JPWO2003003445A1 - Underfill sheet material, semiconductor chip underfill method, and semiconductor chip mounting method - Google Patents

Underfill sheet material, semiconductor chip underfill method, and semiconductor chip mounting method Download PDF

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JPWO2003003445A1
JPWO2003003445A1 JP2002531444A JP2002531444A JPWO2003003445A1 JP WO2003003445 A1 JPWO2003003445 A1 JP WO2003003445A1 JP 2002531444 A JP2002531444 A JP 2002531444A JP 2002531444 A JP2002531444 A JP 2002531444A JP WO2003003445 A1 JPWO2003003445 A1 JP WO2003003445A1
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resin layer
wafer
underfill resin
underfill
semiconductor chip
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JP4778667B2 (en
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小林　弘
弘 小林
吉良　秀彦
秀彦 吉良
平沢　克俊
克俊 平沢
小八重　健二
健二 小八重
海沼　則夫
則夫 海沼
山上　高豊
高豊 山上
ます美 片山
ます美 片山
俊二 馬場
俊二 馬場
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Fujitsu Ltd
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Fujitsu Ltd
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Abstract

本発明は、工数を減じ、コストの低減化が図れる、半導体チップのアンダーフィル方法を提供する。本発明に係る半導体チップのアンダーフィル方法では、半導体チップが多数造り込まれたウエハの表面を覆うことのできる大きさの前記アンダーフィル樹脂層の片面側に、該アンダーフィル樹脂層よりも大きく、アンダーフィル樹脂層から剥離可能な剥離シートが積層されたアンダーフィル用シート材の該アンダーフィル樹脂層側と、接着剤が塗布されたダイシングフイルムの該接着剤層側との間に、バンプをアンダーフィル樹脂層側に向けてウエハと、該ウエハを囲むリングフレームとを配置する工程と、前記ウエハとリングフレームとを介在させて、前記ダイシングフイルムと剥離シートとを押圧し、ウエハとリングフレームとを前記ダイシングフレームに接着すると共に、ウエハのバンプを前記アンダーフィル樹脂層に埋没させる押圧工程と、前記剥離シートを剥離する剥離工程とを含むことを特徴としている。The present invention provides an underfill method for a semiconductor chip, which can reduce man-hours and cost. In the method of underfilling a semiconductor chip according to the present invention, on one side of the underfill resin layer having a size capable of covering the surface of a wafer on which a large number of semiconductor chips are built, larger than the underfill resin layer, Under the bump between the underfill resin layer side of the underfill sheet material on which the release sheet that can be peeled off from the underfill resin layer is laminated and the adhesive layer side of the dicing film coated with an adhesive. A step of arranging the wafer and the ring frame surrounding the wafer toward the fill resin layer side, and pressing the dicing film and the release sheet with the wafer and the ring frame interposed therebetween; To the dicing frame and press the wafer bump into the underfill resin layer. And degree, is characterized by including a peeling step of peeling off the release sheet.

Description

技術分野
本発明は、半導体チップに設けられたバンプのバンプ間を埋めるために用いるアンダーフィル用シート材、半導体チップのアンダーフィル方法および半導体チップの実装方法に関する。
背景技術
半導体チップを基板（配線基板、パッケージを含む）に実装する場合、半導体チップにバンプを形成し、このバンプを介して半導体チップを基板にフリップチップ実装する方法がある。
この場合、半導体チップの回路面の保護、バンプの腐植防止、チップと基板との接合強度の向上等のため、チップと基板との間に、絶縁材料からなるアンダーフィル樹脂材を充填するようにしている。
この樹脂材の充填は、一般的には、液状の樹脂材をディスペンサーを用いて、個々の半導体チップ毎に充填するようにしている。しかしながら、この方法では、非常に多くの作業時間を要する。またディスペンサーでは樹脂の供給量が不安定であり、未充填個所が残ったり、逆に樹脂のはみ出しが多くなったりする課題がある。
この課題を解決するものとして、例えば、特開平５−５５２７８号公報に示されるように、ウエハにバンプを形成した状態で、シート状に形成したアンダーフィル樹脂材（樹脂層）をバンプが形成されたウエハ面に押し付け、バンプをアンダーフィル樹脂材に埋没させるようにする方法が知られている。これによれば、ウエハの段階で一括してアンダーフィル樹脂材を供給でき、作業効率の大幅な改善ができる。
上記のようにアンダーフィル樹脂材を供給した後、アンダーフィル樹脂材と共にウエハをダイシングし、アンダーフィル樹脂材付きの個片の半導体チップに分離できる。
このように分離した半導体チップを実装基板に実装し、アンダーフィル樹脂材を熱硬化させればよいのである。
また、特開平８−２８８２９３号公報に示される方法では、ウエハにバンプを形成した段階で、バンプの上部が突出するように、ウエハの上面に樹脂封止膜をスピンコートして形成した後、ウエハを個片の半導体チップに切断、分離するようにしている。
また、特開２０００−２９９３３３号公報に示される方法では、バンプが形成されたウエハ面に封止用樹脂シートを載置し、加熱下で、ウエハと封止用樹脂シートとを貼り合わせ、その後ウエハを個片の半導体チップに切断、分離するようにしている。
さらに、特開２０００−１９５９０１号公報に示される方法では、樹脂層が形成された支持フイルムを樹脂層がウエハ表面と接触するように熱圧着し、次いで樹脂層を光硬化し、支持フイルムを剥離した後、ウエハを個片の半導体チップに切断、分離するようにしている。
しかしながら、例えば、上記特開平５−５５２７８号公報に示される方法では、図２０〜図２２に示す工程によらなければならない。
すなわち、まず、図２０に示すように、剥離シート１０上に形成されたアンダーフィル樹脂層１２を、バンプ１３が形成されたウエハ１４の面に押し付けてアンダーフィル樹脂層１２にバンプ１３を埋没させ、剥離シート１０を剥離して、アンダーフィル樹脂材付きのウエハ１４（図２１）を得る。
このウエハ１４をダイシングするために、公知の、接着剤付きのダイシングフイルム１５上に、ウエハ１４とリングフレーム１６とを固定し（図２２）、リングフレーム１６を介してダイシング装置（図示せず）に装着し、ダイシングフイルム１５を切り込まない状態にウエハ１４をアンダーフィル樹脂層１２と共に個片の半導体チップに切断、分離するのである。
ダイシングフイルム１５は、紫外線を照射することによって、接着剤はその接着力を低下させるので、ダイシングフイルム１５から、個片にした、アンダーフィル樹脂材付きの半導体チップを容易に取り出すことができる。
しかしながら、この工程では、ウエハ１４にアンダーフィル樹脂層１２を押し付けて、アンダーフィル樹脂材付きのウエハ１４を得る工程と、このウエハ１４をダイシングフイルム１５に接着する工程との２段階の別工程が必要となり、工数が増大して、それだけコストの上昇を招くという課題がある。
上記他の３つの従来方法の場合にも、同様に、アンダーフィル樹脂材付きのウエハ１４を得る工程と、このウエハ１４をダイシングフイルム１５に接着する工程との２段階の別工程が必要となるという課題がある。
発明の開示
そこで、本発明は上記課題を解決すべくなされたものであり、その目的とするところは、工数を減じ、コストの低減化が図れる、アンダーフィル用シート材、半導体チップのアンダーフィル方法および半導体チップの実装方法を提供するにある。
本発明に係る半導体チップのアンダーフィル方法では、半導体チップに設けられたバンプ間をアンダーフィル樹脂材で埋める半導体チップのアンダーフィル方法において、半導体チップが多数造り込まれたウエハの表面を覆うことのできる大きさの前記アンダーフィル樹脂層の片面側に、該アンダーフィル樹脂層よりも大きく、アンダーフィル樹脂層から剥離可能な剥離シートが積層されたアンダーフィル用シート材の該アンダーフィル樹脂層側と、接着剤が塗布されたダイシングフイルムの該接着剤層側との間に、バンプをアンダーフィル樹脂層側に向けてウエハと、該ウエハを囲むリングフレームとを配置する工程と、前記ウエハとリングフレームとを介在させて、前記ダイシングフイルムと剥離シートとを押圧し、ウエハとリングフレームとを前記ダイシングフレームに接着すると共に、ウエハのバンプを前記アンダーフィル樹脂層に埋没させる押圧工程と、前記剥離シートを剥離する剥離工程とを含むことを特徴としている。
このように、本発明では、ウエハへのアンダーフィル樹脂層の積層と、ウエハおよびリングフレームのダイシングフイルムへの接着とを同一の工程で行えるので、工数が減じられ、コストの低減化を図ることができる。また、ウエハのハンドリングも容易となる。
発明を実施するための最良の形態
以下本発明の好適な実施例を添付図面に基づいて詳細に説明する。
（第１実施例）
図１は、アンダーフィル用シート材２０を示す。
２１はシート状に形成されたアンダーフィル樹脂層である。このアンダーフィル樹脂層１２の両面に、アンダーフィル樹脂層２１の接着力により、剥離可能な剥離シート２２が積層される。そして、一方の剥離シート２２の外面に、接着剤付きの公知のダイシングフイルム２３がその接着剤により貼付されてアンダーフィル用シート材２０が構成される。
アンダーフィル樹脂層２１は、ウエハの表面を覆うに足りる十分な大きさのものであり、剥離シート２２やダイシングフイルム２３はアンダーフィル樹脂層２１よりも大きなものが用いられる。
アンダーフィル樹脂層２１とダイシングフイルム２３との間に剥離シート２２を介在させるのは、アンダーフィル樹脂層２１とダイシングフイルム２３とが強固に接着して、剥離不能になるのを防止するためである。また、アンダーフィル樹脂層２１の両面がシート材で覆われるので、ゴミ等の異物の付着が防止され、ハンドリングも容易となる。
アンダーフィル樹脂材２１は、熱硬化性樹脂からなる。例えば、エポキシ樹脂にフィラーを６０ｗｔ％程度混入し、硬化剤を添加したものが一例として挙げられる。しかし、これに限定されるものではない。厚さは６０μｍ程度が好適である。
剥離シート２２は、例えば、厚さ３０μｍ程度のポリエチレンテレフタレート（ＰＥＴ）のシートを用いることができる。
ダイシングフイルム２３は、貼付されたウエハを支持できる強度を有するシート材、例えば塩化ビニルシートが使用可能である。このダイシングフイルム２３の表面には、接着剤が塗布されており、この接着剤は紫外線照射によりその接着力が弱いものとなるものが使用される。
上記アンダーフィル用シート材２０を用いて、半導体チップにアンダーフィル樹脂層２１を積層するには次のようにする。
まず、図２に示すように、ダイシングフイルム２３を剥離する。また中間の剥離シート２２を剥離し、かつ除去する。これらの作業は、手作業で行ってもよいが、自動機（図示せず）で行える。
自動機中では、剥離されたダイシングフイルム２３と、アンダーフィル樹脂層２１との間に所要の隙間が維持されるように保持される。
次に、図３に示すように、上記の隙間内に、ウエハ２５がバンプ（金のワイヤバンプ）２６をアンダーフィル樹脂層２１方向に向けてアンダーフィル樹脂層２１上に乗るように、また、リングフレーム２７がウエハ２５を囲むようにして挿入される。このウエハ２５とリングフレーム２７の挿入も自動機で行える。
次に、自動機内に配設されている押圧ローラ２８、２８を走行させ、該押圧ローラ２８、２８により、ダイシングフイルム２３と剥離シート２２を介して、ウエハ２５とアンダーフィル樹脂層２１とを押圧する。
これにより、バンプ２６が、アンダーフィル樹脂層２１内に埋没する状態となる。
金のワイヤバンプの場合には、バンプ２６の先端が尖っているので、先端がアンダーフィル樹脂層２１から突出することもあるが、先端は必ずしもアンダーフィル樹脂層２１から突出しないようにしてもよい。
次いで剥離シート２２を剥離する。
上記のようにして、図４に示すように、アンダーフィル樹脂層２１にバンプ２６が埋没した状態のウエハ２５と、リングフレーム２７とをダイシングフイルム２３に接着した状態のものを準備できる。
しかも、ウエハ２５に、アンダーフィル樹脂層２１にバンプ２６が埋没する状態でアンダーフィル樹脂層２１を積層させる工程と、このウエハ２５およびリングフレーム２７をダイシングフイルム２３上に接着する工程とを同時に行うことができ、作業性が大幅に向上し、作業時間も短縮できて、コストの低減化が図れるのである。
上記のように、リングフレーム２７に保持されたウエハ２５を公知のダイシング装置（図示せず）に装着し、アンダーフィル樹脂層２１と共にウエハ２５を切断して個片の半導体チップ３０（図５）に分離する。なお、ダイシングフイルム２３には、浅く、約３０μｍ程度切り込むだけであり、ダイシングフイルム２３は分離しない。
次に、ダイシングフィルム２３に紫外線を照射する。これにより、接着剤の接着力は弱まる。
ダイシングフイルム２３上から、個片に分離された半導体チップ３０を吸着ノズル（図示せず）により吸着して、基板３１上に位置決めして載せ、加圧、加熱することにより、半導体チップ３０を基板３１上に実装できる（図６、図７）。加熱によって、アンダーフィル樹脂材は熱硬化するが、若干はみ出しが生じる。しかし、アンダーフィル樹脂材の供給量は一定しているので、はみ出し量も一定している。
（第２実施例）
図８〜図１１に第２実施例を示す。
本実施例では、ダイシング工程において、まず．比較的幅広の、例えば４０μｍ幅の第１のブレード（図示せず）によりアンダーフィル樹脂層２１側からウエハ２５の厚みの中途部まで切り込み（図８）、次いで、第１のブレードよりも幅の狭い、例えば２５μｍ幅の第２のブレード（図示せず）により、第１のブレードにより形成された溝内を切り込んで、個片の半導体チップ３０に分離するのである（図９）。このようにすることで、周縁部に段差３２が形成された個片の半導体チップに３０が形成される（図１０）。
この半導体チップ３０を上記と同様の方法で、基板３１に実装する。アンダーフィル樹脂材のはみ出しが生じるが、段差３２が樹脂溜まりとなることから、樹脂材のはみ出しを極力少なくできる（図１１）。
（第３実施例）
図１２〜図１５に第３実施例を示す。
本実施例においては、ダイシング工程において、断面Ｖ字状の切刃を有する第１のブレード（図示せず）によりアンダーフィル樹脂層２１側からウエハ２５の厚みの中途部まで切り込んで断面Ｖ字状の溝を形成し（図１２）、次いで、第１のブレードよりも幅の狭い第２のブレードにより、第１のブレードにより形成されたＶ字状の溝内を切り込んで、個片の半導体チップ３０に分離するのである（図１３）。これにより、周縁部に面取り部３３が形成された半導体チップ３０が形成される（図１４）。
この半導体チップ３０を上記と同様の方法で、基板３１に実装する。アンダーフィル樹脂材のはみ出しが生じるが、面取り部３３が樹脂溜まりとなることから、樹脂材のはみ出しを極力少なくできる（図１５）。
（第４実施例）
図１６は、基板３１への半導体チップ３０の実装時、基板３１を上側に、半導体チップ３０を下側にして実装する実施例を示す。
このように半導体チップ３０を下側にすることで、軟化したアンダーフィル樹脂材は、半導体チップ３０の側面を覆うように下方に垂れ下がるので、外方へのアンダーフィル樹脂材のはみ出しをそれだけ少なくできる。
（第５実施例）
図１７は、樹脂のはみ出しを防止する他の実施例を示す。
本実施例では、基板３１の半導体チップ搭載部の周りに、搭載する半導体チップ３０を囲むようにして、凹溝３４を設けている。この凹溝３４が樹脂溜まりとして機能するので、アンダーフィル樹脂材のはみ出しを少なくできる。凹溝３４は、基板３１の配線パターン（図示せず）には至らないように、表層のソルダーレジスト層に浅く設けるとよい。
（第６実施例）
図１８は、半導体チップ３０の搭載部を凹部３５としたものである。この凹部３５自体が樹脂溜まりとして機能する。
（第７実施例）
図１９は、基板３１に貫通孔３６を設けて樹脂溜まりとした実施例を示す。
発明の効果
以上のように、本発明に係るアンダーフィル用シート材によれば、アンダーフィル樹脂層とダイシングフイルムとの間に剥離シートを介在させているので、アンダーフィル樹脂層とダイシングフイルムとが強固に接着して、剥離不能になるのを防止でき、また、アンダーフィル樹脂層の両面がシート材で覆われるので、ゴミ等の異物の付着が防止され、ハンドリングも容易となる。
また本発明に係る半導体チップのアンダーフィル方法では、ウエハに、アンダーフィル樹脂層にバンプが埋没する状態でアンダーフィル樹脂層を積層させる工程と、このウエハおよびリングフレームをダイシングフイルム上に接着する工程とを同時に行うことができ、作業性が大幅に向上し、作業時間も短縮できて、コストの低減化が図れるのである。
また、半導体チップに段差部や面取り部からなる樹脂溜まりを、あるいは基板側に凹溝や凹部、貫通孔からなる樹脂溜まりを設ければ、基板に半導体チップを実装した際、アンダーフィル樹脂材のはみ出しを極力防止できて好適である。
【図面の簡単な説明】
図１は、ダイシングフイルムを剥離した状態のアンダーフィル用シート材の説明図であり、図２は、アンダーフィル用シート材から、ダイシングフイルムと剥離シートを剥離した状態の説明図であり、図３は、押圧ローラにより、ウエハとアンダーフィル樹脂層とを加圧する工程の説明図であり、図４は、リングフレームにウエハが支持された状態を示す説明図であり、図５は個片に分離された状態の半導体チップの説明図であり、図６は半導体チップを基板に実装する工程の説明図であり、図７は基板に半導体チップが実装された状態を示す説明図であり、図８は幅広の第１のブレードによるダイシング工程を示す説明図であり、図９は幅狭の第２のブレードによるダイシング工程を示す説明図であり、図１０は、個片に分離された半導体チップの説明図であり、図１１は、図１０の半導体チップを基板に実装した状態の説明図であり、図１２は断面Ｖ字状の切刃を有する第１のブレードによるダイシング工程を示す説明図であり、図１３は幅狭の第２のブレードによるダイシング工程を示す説明図であり、図１４は個片に分離された半導体チップの説明図であり、図１５は、図１４の半導体チップを基板に実装した状態の説明図であり、図１６は、基板を上側に、半導体チップを下側に配置して実装した状態を示す説明図であり、図１７は、基板に凹溝を設けて樹脂溜まりとした状態の説明図であり、図１８は、基板に凹部を設けて樹脂溜まりとした状態の説明図であり、図１９は、基板に貫通孔を設けて樹脂溜まりとした状態の説明図であり、図２０〜図２２は従来技術の説明図であり、図２０は、ウエハにアンダーフィル樹脂層を積層する工程の説明図であり、図２１は、アンダーフィル樹脂層が積層された状態のウエハの説明図であり、図２２は、ウエハとリングフレームをダイシングフイルムに接着した状態の説明図である。TECHNICAL FIELD The present invention relates to an underfill sheet material used for filling between bumps of a semiconductor chip, an underfill method for a semiconductor chip, and a method for mounting a semiconductor chip.
BACKGROUND ART When mounting a semiconductor chip on a substrate (including a wiring substrate and a package), there is a method of forming a bump on the semiconductor chip and flip-chip mounting the semiconductor chip on the substrate via the bump.
In this case, an underfill resin material made of an insulating material is filled between the chip and the substrate in order to protect the circuit surface of the semiconductor chip, prevent humming of the bumps, improve the bonding strength between the chip and the substrate, and the like. ing.
The resin material is generally filled with a liquid resin material for each semiconductor chip using a dispenser. However, this method requires a great deal of work time. In addition, in the dispenser, there is a problem that the supply amount of the resin is unstable, an unfilled portion remains, and conversely, the resin protrudes more.
In order to solve this problem, for example, as shown in Japanese Patent Application Laid-Open No. 5-55278, a bump is formed on an underfill resin material (resin layer) formed in a sheet shape in a state where a bump is formed on a wafer. A method is known in which a bump is pressed against a wafer surface that has been buried in an underfill resin material. According to this, the underfill resin material can be supplied collectively at the stage of the wafer, and the working efficiency can be greatly improved.
After the underfill resin material is supplied as described above, the wafer can be diced together with the underfill resin material to be separated into individual semiconductor chips with the underfill resin material.
The semiconductor chip separated in this manner is mounted on a mounting board, and the underfill resin material is cured by heat.
In the method disclosed in Japanese Patent Application Laid-Open No. 8-288293, a resin sealing film is formed on the upper surface of the wafer by spin coating so that the upper portion of the bump protrudes when the bump is formed on the wafer. The wafer is cut and separated into individual semiconductor chips.
In the method disclosed in Japanese Patent Application Laid-Open No. 2000-299333, a sealing resin sheet is placed on a wafer surface on which bumps are formed, and the wafer and the sealing resin sheet are bonded together under heating. The wafer is cut and separated into individual semiconductor chips.
Further, in the method disclosed in Japanese Patent Application Laid-Open No. 2000-195901, a support film on which a resin layer is formed is thermocompression-bonded so that the resin layer comes into contact with the wafer surface, and then the resin layer is light-cured to peel off the support film. After that, the wafer is cut and separated into individual semiconductor chips.
However, for example, in the method disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 5-55278, the steps shown in FIGS.
That is, first, as shown in FIG. 20, the underfill resin layer 12 formed on the release sheet 10 is pressed against the surface of the wafer 14 on which the bumps 13 are formed, so that the bumps 13 are buried in the underfill resin layer 12. Then, the release sheet 10 is peeled off to obtain the wafer 14 with the underfill resin material (FIG. 21).
In order to dice the wafer 14, the wafer 14 and the ring frame 16 are fixed on a known dicing film 15 with an adhesive (FIG. 22), and a dicing device (not shown) is provided via the ring frame 16. The wafer 14 is cut and separated into individual semiconductor chips together with the underfill resin layer 12 without cutting the dicing film 15.
When the dicing film 15 is irradiated with ultraviolet light, the adhesive lowers its adhesive strength, so that the individual semiconductor chips with the underfill resin material can be easily taken out from the dicing film 15.
However, in this step, there are two separate steps of a step of pressing the underfill resin layer 12 against the wafer 14 to obtain the wafer 14 with the underfill resin material and a step of bonding the wafer 14 to the dicing film 15. However, there is a problem that the number of man-hours increases and the cost increases accordingly.
Similarly, in the case of the other three conventional methods, similarly, two separate steps of a step of obtaining a wafer 14 with an underfill resin material and a step of bonding the wafer 14 to a dicing film 15 are required. There is a problem that.
DISCLOSURE OF THE INVENTION Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to reduce the number of processes and reduce the cost, and to provide an underfill sheet material and a semiconductor chip underfill method. And a semiconductor chip mounting method.
In the semiconductor chip underfill method according to the present invention, in the semiconductor chip underfill method in which the space between bumps provided on the semiconductor chip is filled with an underfill resin material, the semiconductor chip underfill method may cover a surface of a wafer on which a large number of semiconductor chips are built. On one side of the underfill resin layer of a possible size, the underfill resin layer side of an underfill sheet material in which a release sheet that is larger than the underfill resin layer and that can be separated from the underfill resin layer is laminated. Disposing a wafer and a ring frame surrounding the wafer, with the bumps facing the underfill resin layer, between the dicing film coated with the adhesive and the adhesive layer side; The dicing film and the release sheet are pressed with the frame interposed therebetween, and the wafer and the ring frame are pressed. Thereby bonding the arm to the dicing frame is characterized by comprising a pressing step of burying the bump of the wafer to the underfill resin layer, and a peeling step of peeling the release sheet.
As described above, according to the present invention, since the lamination of the underfill resin layer on the wafer and the bonding of the wafer and the ring frame to the dicing film can be performed in the same process, the number of steps can be reduced and the cost can be reduced. Can be. Also, the handling of the wafer becomes easy.
BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
(First embodiment)
FIG. 1 shows an underfill sheet material 20.
Reference numeral 21 denotes an underfill resin layer formed in a sheet shape. On both surfaces of the underfill resin layer 12, peelable release sheets 22 are laminated by the adhesive force of the underfill resin layer 21. Then, a known dicing film 23 with an adhesive is attached to the outer surface of one of the release sheets 22 with the adhesive to form the underfill sheet material 20.
The underfill resin layer 21 is large enough to cover the surface of the wafer, and the release sheet 22 and the dicing film 23 are larger than the underfill resin layer 21.
The reason why the release sheet 22 is interposed between the underfill resin layer 21 and the dicing film 23 is to prevent the underfill resin layer 21 and the dicing film 23 from firmly adhering to each other and from becoming unremovable. . Further, since both surfaces of the underfill resin layer 21 are covered with the sheet material, adhesion of foreign substances such as dust is prevented, and handling becomes easy.
The underfill resin material 21 is made of a thermosetting resin. For example, an epoxy resin in which a filler is mixed at about 60 wt% and a curing agent is added is given as an example. However, it is not limited to this. The thickness is preferably about 60 μm.
As the release sheet 22, for example, a polyethylene terephthalate (PET) sheet having a thickness of about 30 μm can be used.
As the dicing film 23, a sheet material having a strength capable of supporting the attached wafer, for example, a vinyl chloride sheet can be used. An adhesive is applied to the surface of the dicing film 23, and the adhesive whose adhesive strength is weakened by ultraviolet irradiation is used.
A method for laminating an underfill resin layer 21 on a semiconductor chip using the underfill sheet material 20 is as follows.
First, as shown in FIG. 2, the dicing film 23 is peeled off. In addition, the intermediate release sheet 22 is released and removed. These operations may be performed manually, but can be performed by an automatic machine (not shown).
In the automatic machine, a required gap is maintained between the peeled dicing film 23 and the underfill resin layer 21.
Next, as shown in FIG. 3, the wafer 25 is placed on the underfill resin layer 21 with the bumps (gold wire bumps) 26 facing the underfill resin layer 21 in the above-mentioned gaps, The frame 27 is inserted so as to surround the wafer 25. The insertion of the wafer 25 and the ring frame 27 can also be performed by an automatic machine.
Next, the pressing rollers 28, 28 provided in the automatic machine are run, and the pressing rollers 28, 28 press the wafer 25 and the underfill resin layer 21 via the dicing film 23 and the release sheet 22. I do.
As a result, the bump 26 is buried in the underfill resin layer 21.
In the case of a gold wire bump, since the tip of the bump 26 is sharp, the tip may project from the underfill resin layer 21. However, the tip may not necessarily project from the underfill resin layer 21.
Next, the release sheet 22 is released.
As described above, as shown in FIG. 4, the wafer 25 in which the bump 26 is buried in the underfill resin layer 21 and the ring frame 27 bonded to the dicing film 23 can be prepared.
Moreover, the step of laminating the underfill resin layer 21 on the wafer 25 while the bumps 26 are buried in the underfill resin layer 21 and the step of bonding the wafer 25 and the ring frame 27 to the dicing film 23 are performed simultaneously. Thus, the workability is greatly improved, the work time can be shortened, and the cost can be reduced.
As described above, the wafer 25 held by the ring frame 27 is mounted on a known dicing device (not shown), and the wafer 25 is cut together with the underfill resin layer 21 to form individual semiconductor chips 30 (FIG. 5). To separate. Note that the dicing film 23 is shallow and is only cut about 30 μm, and the dicing film 23 is not separated.
Next, the dicing film 23 is irradiated with ultraviolet rays. This weakens the adhesive strength of the adhesive.
The semiconductor chips 30 separated into individual pieces are sucked from the dicing film 23 by suction nozzles (not shown), positioned and mounted on the substrate 31, and pressurized and heated, so that the semiconductor chips 30 are mounted on the substrate 31. 31 (FIGS. 6 and 7). By heating, the underfill resin material is thermoset, but slightly protrudes. However, since the supply amount of the underfill resin material is constant, the protrusion amount is also constant.
(Second embodiment)
8 to 11 show a second embodiment.
In this embodiment, in the dicing step, first,. A relatively wide first blade (not shown) having a width of, for example, 40 μm is cut from the underfill resin layer 21 side to an intermediate portion of the thickness of the wafer 25 (FIG. 8). The groove formed by the first blade is cut by a narrow second blade (not shown) having a width of, for example, 25 μm, and separated into individual semiconductor chips 30 (FIG. 9). In this manner, 30 is formed on the individual semiconductor chip in which the step 32 is formed in the peripheral portion (FIG. 10).
The semiconductor chip 30 is mounted on the substrate 31 in the same manner as described above. The underfill resin material protrudes, but since the step 32 becomes a pool of resin, it is possible to minimize the protrusion of the resin material (FIG. 11).
(Third embodiment)
12 to 15 show a third embodiment.
In this embodiment, in the dicing step, a first blade (not shown) having a V-shaped cross-section cutting edge is cut from the underfill resin layer 21 side to an intermediate portion of the thickness of the wafer 25 to form a V-shaped cross section. (FIG. 12), and then cut into the V-shaped groove formed by the first blade with a second blade narrower than the first blade to form individual semiconductor chips. 30 (FIG. 13). As a result, the semiconductor chip 30 having the chamfered portion 33 formed at the periphery is formed (FIG. 14).
The semiconductor chip 30 is mounted on the substrate 31 in the same manner as described above. The underfill resin material protrudes, but since the chamfered portion 33 becomes a pool of resin, it is possible to minimize the protrusion of the resin material (FIG. 15).
(Fourth embodiment)
FIG. 16 shows an embodiment in which the semiconductor chip 30 is mounted on the substrate 31 with the substrate 31 on the upper side and the semiconductor chip 30 on the lower side.
By setting the semiconductor chip 30 on the lower side in this manner, the softened underfill resin material hangs down so as to cover the side surface of the semiconductor chip 30, so that the protrusion of the underfill resin material outward can be reduced accordingly. .
(Fifth embodiment)
FIG. 17 shows another embodiment for preventing the resin from overflowing.
In the present embodiment, a concave groove 34 is provided around the semiconductor chip mounting portion of the substrate 31 so as to surround the semiconductor chip 30 to be mounted. Since the concave groove 34 functions as a resin pool, the protrusion of the underfill resin material can be reduced. The concave groove 34 is preferably provided shallowly in the surface solder resist layer so as not to reach the wiring pattern (not shown) of the substrate 31.
(Sixth embodiment)
FIG. 18 shows a configuration in which the mounting portion of the semiconductor chip 30 is a concave portion 35. The recess 35 itself functions as a resin pool.
(Seventh embodiment)
FIG. 19 shows an embodiment in which a through hole 36 is provided in the substrate 31 to form a resin pool.
As described above, according to the sheet material for underfill according to the present invention, since the release sheet is interposed between the underfill resin layer and the dicing film, the underfill resin layer and the dicing film are separated from each other. It can be firmly adhered to prevent peeling, and since both surfaces of the underfill resin layer are covered with the sheet material, foreign substances such as dust are prevented from adhering and handling becomes easy.
Further, in the method for underfilling a semiconductor chip according to the present invention, a step of laminating an underfill resin layer on a wafer in a state where bumps are buried in the underfill resin layer, and a step of bonding the wafer and a ring frame to a dicing film Can be performed at the same time, workability is greatly improved, work time can be shortened, and cost can be reduced.
In addition, if the semiconductor chip is provided with a resin pool formed of a step portion or a chamfered portion, or a resin pool formed of a concave groove, a concave portion, and a through hole on the substrate side, when the semiconductor chip is mounted on the substrate, an underfill resin material is formed. It is preferable that protrusion can be prevented as much as possible.
[Brief description of the drawings]
FIG. 1 is an explanatory view of the underfill sheet material in a state where the dicing film is peeled off, and FIG. 2 is an explanatory view of a state in which the dicing film and the release sheet are peeled off from the underfill sheet material. FIG. 4 is an explanatory view of a step of pressing a wafer and an underfill resin layer by a pressing roller. FIG. 4 is an explanatory view showing a state in which the wafer is supported on a ring frame. FIG. FIG. 6 is an explanatory view of a step of mounting the semiconductor chip on the substrate, FIG. 7 is an explanatory view showing a state where the semiconductor chip is mounted on the substrate, and FIG. FIG. 9 is an explanatory diagram showing a dicing process using a wide first blade, FIG. 9 is an explanatory diagram showing a dicing process using a narrow second blade, and FIG. 10 is a diagram showing a semiconductor device separated into individual pieces. FIG. 11 is an explanatory view showing a state in which the semiconductor chip of FIG. 10 is mounted on a substrate, and FIG. 12 shows a dicing step using a first blade having a V-shaped cross section. FIG. 13 is an explanatory view showing a dicing step using a narrow second blade, FIG. 14 is an explanatory view of a semiconductor chip separated into individual pieces, and FIG. 15 is a semiconductor chip of FIG. FIG. 16 is an explanatory view showing a state in which the chip is mounted on the substrate, FIG. 16 is an explanatory view showing a state in which the substrate is mounted on the upper side of the substrate and the semiconductor chip is mounted on the lower side, and FIG. FIG. 18 is an explanatory view of a state where a resin pool is provided by providing a concave portion in the substrate, and FIG. 19 is a view illustrating a state where the resin pool is formed by providing a through hole in the substrate. FIG. 20 to FIG. 22 are explanatory diagrams of the prior art. FIG. 20 is an explanatory diagram of a step of laminating an underfill resin layer on a wafer, FIG. 21 is an explanatory diagram of a wafer in which an underfill resin layer is laminated, and FIG. FIG. 4 is an explanatory view of a state in which a ring frame is bonded to a dicing film.

Claims (6)

半導体チップに設けられたバンプ間を埋めるためのアンダーフィル樹脂層が剥離シート上に形成されたアンダーフィル用シート材において、
ウエハの表面を覆うことのできる大きさの前記アンダーフィル樹脂層の両面に、該アンダーフィル樹脂層よりも大きく、アンダーフィル樹脂層から剥離可能な剥離シートが積層され、一方の剥離シートの外面に、前記アンダーフィル樹脂層よりも大きく、接着剤が塗布されたダイシングフイルムが該接着剤により貼付されていることを特徴とするアンダーフィル用シート材。In an underfill sheet material in which an underfill resin layer for filling between bumps provided on a semiconductor chip is formed on a release sheet,
On both surfaces of the underfill resin layer having a size capable of covering the surface of the wafer, a release sheet larger than the underfill resin layer and peelable from the underfill resin layer is laminated, and the outer surface of one of the release sheets is An underfill sheet material, characterized in that a dicing film larger than the underfill resin layer and coated with an adhesive is adhered with the adhesive. 半導体チップに設けられたバンプ間をアンダーフィル樹脂材で埋める半導体チップのアンダーフィル方法において、
半導体チップが多数造り込まれたウエハの表面を覆うことのできる大きさの前記アンダーフィル樹脂層の片面側に、該アンダーフィル樹脂層よりも大きく、アンダーフィル樹脂層から剥離可能な剥離シートが積層されたアンダーフィル用シート材の該アンダーフィル樹脂層側と、接着剤が塗布されたダイシングフイルムの該接着剤層側との間に、バンプをアンダーフィル樹脂層側に向けてウエハと、該ウエハを囲むリングフレームとを配置する工程と、
前記ウエハとリングフレームとを介在させて、前記ダイシングフイルムと剥離シートとを押圧し、ウエハとリングフレームとを前記ダイシングフレームに接着すると共に、ウエハのバンプを前記アンダーフィル樹脂層に埋没させる押圧工程と、
前記剥離シートを剥離する剥離工程とを含むことを特徴とする半導体チップのアンダーフィル方法。In an underfill method for a semiconductor chip, in which a gap between bumps provided on the semiconductor chip is filled with an underfill resin material,
A release sheet that is larger than the underfill resin layer and can be peeled off from the underfill resin layer is laminated on one side of the underfill resin layer having a size capable of covering the surface of a wafer on which a large number of semiconductor chips are built. Between the underfill resin layer side of the applied underfill sheet material and the adhesive layer side of the dicing film coated with an adhesive, a wafer with the bumps facing the underfill resin layer side, and the wafer Placing a ring frame surrounding the
A pressing step of pressing the dicing film and the release sheet with the wafer and the ring frame interposed, bonding the wafer and the ring frame to the dicing frame, and burying the bumps of the wafer in the underfill resin layer. When,
And a peeling step of peeling the release sheet. 半導体チップを基板にフリップチップ接続し、半導体チップと基板との間の隙間に樹脂材をアンダーフィルする半導体チップの実装方法において、
半導体チップが多数造り込まれたウエハの表面を覆うことのできる大きさの前記アンダーフィル樹脂層の片面側に、該アンダーフィル樹脂層よりも大きく、アンダーフィル樹脂層から剥離可能な剥離シートが積層されたアンダーフィル用シート材の該アンダーフィル樹脂層側と、接着剤が塗布されたダイシングフイルムの該接着剤層側との間に、バンプをアンダーフィル樹脂層側に向けてウエハと、該ウエハを囲むリングフレームとを配置する工程と、
前記ウエハとリングフレームとを介在させて、前記ダイシングフイルムと剥離シートとを押圧し、ウエハとリングフレームとを前記ダイシングフレームに接着すると共に、ウエハのバンプを前記アンダーフィル樹脂層に埋没させる押圧工程と、
前記剥離シートを剥離する剥離工程と、
前記ダイシングフイルムに接着されたウエハを、前記リングフレームを介してダイシング装置に装着し、前記アンダーフィル樹脂層と共にウエハをダイシングして、個片の半導体チップに分離するダイシング工程と、
個片に分離された半導体チップを、基板の端子部に位置合わせして接合すると共に、加熱して前記アンダーフィル樹脂層を硬化させる実装工程とを含むことを特徴とする半導体チップの実装方法。In a semiconductor chip mounting method of flip-chip connecting a semiconductor chip to a substrate and underfilling a resin material in a gap between the semiconductor chip and the substrate,
A release sheet that is larger than the underfill resin layer and can be peeled off from the underfill resin layer is laminated on one side of the underfill resin layer having a size capable of covering the surface of a wafer on which a large number of semiconductor chips are built. Between the underfill resin layer side of the applied underfill sheet material and the adhesive layer side of the dicing film coated with an adhesive, a wafer with the bumps facing the underfill resin layer side, and the wafer Placing a ring frame surrounding the
A pressing step of pressing the dicing film and the release sheet with the wafer and the ring frame interposed, bonding the wafer and the ring frame to the dicing frame, and burying the bumps of the wafer in the underfill resin layer. When,
A peeling step of peeling the release sheet,
A dicing step of mounting the wafer bonded to the dicing film on a dicing device via the ring frame, dicing the wafer with the underfill resin layer, and separating the wafer into individual semiconductor chips,
Mounting the semiconductor chip separated into pieces into alignment with a terminal portion of the substrate and bonding the semiconductor chip, and heating to cure the underfill resin layer. 前記ダイシング工程において、第１のブレードにより前記アンダーフィル樹脂層側からウエハの厚みの中途部まで切り込み、次いで、前記第１のブレードよりも幅の狭い第２のブレードにより、前記第１のブレードにより形成された溝内を切り込んで、周縁部に段差が形成された個片の半導体チップに分離することを特徴とする請求項３記載の半導体チップの実装方法。In the dicing step, a first blade cuts from the underfill resin layer side to an intermediate portion of the thickness of the wafer, and then a second blade narrower than the first blade is used to cut the wafer by the first blade. 4. The semiconductor chip mounting method according to claim 3, wherein the formed groove is cut into individual semiconductor chips each having a step formed in a peripheral portion. 前記ダイシング工程において、断面Ｖ字状の切刃を有する第１のブレードにより前記アンダーフィル樹脂層側からウエハの厚みの中途部まで切り込んで断面Ｖ字状の溝を形成し、次いで、前記第１のブレードよりも幅の狭い第２のブレードにより、前記第１のブレードにより形成されたＶ字状の溝内を切り込んで、周縁部に面取り部が形成された個片の半導体チップに分離することを特徴とする請求項３記載の半導体チップの実装方法。In the dicing step, a first blade having a V-shaped cross section is cut from the underfill resin layer side to an intermediate portion of the thickness of the wafer to form a V-shaped groove. Cutting a V-shaped groove formed by the first blade with a second blade having a width smaller than that of the first blade, and separating the semiconductor chip into individual semiconductor chips each having a chamfered portion formed at a peripheral edge thereof. 4. The method for mounting a semiconductor chip according to claim 3, wherein: 前記基板に、流れ出した前記アンダーフィル樹脂部を受け入れる凹状もしくは貫通孔からなる樹脂溜まりを設けた基板を用いることを特徴とする請求項３記載の半導体チップの実装方法。4. The method of mounting a semiconductor chip according to claim 3, wherein a substrate provided with a resin reservoir formed of a concave or through hole for receiving the flowed underfill resin portion is used as the substrate.
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