JPS6489483A - Treatment of superconductor thin-film - Google Patents
Treatment of superconductor thin-filmInfo
- Publication number
- JPS6489483A JPS6489483A JP62244272A JP24427287A JPS6489483A JP S6489483 A JPS6489483 A JP S6489483A JP 62244272 A JP62244272 A JP 62244272A JP 24427287 A JP24427287 A JP 24427287A JP S6489483 A JPS6489483 A JP S6489483A
- Authority
- JP
- Japan
- Prior art keywords
- film
- desired pattern
- thin
- superconducting
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 6
- 239000002887 superconductor Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
- H10N60/0688—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To prepare a desired pattern on a surface of a thin film of superconducting material without degrading superconducting characteristics by covering the superconductor thin-film with a protective thin-film composed of materials that resist or shut off water, oxygen or processing chemicals, and by conducting etching to form a desired pattern using a photoresist. CONSTITUTION:A Y-Ba-Cu-O superconducting thin-film (YBa2Cu3O6.8) is stuck by the high-frequency sputtering method on a substrate 11 composed of a single crystal of such as sapphire, MgO, SrTiO3 (or, a circuit of semiconductor memory, etc., or a layer such as a resistance layer). Furthermore, a silicon nitride protective film 13 is stuck by the plasma CVD method at a temperature of 250 deg.C or below. Then, this is covered with a positive photoresist 14 (for example, quinone diazide positive resist). By using this as a mask, the silicon nitride film 13 is dry-etched using a CF4+O2 gas at a room temperature and processed to have a desired pattern, a superconducting thin-film 12 is processed to have a desired pattern by a general chemical etching using, for example, 1% nitric acid, and lastly the resist film is removed, thereby a desired pattern being formed on the substrate 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244272A JPS6489483A (en) | 1987-09-30 | 1987-09-30 | Treatment of superconductor thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244272A JPS6489483A (en) | 1987-09-30 | 1987-09-30 | Treatment of superconductor thin-film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489483A true JPS6489483A (en) | 1989-04-03 |
Family
ID=17116280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62244272A Pending JPS6489483A (en) | 1987-09-30 | 1987-09-30 | Treatment of superconductor thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489483A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274481A (en) * | 1988-04-26 | 1989-11-02 | Dowa Mining Co Ltd | Method of forming circuit pattern of superconducting thin-film |
| JPH01283887A (en) * | 1988-05-11 | 1989-11-15 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for pattern of oxide superconductor |
| JPH0396286A (en) * | 1989-09-08 | 1991-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Formation of patterned oxide superconducting thin film |
| US5041188A (en) * | 1989-03-02 | 1991-08-20 | Santa Barbara Research Center | High temperature superconductor detector fabrication process |
| US5087608A (en) * | 1989-12-28 | 1992-02-11 | Bell Communications Research, Inc. | Environmental protection and patterning of superconducting perovskites |
-
1987
- 1987-09-30 JP JP62244272A patent/JPS6489483A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274481A (en) * | 1988-04-26 | 1989-11-02 | Dowa Mining Co Ltd | Method of forming circuit pattern of superconducting thin-film |
| JPH01283887A (en) * | 1988-05-11 | 1989-11-15 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for pattern of oxide superconductor |
| US5041188A (en) * | 1989-03-02 | 1991-08-20 | Santa Barbara Research Center | High temperature superconductor detector fabrication process |
| JPH0396286A (en) * | 1989-09-08 | 1991-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Formation of patterned oxide superconducting thin film |
| US5087608A (en) * | 1989-12-28 | 1992-02-11 | Bell Communications Research, Inc. | Environmental protection and patterning of superconducting perovskites |
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