof. The first sensors 100 are arranged above the extension portion 62B via the surface adjustment mechanism 66. As a result, the first sensors 100 (exposure amount sensor 102, wavefront aberration sensor 104, illuminance unevenness sensor 106) are positioned on the side of fine movement table 61.

  As the surface adjustment mechanism 66, for example, three piezoelectric actuators, a cam mechanism, and the like are preferably used. The detection surface (upper surface) of the first sensors 100 can be adjusted in the Z-axis direction, θx direction, and θy direction by controlling the surface adjustment mechanism 66 by the control device CONT.

  The reason why the surface adjustment mechanism 66 is used is to make the detection surface of the first sensors 100 coincide with the imaging surface of the projection optical system PL. That is, the exposure light EL is measured under the same conditions as during the wafer W exposure process.

  As shown in FIGS. 3 and 4, the second sensor 120 includes an incident light guide 122 that receives the exposure light EL, an intermediate light guide 124, an output light guide 126 that emits the exposure light EL, and an output light guide. And a light receiving sensor 128 (see FIG. 1) for receiving the light emitted from 126. Further, like the first sensors 100, the second sensor 120 may measure measurement light other than the exposure light EL.

  The incident light guide unit 122 can receive light traveling in the Z-axis direction, has a configuration in which a plurality of optical lenses L1 and L2 are disposed in a cylindrical member, and is disposed on the side of the fine movement table 61. The output light guide 126 has a configuration in which a reference mark member FM and an optical lens L3 are disposed in a cylindrical member that penetrates the fine movement table 61 in the vertical direction (Z-axis direction). The intermediate light guide unit 124 guides light incident on the incident light guide unit 122 to the output light guide unit 126, and includes an optical fiber or a plurality of optical elements (not shown) disposed in a cylindrical member. Have The intermediate light guide unit 124 is attached to the coarse motion table 62 by a clasp or the like, and has a configuration in which the incident light guide unit 122 is fixedly held at one end thereof. The other end of the intermediate light guide 124 is separated from the outgoing light guide 126 (fine movement table 61). That is, a gap is formed between the outgoing light guide 126 and the intermediate light guide 124. Light is sent from the intermediate light guide unit 124 toward the output light guide unit 126 through the gap. The reason why a gap is provided between the intermediate light guide 124 and the outgoing light guide 126 is that the movement of the fine movement table 61 is not hindered. A bellows or the like formed of a flexible material may be arranged around or near the gap so that dust or unnecessary external light does not enter.

  The light receiving sensor 128 is a sensor that receives light emitted from the output light guide 126 (reference mark member FM) in the Z-axis direction and passed through the projection optical system PL and the reticle R above the reticle R, and is a CCD. It consists of a camera.

  In such a configuration, when the exposure light EL is incident on the incident light guide 122, it is guided to the output light guide 126 via the intermediate light guide 124, and illuminates the reference mark member FM from below. The light that illuminates the reference mark member FM is emitted in the Z-axis direction, and is received by the light receiving sensor 128 via the projection optical system PL and the reticle R.

  In this case, alignment marks (not shown) are formed on the outer periphery of the pattern PA of the reticle R. The light receiving sensor 128 acquires an image including the reference mark formed on the reference mark member FM and the alignment mark formed on the reticle R. By measuring the amount of positional deviation between the reference mark and the alignment mark, the relative position between the reticle R and the fine movement table 61 can be measured. Furthermore, alignment of the reticle R is performed based on the result of this position measurement.

  Note that the exposure light EL that has passed through the reticle R and the projection optical system PL is incident on the output light guide 126, and is received by the light receiving sensor 128 disposed near the wafer stage WST via the intermediate light guide 124 and the incident light guide 122. It may be configured to receive light.

  As described above, in the exposure apparatus EX, in the wafer stage WST having the fine movement table 61 and the coarse movement table 62, most of the first sensors 100 and the second sensor 120 are provided in the coarse movement table 62. These sensors 100 and 120 are conventionally arranged on the upper surface of the fine movement table 61. Therefore, the fine movement table 61 can be reduced in weight and size accordingly. Furthermore, the positioning accuracy of the fine movement table 61 is improved.

The embodiment of the present invention has been described above. However, the operation procedure shown in the above-described embodiment, the various shapes and combinations of the constituent members, and the like are examples, and the process is within the scope not departing from the gist of the present invention. Various changes can be made based on conditions and design requirements.
For example, the present invention includes the following modifications.

  The measurement system is not limited to the one that measures the position information of the mask stage and the substrate stage using an interferometer system. For example, a hybrid system including both an encoder system for detecting a scale (diffraction grating) provided on the upper surface of the substrate stage and an interferometer system is adopted, and the measurement result of the interferometer system is used to calibrate the measurement result of the encoder system. (Calibration) may be performed. Further, the position of the substrate stage may be controlled by switching between the interferometer system and the encoder system or using both.

  In another embodiment, for example, as disclosed in Japanese Patent Application Publication No. 2004-51850 (corresponding US Pat. No. 6,611,316), two mask patterns are formed on a substrate via a projection optical system. It is possible to apply an exposure apparatus that combines and double-exposes one shot area on the substrate almost simultaneously by one scan exposure.

  As a substrate, not only a semiconductor wafer for manufacturing semiconductor devices, but also a glass substrate for display devices, a ceramic wafer for thin film magnetic heads, or an original mask or reticle used in an exposure apparatus (synthetic quartz, silicon wafer). Or a film member etc. are applied. Further, the shape of the substrate is not limited to a circle, and may be other shapes such as a rectangle.

  In another embodiment, the exposure apparatus EX is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-135400 (corresponding international publication 1999/23692) and Japanese Patent Application Laid-Open No. 2000-164504 (corresponding US Pat. No. 6,897,963). As disclosed, a measurement stage that is movable independently of a substrate stage that holds a substrate and that includes a measurement member (for example, a reference member on which a reference mark is formed and / or various photoelectric sensors) is mounted. It is possible to provide.

  In this embodiment, a mask is used to form a pattern. Instead, an electronic mask (also referred to as a variable shaping mask, an active mask, or a pattern generator) that generates a variable pattern can be used. As an electronic mask, for example, a DMD (Deformable Micro-mirror Device or Digital Micro-mirror Device) which is a kind of non-light-emitting image display element (also referred to as Spatial Light Modulator (SLM)) can be used. The DMD has a plurality of reflecting elements (micromirrors) that are driven based on predetermined electronic data, and the plurality of reflecting elements are arranged in a two-dimensional matrix on the surface of the DMD and are driven by element units for exposure. Reflects and deflects light. The angle of the reflecting surface of each reflecting element is adjusted. The operation of the DMD can be controlled by a controller. The control device drives the DMD reflecting element based on electronic data (pattern information) corresponding to the pattern to be formed on the substrate, and patterns the exposure light irradiated by the illumination system with the reflecting element. Using the DMD eliminates the need for mask replacement work and mask alignment on the mask stage when the pattern is changed, compared to exposure using a mask (reticle) on which a pattern is formed. Become. In an exposure apparatus using an electronic mask, the mask stage may not be provided, and the substrate may be simply moved in the X-axis and Y-axis directions by the substrate stage. An exposure apparatus using DMD is disclosed in, for example, Japanese Patent Application Laid-Open Nos. 8-313842, 2004-304135, and US Pat. No. 6,778,257.

  The exposure apparatus EX may be an immersion type exposure apparatus that exposes the wafer W through this liquid while disposing a liquid between the projection optical system PL and the wafer W. The liquid immersion method is disclosed in, for example, International Publication No. 99/49504 pamphlet. As the liquid, water (pure water) may be used, or a material other than water, for example, a fluorinated fluid such as perfluorinated polyether (PFPE) or fluorinated oil, or cedar oil may be used. As the liquid, a liquid having a higher refractive index with respect to exposure light than water, for example, a liquid with a refractive index of about 1.6 to 1.8 may be used.

  The use of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor or an exposure apparatus for liquid crystal that exposes a liquid crystal display element pattern on a square glass plate, but a thin film magnetic head, an image sensor (CCD) It can also be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle or mask.

  As long as it is permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above embodiments and modifications is incorporated herein by reference.

The exposure apparatus EX of the present embodiment is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy.
The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus.
The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 5, the semiconductor device includes a step 201 for designing the function and performance of the device, a step 202 for producing a mask (reticle) based on the design step, and a substrate (wafer, glass plate) as a base material of the device. ), A substrate processing step 204 for exposing the pattern of the reticle R onto the wafer W by the exposure apparatus of the above-described embodiment, a device assembly step (including a dicing process, a bonding process, and a packaging process) 205, and an inspection step 206. And so on.

Claims (10)

A base part;
A first moving member movable relative to the base portion;
A second moving member that holds the object and is movable relative to the first moving member;
A stage device comprising: a measuring device that measures at least a part of the first moving member and measures a characteristic of an energy beam applied to the object. The object is a photosensitive substrate;
The stage apparatus according to claim 1, wherein the measurement device includes at least one of an illuminance sensor that detects illuminance of the energy beam and an illuminance unevenness sensor that measures illuminance unevenness of the energy beam.   The stage apparatus according to claim 2, wherein the measuring device includes a position adjusting device that substantially matches a detection surface for detecting the energy beam with an imaging surface of the energy beam.   The measuring device includes a light receiving unit that receives the energy beam, a light guide unit that transmits the beam received by the light receiving unit, and a sensor unit that receives the beam from the light guide unit, and at least the light guide unit. The stage device according to any one of claims 1 to 3, wherein a portion is installed on the first moving member.   5. The stage according to claim 4, wherein the measurement device further includes a light transmission unit that transmits the energy beam to the sensor unit, and the light transmission unit is installed on the second moving member. apparatus.   The stage device according to any one of claims 1 to 5, wherein the second moving member is movable at least in six degrees of freedom.   7. The apparatus according to claim 1, further comprising a drive device that is partly installed on the first moving member and moves the second moving member relative to the first moving member. The stage apparatus according to one item. An exposure apparatus that forms a predetermined image on a substrate held on a substrate stage,
An exposure apparatus using the stage apparatus according to any one of claims 1 to 7 as the substrate stage. An exposure apparatus for forming an image of a mask pattern held on a mask stage on a substrate held on a substrate stage,
An exposure apparatus using the stage apparatus according to any one of claims 1 to 7 as at least one of the mask stage and the substrate stage.   A device manufacturing method including a lithography process, wherein the exposure apparatus according to claim 8 or 9 is used in the lithography process.

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