TW200807177A - Stage apparatus, exposure apparatus and device manufacturing method - Google Patents

Abstract

A stage apparatus (WST) is provided with a base section (63); a first moving member (62) which can relatively move to the base section (63); a second moving member (61) which holds a subject (W) and can relatively move to the first moving member (62); and measuring apparatuses (100, 200) for measuring characteristics of an energy beam (EL) to be applied on the subject (W). At least a part of the measuring apparatuses (100, 120) is arranged on the first moving member (62).

Description

[Technical Field] The present invention relates to a stage device and an exposure apparatus using the same, and more particularly to a semiconductor element (integrated circuit) and a liquid crystal display element. An exposure device used in a lithography process for electronic components. This case claims priority based on Japanese Patent Application No. 2006-162252 filed on June 12, 2006, and uses its contents.

[Prior Art] A lithography process for manufacturing an electronic component such as a semiconductor element (integrated circuit or the like) or a liquid crystal display device is a projection exposure apparatus. Mainly, the image of the mask (or reticle) is transferred to a photosensitive substrate such as a sensitizer-coated wafer or a glass plate, and the plurality of irradiation areas are replaced by a repeating projection method. That is, the step-and-step and step-and-scan projection exposure device (that is, the scanning stepper (also known as the scanner)), etc. The fineness of a, the productivity, requires a very fast basis, the second dead, and The linear motor of the drive table is increased in volume. The larger the volume of the other ice motor is, the more power consumption and manufacturing cost increase. The car I card φ1 is accompanied by the height of the integrated circuit and the pattern tends to be fine. (resolution), therefore, the exposure light gradually = wave = two optical system numerical aperture (NA) gradually increases. Lead to deep focus; c set the resolution increased, but the opposite adjustment is difficult. Height (focus depth direction 2 adjustment table movement direction = very fast moving table, and high precision, these solutions fortunately the weight of the mobile object platform is light. 5 200807177 Easy to high speed and high precision when reducing the weight of the table Mobile station. In the case of a ceramic substrate having a light weight and a high rigidity, a photosensitive substrate such as a wafer or a glass plate tends to be large, and it is extremely difficult to reduce the weight of the table. [Patent Document 1] Japan JP-A-2004-128308 SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) When transferring a photosensitive substrate such as a wafer or a glass plate via a projection optical system, it is necessary to measure an energy beam (exposure light). The amount of light and the amount of light of the beam are not uniform—etc. Therefore, various sensing benefits and their attached components are mounted on the top of the table. In addition, sensing for confirming the projection light and the positional relationship between the system and the table is also mounted. The presence of the sensing device and the like, and the presence of such sensing H, also contribute to the weight reduction and volume of the table. The object of the present invention is to provide a stage device capable of reducing the weight of the table that holds the substrate and moves, Exposure apparatus and component manufacturing method. (Means for solving the problem) The stage device, the exposure device, and the device manufacturing method of the present invention are those corresponding to the respective drawings shown in the examples. However, the symbols with parentheses attached to the respective elements are merely examples of the elements, and are not intended to limit the elements. The first embodiment of the present invention provides a stage device comprising: 2 seat portions (63) a first moving member (62) movable to the base portion; a first moving member (61) holding the object, and for the first movement = movable, and the measuring device ((10), 12G), It is at least in part and placed on the first moving member, and measures the enthalpy of the energy (EL). | 200807177 When the first embodiment is adopted, the second moving weight reduction can be achieved. The volume is reduced, so that the second movement and the high-precision movement can be realized. The second embodiment of the invention provides an exposure apparatus (Εχ) which is held on the substrate (w) on the substrate stage (WST). A specific image is formed, and the stage device of the first embodiment is used as the substrate stage. In the case of the embodiment of the younger brother, the productivity (flux) of the exposure apparatus can be improved. A third embodiment of the present invention provides a component manufacturing method. A lithography program is included, and the second form of exposure device (EX) is used in the aforementioned lithography program. When this invention is employed, it is possible to efficiently manufacture a high-performance component. . B 70 (Effects of the Invention). . . . using various embodiments of the present invention, since the measuring device is disposed on the first moving member', the weight of the moving member can be reduced or reduced. The second moving member can be moved with high precision and high speed. Therefore, since high-pass quantization of the exposure apparatus is required, it is possible to manufacture a high-performance and inexpensive component. [Embodiment] Hereinafter, embodiments of a stage device, an exposure device, and a device manufacturing method of the present invention will be described with reference to the drawings. The first drawing shows a schematic configuration of an exposure apparatus EX according to an embodiment of the present invention. The exposure apparatus EX sequentially moves the reticle r and the wafer W in one dimension, and transfers the pattern PA formed on the reticle to each irradiation region on the wafer w via the projection optical system pL. A scanning type exposure device that enters and sweeps the direction, that is, a so-called scanning stepper. The exposure apparatus EX includes: an illumination optical system il for illuminating the reticle 200807177 by means of the exposed light EL; a dropped wafer stage RST movable by holding the reticle r; and an exposure of the self-labeling line R The projection optical system PL on the wafer W; the wafer stage WST that can move the wafer W via the wafer holder WH; and the control unit CONT that controls the exposure apparatus EX. In addition, in the following description, the direction parallel to the optical axis AX of the projection optical system PL is referred to as the Z-axis direction, and the direction in which the reticle R and the wafer W are moved in the plane perpendicular to the z-axis direction ( The scanning direction) is the Y-axis direction, and the direction perpendicular to the Z-axis direction and the X-axis direction (non-scanning direction) is referred to as the Y-axis direction. Further, the directions of rotation (tilting) around the x-axis, the x-axis, and the x-axis are taken as θ χ, θ γ, and : ΘΖ directions, respectively. The illumination optical system IL illuminates the reticle R supported by the reticle stage RST with the exposed light EL. The illumination optical system IL includes an optical source for exposing the exposure light EL, an optical integrator that uniformizes the illuminance of the exposed light EL emitted from the exposure light source, and a laser that emits the light EL from the optical integrator. The light condensing lens, the relay lens system, and the illumination region in which the exposed light EL is on the reticle R are set to a slit-shaped variable-view aperture (none of which is shown). The specific illumination area on the reticle R is illuminated by the illumination optical system IL with an exposure light EL of uniform illumination distribution. The exposure light EL emitted from the illumination optical system IL, such as a bright line (g line, h line, i line) of an ultraviolet region emitted from a mercury lamp, and krypton fluoride (KrF) excimer laser light (wavelength 248 nm), etc. Far ultraviolet light (DUV light), or argon fluoride (ArF) excimer laser light (wavelength mnm) and fluorine (F2) laser light (wavelength 157nm) vacuum ultraviolet light (VUV light). 8 200807177 The reticle stage RST holds the reticle R and is movable, and is held by vacuum absorbing the reticle R by the reticle holder RH. The reticle stage RST can be moved two-dimensionally in a plane perpendicular to the optical axis AX of the projection optical system pL, that is, in the χγ plane, and can be slightly rotated in the slanting direction. The reticle stage RST is driven by a reticle stage drive unit RSTD such as a linear motor. The reticle stage drive unit RSTD is controlled by the control unit CONT.

In addition, the detailed structure of the reticle holder RH will be described later. A moving mirror 51 is provided on the reticle stage RST. A laser jammer 52 is provided at a position opposite to the moving mirror 51. The position of the reticle direction R (XY direction) of the reticle R on the reticle stage RST and the rotation angle of the 02 direction (sometimes also including the rotation angle of the ΘΧ and ΘΥ directions) are real-time by the laser jammer 52 Measurement. The measurement result of the laser jammer 52 is output to the control device (2) NT. The control set CGNT drives the reticle stage stage drive unit RSTD based on the measurement result of the laser jammer 52 to control the position of the reticle R supported by the reticle stage RST.

The projection optical system PL projects the reticle R and the pattern onto the wafer Wji at a specific projection magnification p. The projection optical line pL is composed of a plurality of optical elements including an optical element having a mouth and a tip end portion of the day W side.

Composition. The optical element such as 匕 is selected by the lens barrel PK. The projection optical system PL is a reduction system in which the projection magnification β is 1/4, 1/5 or 1/8. Outside: The projection optical system PL can also be a reduction system or a doubling system. The optical element at the top end of the projection optical system PL is also counted to be detachable (replaceable) from the lens barrel PK. ί ί: The stage is supported by the wafer ~ and the mover has: 'mouth, coarse stage 62 and wafer platform 63. The micro-motion stage 61 holds the wafer W by the wafer holder WH via 200807177, and can be in the X-axis direction, the γ-axis direction, the z-axis direction, the θ 方向 direction, and the ΘΥ direction for the coarse movement stage 62 (or the wafer stage 63). A small drive in the direction of 6 degrees of freedom in the ΘΖ direction. The coarse motion stage 62 supports (generally supported in the x-axis direction) the fine movement stage 61, and is movable in three directions of freedom in the x-axis direction, the x-axis direction, and the desired direction. The wafer stage 63 movably supports the coarse movement stage 62 in the χγ plane. The wafer stage WST drives the WSTD by a wafer stage such as a linear motor (X-axis linear motor 7〇, γ-axis linear motor 8〇, etc., The second picture) is to drive. The wafer stage drive unit WSTD is controlled by a control unit CONT. By driving the coarse movement stage 62, the position of the wafer in the XY direction (the position in the direction substantially parallel to the image plane of the projection optical system ′) is controlled. Further, 'by driving the micro-motion stage 61, the high-precision production 2, the wafer held by the wafer holder WH on the fine movement stage 61; △ from the direction, the Y-axis direction, the Z-axis direction (focus position), the θ χ direction , ΘΥ direction and position in θζ direction. + 移动 A moving mirror 53 is provided on the round stage WST (micro-motion stage 61). A laser jammer 54 is provided at a position opposite to the frog mirror 2. The position and rotation angle of the wafer carrier w in the two-dimensional direction are measured by real-time measurement, and the measurement result is output to the control device 杲, and the controller is used to measure the junction of the laser interference device 54 according to the measurement of the laser interference device 54 WSTD. Drive wafer stage WST, h and = square 曰 round wafer WST supported wafer | positioning in the x-axis, γ-axis direction and ΘΖ direction. The wafer W is prepared for the focus detection system 56', and the system is inspected, 糸, and, if the national patent No. 6,608,681, etc., 200807177 shows that the substrate is measured at the plurality of measurement points, respectively; To detect the position information of the surface of the substrate. In the present embodiment, the focus detection system 56 includes a light projecting unit 56A that projects the detection light from the oblique direction on the surface of the wafer w, and a light receiving unit 56B that receives the detection light reflected by the surface of the wafer w ( reflected light). The light receiving result of the light receiving unit 56B is output to the control device c〇NT. The control unit CONT drives the wafer stage|81 (micro-motion stage 61) via the wafer stage driving unit WSTD according to the detection result of the focus detection system 56, and positions the surface of the wafer W within the depth of focus of the projection optical system ΡΕ. . That is, the fine movement stage 61 controls the focus position and the tilt angle of the wafer w, and the surface of the wafer W is incorporated into the image plane of the projection optical system PL by the automatic focus mode and the automatic leveling method. Next, the detailed structure of the wafer stage WST will be described. The first figure shows a perspective view of the structure of the wafer stage WST. The wafer stage WST includes a wafer platform 63 that is attached to a frame casting FC (FCM), and a wafer stage WST that is disposed above the wafer platform 63 and along the upper surface of the wafer platform 63. Eight

And moving; the laser interferometer 54 detects the position of the wafer stage WST; and drives the wafer stage WST to the axis linear motor 7〇, the γ-axis linear motor 80 (refer to the wafer stage in the first figure) Drive portion WSTD) 〇Frame casting K: A member having a substantially flat plate shape and placed on the floor via a vibration removing unit, which is not shown in the drawing. Above the frame attachment FC, a support of the wafer stage 63 is floated by a specific hydrostatic bearing (e.g., a gas bearing) not shown. The wafer platform 63 is lifted up for the opposite side force generated by the movement of the wafer stage WST, and the wafer stage 63 is moved in the opposite direction as the counter object f (_ter _) 200807177, the reaction force is preserved by momentum The law is offset. The upper surface 63A of the wafer platform 63 is processed to have a very high degree. The guiding surface when the wafer stage WST moves along the XY plane is provided with two wafer carriers WST: i: 2 disposed on the wafer platform 63 Referring to the six-degree-of-freedom micro-motion mechanism not shown in the figure, the micro-motion table 6 on the table 62, and the six-degree-of-freedom micro-motion mechanism, on the coarse motion table 62, support the micro-motion table 61 in several places: It is composed of =90 and so on (refer to the fourth figure). The actuator 9 is, for example, a ring motor or the like. The control device C0NT controls the actuation of the crying 9 〇, = the 6WX axis direction, the γ axis direction, and the z axis direction of the moving table: the Θχ direction causes the six degrees of freedom of the universal and ΘΖ directions to make a slight movement. The movable jaw 62 has a rectangular frame shape and is formed by extending the hollow member. A gas static bearing (e.g., a gas bearing) is disposed on the lower surface of the coarse motion stage 62, and is not supported by a hydrostatic bearing (e.g., a gas bearing), and floats to support the coarse motion stage 62. U is provided with a magnet unit 72 inside the coarse motion stage 62, which has a permanent magnet for the internal mover. A mosquito family extending between the magnet units 72 and extending in the X-axis direction is used. The upper stator 74 is constituted by an armature unit that houses a plurality of electric coils arranged at specific intervals in the axial direction. In this case, the car is composed of the magnet unit 72 and the stator Y U for the X-axis including the armature unit, and the movable magnetic type of the wafer stage WST is driven in the x-axis direction: 3 up to 70. Further, the 'X-axis linear motor 70 may be a movable coil type linear motor except for the magnetic flux type. The ends of both sides in the longitudinal direction of the stator 74 for the right P-axis are fixed to the eve 82, respectively. The mover 82 is constructed of an armature unit having a plurality of armature coils disposed at intervals of a specific 12 200807177 along the Y-axis direction. Stator 84 for γ-axis driving extending in the γ direction is disposed at both ends of the wafer stage 63 in the X direction. The stator correction for the x-axis drive is constructed as a magnetic pole unit including a plurality of permanent magnet groups. The above movement is inserted into each inner side of the stator 84 for the boring shaft. The two sub-rotators 82 constitute a movable coil type movable shaft type 80 that drives the wafer stage in the x-axis direction by the moving sub-portion 82 of the pivot unit and the stator 84 for the γ-axis including the magnetic pole unit. Further, the Υ axis linear motor 8 can be a linear motor of a moving magnetic type in addition to a linear motor of a movable coil type. With this configuration, the wafer stage WST is driven in the -X-axis direction by the X-axis linear motor 70, and is coupled to the X-axis linear motor 70 by a pair of γ-axis linear motors 80. Drive in the γ-axis direction. Further, by the difference in the driving force of the two Υ axis linear motors 80, the stator 74 for the X axis moves in the ΘΖ direction, and the coarse movement table 62 of the wafer stage WST is also driven in the ΘΖ direction. The third figure is an enlarged perspective view of the wafer stage WST, and the fourth figure is a sectional view showing a schematic structure of the wafer stage WST. A wafer holder WH holding a wafer W having a diameter of 3 mm is provided in the center of the fine movement stage 61. A reference indicating member FM (Fiducial Mark) is provided in the vicinity of the wafer holder WtI. The reference marking member FM is a light transmissive member, and a cross line mark is formed thereon at a specific interval. Mounted on the coarse motion stage 62 is a first sensor type 1 用于 for measuring characteristics (illuminance and illuminance unevenness) of the exposed light EL irradiated by the projection optical system PL; and second sensing One part of the device 120 measures the light EL of the exposure 13 200807177 in order to determine the positional relationship between the reticle R and the wafer W. The first sensor class 100 includes: an exposure amount sensor 1〇2, which is determined by the ^: optical system! <L exposure light 11 illuminance (in the light}', wave 4 aberration sensing ◎ 刚's measurement projection optical system

The berth image of PL is present; and the illuminance is uneven—the sensor is measuring the unevenness (light amount distribution) of the light EL exposed through the projection optical system PL; each is set on the coarse motion stage via the adjustment stage 65 62 on. Further, the first sensor type 100 is not limited to a detector having a photodiode or a CCD. The first sensor type 1〇〇 may also include a configuration required for various measurements such as pinhole reversal, mirror or diffraction grating, etc., and the sensor class 100 is not limited to Exposure sensor 1〇2, wave secret money detector.! 〇 4 filament unevenness - sensor hall only == light, light EL characteristics can be. In addition, the first sensing. . The pain 100 can also measure the measurement light other than the exposure light EL. A portion of the 3 moving table 62 has a plurality of extensions 62B. At:: Extend the upper part of 62B, through the surface adjustment mechanism, and configure two: "member 100. By this, the first sensor type 1" is formed (exposure sensor 1G2, wavefront aberration sensing) The device 1 () 4, the illuminance non-uniform sensing state 106) is located on the side of the micro-motion table 61. The machine winding mechanism 66 is suitable for use, for example, three fort electric actuators and cam two-structure. The wrong control device C0NT control surface For the adjustment mechanism, the first-sensor type detection surface (above) can be adjusted in the two directions, the ΘΧ direction and the 吖 direction. The surface adjustment mechanism 66 is used to make the heart-measuring surface and projection of the first-sensor type Light (four) unified! > L of the imaging surface - that is, you can

The exposed light E is measured under the same conditions as in the exposure processing of the wafer W. 200807177 The exposure of the second sensor 12G has the following: the first sensor m, the light-emitting portion 122, the intermediate light-guiding portion 124, and the first-sensing two-exposure light. Outside ^·=. The second sensor (10) can also measure the light having a circle that can be incident on the two-axis direction, and == the side of the complex optical lens li, l' and Z = t61. The exit light guiding portion 126 has a L lower 3 = the shell member passing through the micro-motion stage 61 is disposed in the cylindrical member. The member member FM and the optical lens are not provided. The light is introduced and emitted in the guide 槿 Du 2 guide. The light guide H 26, _ is provided with a structure of an optical fiber or a plurality of optical elements (nb). The intermediate light guide (the upper and lower pages of the figure) are fixed at one end and have a structure in which the other light guide portion 122 of the intermediate light guide portion m is mounted by a pressure iron or the like. )go away. That is, a gap is formed between the exit guides. Through the gap, the light guiding portion 126 is emitted from the middle, the second, and the fourth light. In the middle door guide J Shao 124, the first portion 124 between the guide portion 126 and the exit light guide sighs, in order not to hinder the movement of the micro-motion table 61. The vicinity of the bone is arranged by a soft material: Moonwood, etc. Avoid dust or unwanted outside light. The light-receiving sensor 128 receives the sense of the light from the exit guide 4126 (the reference mark member FM) from the shot guide R in the z-axis direction, and the light of the smooth optical system PL and the reticle R. And so on. In this configuration, when the exposure light EL is incident on the incident light guiding portion (2) 15 200807177, the light guiding portion is guided through the intermediate light guiding portion 124 to illuminate the reference indicating member FM. The illumination reference indicating member emits light in the z-axis direction and is received by the light receiving sensor 128 via the projection optical system R. And the wire sheet is now marked on the outer circumference of the pattern PA of the reticle R (not shown). The light-receiving sensor 丨 28 takes the reference mark of the reference mark member m and the image formed on the mark. The alignment of the reticle R can be performed by measuring the difference between the reference mark and the alignment mark by measuring the relative position of the reticle R and the fine movement stage 61 based on the position measurement result. Alternatively, the illuminating light EL passing through the reticle R and the projection may be formed. The incident light guiding unit 126 may be incident on the light guiding unit 126, and the light guiding unit 124 and the incident light guiding unit 122 may be used to receive the light. The detector 128 receives. · Yu Chen. In the vicinity of the % lamp, the exposure device has the fine movement table 61 and the coarse motion, and the second sensor is disposed on the fine movement table 120' to reduce the weight of the fine movement table 6! Therefore, in this section, the positioning accuracy of the micro-motion stage 61 is made to be small. (4) In the case of the invention, the invention can be used as an example. However, the conditions and design requirements of the above-mentioned implementation routines may be used for the present invention. The present invention may also include the following measurement system without limitation. Used; technology. The position of the table and the substrate carrier is 1 to the instrument system, and the illuminator is placed on the stomach. The material is equipped with an encoder system 2 that detects the scale (diffraction grating) set on the reverse port of the 200807177 J: The hybrid system' uses the results of the interferometer system to calibrate the measurement results of the encoder system (Cahbmtum). Alternatively, the interferometer system and the encoder can be switched for use, or both can be used to perform the substrate The position control of the stage, in other embodiments, such as the Japanese special opening 2〇〇4_51985〇工斟

In accordance with the disclosure of U.S. Patent No. 6,611,316, it is possible to apply a pattern of two masks on a substrate by means of an optical system, and i scan exposure ' 'a ^ ^

Exposure device. A. In addition to the semiconductor wafer for semiconductor device manufacturing, the substrate is also suitable for a glass substrate for display elements, a ceramic wafer for a thin magnetic head, or a reticle or a reticle for use in an exposure apparatus. Quartz, silicon wafers, or thin film components. Further, the shape of the substrate may be other shapes such as a rectangle, in addition to a circular shape. In other embodiments, the exposure apparatus EX is disclosed in Japanese Laid-Open Patent Publication No. Hei 11-135400 (corresponding to International Publication No. 1999/23692) and the Japanese Patent Publication No. 2000-164504 (corresponding to U.S. Patent No. 6,897,963). The substrate stage is independently movable, and may include a measurement stage on which a measurement member (such as a reference member on which a reference mark is formed and/or various photodetectors) is mounted. This embodiment uses a photomask for patterning, but in addition to this, an electronic mask (also referred to as a variable-shaping mask, active mask or pattern generator) that produces a variable pattern can be used. The electronic mask can be used, for example, as a non-illuminated image display element (also known as a spatial light modulator:

Spatial Light Modulator (SLM) DMD (Deformable Micro-mirror Device or Digital Micro-Reflection 17 200807177 Digital Micro-mirror Device). The DMD has a plurality of reflective elements (microscopic mirrors) driven by specific electronic data. The complex reflective elements are arranged in a two-dimensional matrix on the surface of the DMD, and are driven by the element units to reflect and deflect the exposed light. Each reflective element adjusts the angle of its reflective surface. The action of the DMD can be controlled by the control device. The control device drives the reflective elements of the DMD according to the electronic data (pattern information) according to the pattern formed on the substrate, and the reflective elements are patterned by the reflective elements. By using the DMD, it is not necessary to replace the mask and the operation of aligning the mask in the light army than when the patterned mask (reticle) is used to change the pattern. In addition, the exposure of the electronic mask can be omitted. It is not necessary to provide a photomask carrier, and it is only necessary to move the substrate in the direction of the x-axis and the x-axis by the substrate stage. Further, the exposure using the DMD is disclosed in Japanese Laid-Open Patent Publication No. Hei 8-313842, Japanese Patent Application Publication No. Hei. No. Hei. The exposure apparatus EX may be a immersion in which the liquid is placed on the projection optical system I&gt;L and the wafer W=, and the exposure of the wafer W is performed by the liquid. m as disclosed in the international: book: liquid f can also use water (pure water), can also use other than water and fluorine-based oils such as gas, or 柏古 L?·_ μ' The exposure light has a refractive index higher than that of water, such as a refractive index of 1.6 to 1.8. The use of the exposure device is cold, -^ is used, and is not limited to semiconductor manufacturing. = exposure = broken two on the lack of ', 瓸, 操德分| < 〇 ^ square is widely used in the manufacture of thin film magnetic 戋Produce the film. 笪D), micro-machine, MEMS, DNA wafer Ge 1 film or reticle-specific exposure device. 200807177 In addition, the disclosures of the entire disclosures of the exposure apparatus and the like, and the disclosures of the US patents and the like cited in the above various embodiments and modifications are incorporated herein by reference. The exposure apparatus EX of the present embodiment is manufactured by assembling various subsystems including the respective constituent elements while maintaining specific mechanical precision, electrical precision, and optical precision. In order to ensure these various precisions, before the assembly, adjustments for optical precision are performed for each optical system, and various mechanical systems are used to achieve mechanical adjustment, and various electrical systems are used. , made for adjustments to achieve electrical accuracy $. The assembly procedure for the exposure apparatus from various subsystems includes mechanical connection of various subsystems, wiring connection of electrical faint roads, and piping connection of pneumatic piping. Before assembling the program from the various subsystems to the exposure apparatus, of course, there are individual assembly procedures for each subsystem. After the assembly procedures of the exposure devices of various subsystems are completed, comprehensive adjustments are made to ensure various precisions of the entire exposure apparatus. In addition, the manufacture of the exposure apparatus must be carried out in a clean room where temperature and cleanliness are managed. As shown in the fifth figure, the semiconductor device is manufactured by performing the following steps: performing the function of the device and performing the performance design step 2〇1; and forming the photomask (reticle) step 202 according to the design step; Step 203 of (wafer, glass plate); substrate processing step 204 of exposing the pattern of the reticle R to the wafer W by the exposure device of the foregoing embodiment; component group step (including: cutting program, Processing procedure for joining private sequence, package program, etc.) 2〇5; and inspection step 2〇6, etc. 0 19 200807177 [Simplified description of the drawings] The first figure shows a schematic configuration diagram of the exposure apparatus of the embodiment. The second figure shows a perspective view of the structure of the wafer stage of the embodiment. The third figure is an enlarged perspective view of the wafer stage of the embodiment. The fourth drawing shows a schematic cross-sectional view of the wafer stage of the embodiment. The fifth figure is a flow chart showing a manufacturing procedure of the micro-component of the embodiment. • [Main component symbol description] 61 Micro-motion table (second moving member) 62+ coarse stack (first moving member) „ 63 Wafer platform (base unit) 67 Surface adjustment mechanism (position adjustment device) 90 Actuator (Drive device) 100 First sensor type (measurement device) 102 Exposure amount sensor m 104 Wavefront aberration sensor® 106 Illumination unevenness-sensor 120 Second sensor (measurement device) 122 Incident Light guide unit (light receiving unit) 124 Intermediate light guide unit (light guide unit) 126 Light guide unit (light-transmitting unit) 128 Light-receiving sensor (sensor unit) EL Exposure light (energy beam) EX Exposure unit PA Pattern 20 200807177 R Marker (mask) W Wafer (object, light-sensitive substrate, substrate) WST wafer stage (stage device, substrate stage)

twenty one

Claims (1)

200807177 X. Patent application scope: 1. A stage device, comprising: a base portion; a first moving member movable to the base portion; a second moving member holding an object, and The first moving member is movable; and the measuring device is provided at least in part of the first moving member, and measures characteristics of an energy beam irradiated to the object. 2. The stage device of claim 1, wherein the measuring device comprises at least one of the following components: an illuminance sensor for detecting an illuminance of the energy beam before detecting, and measuring the energy The illuminance of the beam is not uniform with the illuminance unevenness sensor. 3. The stage device of claim 2, wherein the measuring device includes a position adjusting device that substantially uniformly matches the detecting surface of the energy beam and the imaging surface of the energy beam. 4. The stage device according to any one of claims 1 to 3, wherein the measuring device comprises: a light receiving portion that receives the energy beam; and a light guiding portion that transmits the light beam received by the light receiving portion And a sensor unit that receives the light beam from the light guiding unit; and at least the light guiding unit is disposed on the first moving member. 5. The stage device of claim 4, wherein the measuring device further comprises a light transmitting portion that transmits the energy beam to the sensor portion, the light transmitting portion being disposed on the second moving member . 6. The stage device of any one of claims 1 to 5, wherein the second moving member is movable by at least 6 degrees of freedom. 7. The stage apparatus according to any one of claims 1 to 6, wherein 22 ... υ〇υ / ΐ 77 备 = = 2 f: which is a part of the movement of the first member. Leading the heart-moving member to the first moving position, forming a lit on the substrate held on the substrate stage: using any of the first to seventh items of the patent range No. 1 to 7. Loading platform. For example, the device "forms the pattern image of the photomask held by the mask stage" on the substrate on which the substrate is mounted on the scale; (4) the core is characterized in that the photomask stage and the substrate stage are at least The use of any one of the claims of the scope of the application of the first paragraph, the second part of the manufacturing method, including the lithography process, characterized by: the exposure of the application of the scope of the patent range 8 or 9 in the lithography process twenty three