JPS649287U - - Google Patents
Info
- Publication number
- JPS649287U JPS649287U JP10364787U JP10364787U JPS649287U JP S649287 U JPS649287 U JP S649287U JP 10364787 U JP10364787 U JP 10364787U JP 10364787 U JP10364787 U JP 10364787U JP S649287 U JPS649287 U JP S649287U
- Authority
- JP
- Japan
- Prior art keywords
- back electrode
- view
- insulating layer
- thin film
- showing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 229920002050 silicone resin Polymers 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
第１図は本考案に係る薄膜ＥＬパネルの一実施
例を示す断面図で、右半分はＸ方向の断面図、左
半分はＹ方向の断面図である。第２図は従来の薄
膜ＥＬパネルの構造例を示す断面図で、右半分は
Ｘ方向の断面図、左半分はＹ方向の断面図、第３
図は薄膜ＥＬパネルでの画素部分を示す部分拡大
平面図、第４図は背面電極での自己回復型絶縁破
壊を示す部分拡大平面図、第５図は背面電極での
伝播型絶縁破壊を示す部分拡大平面図、第６図は
、背面電極のエツジ部分を示す部分拡大平面図、
第７図は背面電極のエツジ部から発生したＳｎウ
イスカーを示す部分拡大平面写真図である。
１４…透光性基板、１５…薄膜ＥＬ素子、１６
…透明電極、１７…第１の絶縁層、１８…発光層
、１９…第２の絶縁層、２０…背面電極、２１…
背面電極の外部とり出し電極、２２…シリケコン
樹脂膜。
FIG. 1 is a sectional view showing an embodiment of a thin film EL panel according to the present invention, with the right half being a sectional view in the X direction and the left half being a sectional view in the Y direction. Figure 2 is a cross-sectional view showing an example of the structure of a conventional thin-film EL panel; the right half is a cross-sectional view in the X direction, the left half is a cross-sectional view in the Y direction, and the third
The figure is a partially enlarged plan view showing the pixel portion of a thin-film EL panel, Figure 4 is a partially enlarged plan view showing self-healing dielectric breakdown at the back electrode, and Figure 5 is a partially enlarged plan view showing propagation type dielectric breakdown at the back electrode. FIG. 6 is a partially enlarged plan view showing the edge portion of the back electrode;
FIG. 7 is a partially enlarged plan view showing Sn whiskers generated from the edge portion of the back electrode. 14... Transparent substrate, 15... Thin film EL element, 16
...Transparent electrode, 17...First insulating layer, 18...Light emitting layer, 19...Second insulating layer, 20...Back electrode, 21...
Externally taken-out electrode of the back electrode, 22...Silicon resin film.
補正 昭６２．１０．２
図面の簡単な説明を次のように補正する。
明細書第１１頁第１０〜１１行の「部分拡大平
面写真図である。」を、「部分拡大平面図である
。」に訂正する。Amendment October 2, 1982 The brief description of the drawing is amended as follows. ``This is a partially enlarged plan view.'' in lines 10 to 11 of page 11 of the specification is corrected to ``This is a partially enlarged plan view.''
Claims (1)
１の絶縁層、発光層、第２の絶縁層及びストライ
プ状の背面電極を順次積層形成してなる薄膜ＥＬ
素子を有する薄膜ＥＬパネルにおいて、 前記背面電極をＳｎで形成するとともに、少な
くともこの背面電極をシリコン樹脂にて覆つたこ
とを特徴とする薄膜ＥＬパネル。[Claims for Utility Model Registration] A thin film EL in which a striped transparent electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a striped back electrode are sequentially laminated on a transparent substrate.
1. A thin film EL panel having an element, characterized in that the back electrode is formed of Sn, and at least the back electrode is covered with a silicone resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10364787U JPS649287U (en) | 1987-07-06 | 1987-07-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10364787U JPS649287U (en) | 1987-07-06 | 1987-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS649287U true JPS649287U (en) | 1989-01-18 |
Family
ID=31334670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10364787U Pending JPS649287U (en) | 1987-07-06 | 1987-07-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649287U (en) |
-
1987
- 1987-07-06 JP JP10364787U patent/JPS649287U/ja active Pending
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