JPS649667A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS649667A
JPS649667A JP16442287A JP16442287A JPS649667A JP S649667 A JPS649667 A JP S649667A JP 16442287 A JP16442287 A JP 16442287A JP 16442287 A JP16442287 A JP 16442287A JP S649667 A JPS649667 A JP S649667A
Authority
JP
Japan
Prior art keywords
reference voltage
photodetector
semiconductor device
optical signal
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16442287A
Other languages
Japanese (ja)
Inventor
Yoshio Kasai
Koichi Hanamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16442287A priority Critical patent/JPS649667A/en
Publication of JPS649667A publication Critical patent/JPS649667A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable an optical signal to be used as an input signal externally transmitted to a semiconductor device while abating the effect of external electric noise and enhancing the freedom of design by arbitrary arrangement of photodetector by a method wherein an input part of the semiconductor device is provided with a photodetector. CONSTITUTION:A photodetector 16 is provided on an input part 15 on a silicon substrate 3. Besides, a reference voltage terminal 11 is impressed with a reference voltage V1. A light emitting element 18 is provided on a peripheral device 17 while another reference voltage terminal 12 is impressed with another reference voltage V2 through the other channel different from the channel for the reference voltage V1 to a semiconductor device 14. The light emitting element 18 and the photodetector 16 may be arranged oppositely or an optical signal A may be led to the photodetector 16 by optical fiber, etc. The photodetector 16 receiving the optical signal A converts the optical signal A into electric signal E1 in voltage level corresponding to the light intensity. This voltage level of electric signal E1 is determined conforming to the reference voltage V1 of the reference voltage terminal 11 of semiconductor device 14. Finally the electric signal E1 is inputted to the main circuit 2.
JP16442287A 1987-07-01 1987-07-01 Semiconductor device Pending JPS649667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16442287A JPS649667A (en) 1987-07-01 1987-07-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16442287A JPS649667A (en) 1987-07-01 1987-07-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS649667A true JPS649667A (en) 1989-01-12

Family

ID=15792846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16442287A Pending JPS649667A (en) 1987-07-01 1987-07-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS649667A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713755B1 (en) 1999-09-06 2004-03-30 Seiko Epson Corporation Semiconductor device including a light-receiving element and an optical transfer device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713755B1 (en) 1999-09-06 2004-03-30 Seiko Epson Corporation Semiconductor device including a light-receiving element and an optical transfer device

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