JPS649683A - Formation of outside inclined mirror of semiconductor laser - Google Patents

Formation of outside inclined mirror of semiconductor laser

Info

Publication number
JPS649683A
JPS649683A JP16569387A JP16569387A JPS649683A JP S649683 A JPS649683 A JP S649683A JP 16569387 A JP16569387 A JP 16569387A JP 16569387 A JP16569387 A JP 16569387A JP S649683 A JPS649683 A JP S649683A
Authority
JP
Japan
Prior art keywords
groove
substrate
fine
resist
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16569387A
Other languages
Japanese (ja)
Other versions
JPH0644664B2 (en
Inventor
Kiyoshi Asakawa
Nobukazu Takado
Tsunao Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16569387A priority Critical patent/JPH0644664B2/en
Publication of JPS649683A publication Critical patent/JPS649683A/en
Publication of JPH0644664B2 publication Critical patent/JPH0644664B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make it possible to form a desired angle of inclination with good reproducibility and with good uniformity by a method wherein a groove processing consists of a fine groove processing for forming a vertical end surface and a fine groove processing, which makes the desired angle of inclination with a substrate for forming an outside inclined end surface, and when two fine grooves cross each other at a bottom part, the region pinched by the two grooves is removed from the substrate. CONSTITUTION:In a resist forming process, a vertical groove 15 is filled with a resist material. Then, a reactive ion beam etching is performed by the same method as a method wherein an etching is performed. At this time, as a substrate 11 is arranged in such a way as to make an angle of 45 deg. to a reactive plasma shower 17, an oblique etching is performed using a resist pattern 16 as a mask to form an inclined groove 18. At this time, the groove 15 and the groove 18 cross each other at a bottom part 19. Accordingly, a part 25 surrounded with both of the fine grooves 15 and 18 is separated from the substrate 11 when the resist mask 16 is removed and such an asymmetrical groove as to have a vertical sidewall 21 and an inclined surface 22 can be obtained.
JP16569387A 1987-07-01 1987-07-01 Semiconductor laser external tilt mirror formation method Expired - Fee Related JPH0644664B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16569387A JPH0644664B2 (en) 1987-07-01 1987-07-01 Semiconductor laser external tilt mirror formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16569387A JPH0644664B2 (en) 1987-07-01 1987-07-01 Semiconductor laser external tilt mirror formation method

Publications (2)

Publication Number Publication Date
JPS649683A true JPS649683A (en) 1989-01-12
JPH0644664B2 JPH0644664B2 (en) 1994-06-08

Family

ID=15817249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16569387A Expired - Fee Related JPH0644664B2 (en) 1987-07-01 1987-07-01 Semiconductor laser external tilt mirror formation method

Country Status (1)

Country Link
JP (1) JPH0644664B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0428390A2 (en) * 1989-11-13 1991-05-22 Sharp Kabushiki Kaisha Manufacturing method of optical diffraction grating element
US5279924A (en) * 1989-04-04 1994-01-18 Sharp Kabushiki Kaisha Manufacturing method of optical diffraction grating element with serrated gratings having uniformly etched grooves
US20100102026A1 (en) * 2008-10-29 2010-04-29 Hyundai Motor Company Method of forming nanostructured surface on polymer electrolyte membrane of membrane electrode assembly for fuel cell
DE102008051625B4 (en) * 2008-10-02 2015-08-13 Erich Kasper Method for producing a component with an optical coupling window
US11119405B2 (en) * 2018-10-12 2021-09-14 Applied Materials, Inc. Techniques for forming angled structures

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279924A (en) * 1989-04-04 1994-01-18 Sharp Kabushiki Kaisha Manufacturing method of optical diffraction grating element with serrated gratings having uniformly etched grooves
EP0428390A2 (en) * 1989-11-13 1991-05-22 Sharp Kabushiki Kaisha Manufacturing method of optical diffraction grating element
DE102008051625B4 (en) * 2008-10-02 2015-08-13 Erich Kasper Method for producing a component with an optical coupling window
US20100102026A1 (en) * 2008-10-29 2010-04-29 Hyundai Motor Company Method of forming nanostructured surface on polymer electrolyte membrane of membrane electrode assembly for fuel cell
US8486280B2 (en) * 2008-10-29 2013-07-16 Hyundai Motor Company Method of forming nanostructured surface on polymer electrolyte membrane of membrane electrode assembly for fuel cell
US11119405B2 (en) * 2018-10-12 2021-09-14 Applied Materials, Inc. Techniques for forming angled structures

Also Published As

Publication number Publication date
JPH0644664B2 (en) 1994-06-08

Similar Documents

Publication Publication Date Title
US4734158A (en) Molecular beam etching system and method
US4456501A (en) Process for dislocation-free slot isolations in device fabrication
US4397711A (en) Crystallographic etching of III-V semiconductor materials
JPS649683A (en) Formation of outside inclined mirror of semiconductor laser
JPH01208834A (en) Etching method
KR19990077120A (en) 3D etching method
JPS57174466A (en) Dry etching method
JPS60153129A (en) Manufacture of semiconductor device
JPS6044825B2 (en) Etching method
JPS58151027A (en) Etching method
JPH06252097A (en) Plasma etching device
JPS6430224A (en) Plasma processing method
JPS5666038A (en) Formation of micro-pattern
JPH0393224A (en) Dry etching
JPS62249420A (en) Apparatus for plasma treatment
JPS56115534A (en) Formation of pattern
US4857138A (en) Silicon trench etch
JP2656745B2 (en) Wafer processing method
JPS6424422A (en) Formation of fine pattern
JPS55146934A (en) Processing of surface shape of group 3-5 compound semiconductor
JPS60216552A (en) Etching method
JPS6247132A (en) Parallel flat plate type dry etching device
JPS5511353A (en) Etching method
JPS6348827A (en) Reactive ion etching process
JPS56115537A (en) Forming method of infinitesimal pattern

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees