JPS649667A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS649667A JPS649667A JP16442287A JP16442287A JPS649667A JP S649667 A JPS649667 A JP S649667A JP 16442287 A JP16442287 A JP 16442287A JP 16442287 A JP16442287 A JP 16442287A JP S649667 A JPS649667 A JP S649667A
- Authority
- JP
- Japan
- Prior art keywords
- reference voltage
- photodetector
- semiconductor device
- optical signal
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable an optical signal to be used as an input signal externally transmitted to a semiconductor device while abating the effect of external electric noise and enhancing the freedom of design by arbitrary arrangement of photodetector by a method wherein an input part of the semiconductor device is provided with a photodetector. CONSTITUTION:A photodetector 16 is provided on an input part 15 on a silicon substrate 3. Besides, a reference voltage terminal 11 is impressed with a reference voltage V1. A light emitting element 18 is provided on a peripheral device 17 while another reference voltage terminal 12 is impressed with another reference voltage V2 through the other channel different from the channel for the reference voltage V1 to a semiconductor device 14. The light emitting element 18 and the photodetector 16 may be arranged oppositely or an optical signal A may be led to the photodetector 16 by optical fiber, etc. The photodetector 16 receiving the optical signal A converts the optical signal A into electric signal E1 in voltage level corresponding to the light intensity. This voltage level of electric signal E1 is determined conforming to the reference voltage V1 of the reference voltage terminal 11 of semiconductor device 14. Finally the electric signal E1 is inputted to the main circuit 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16442287A JPS649667A (en) | 1987-07-01 | 1987-07-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16442287A JPS649667A (en) | 1987-07-01 | 1987-07-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649667A true JPS649667A (en) | 1989-01-12 |
Family
ID=15792846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16442287A Pending JPS649667A (en) | 1987-07-01 | 1987-07-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649667A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6713755B1 (en) | 1999-09-06 | 2004-03-30 | Seiko Epson Corporation | Semiconductor device including a light-receiving element and an optical transfer device |
-
1987
- 1987-07-01 JP JP16442287A patent/JPS649667A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6713755B1 (en) | 1999-09-06 | 2004-03-30 | Seiko Epson Corporation | Semiconductor device including a light-receiving element and an optical transfer device |
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