JPS6487713A - Laser control equipment - Google Patents

Laser control equipment

Info

Publication number
JPS6487713A
JPS6487713A JP62244472A JP24447287A JPS6487713A JP S6487713 A JPS6487713 A JP S6487713A JP 62244472 A JP62244472 A JP 62244472A JP 24447287 A JP24447287 A JP 24447287A JP S6487713 A JPS6487713 A JP S6487713A
Authority
JP
Japan
Prior art keywords
temp
laser
laser beam
measured
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62244472A
Other languages
Japanese (ja)
Inventor
Teizo Sekiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62244472A priority Critical patent/JPS6487713A/en
Publication of JPS6487713A publication Critical patent/JPS6487713A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To maintain a working point temp. at a working condition temp. by measuring the temp. at the working point of a work projected with a laser beam and comparing the measured temp. with a target temp., then controlling the output of the laser beam so as to equal the working point temp. to the target temp. CONSTITUTION:The work 1 is imposed on a driving table 2 and the laser beam 3 outputted from a laser oscillator 4 is projected via a reflecting mirror 5 and a working lens 7 to the work 1 by which the heat treatment is executed. The temp. at the laser irradiated point where heat is generated by projection of the laser beam 3 is measured by a temp. measuring instrument 8 and the measured temp. is transmitted to central control equipment 10. The central control equipment 10 compares the target temp. from a keyboard 11 and the measured temp. and applies the command signal to operate the oscillator 4 by the prescribed laser output to a laser control section 12. The control section 12 controls the laser oscillator 4 to generate the desired laser beam 3. The stable quality of the heat treatment is thereby assured and the precise heat treatment is executed.
JP62244472A 1987-09-29 1987-09-29 Laser control equipment Pending JPS6487713A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244472A JPS6487713A (en) 1987-09-29 1987-09-29 Laser control equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244472A JPS6487713A (en) 1987-09-29 1987-09-29 Laser control equipment

Publications (1)

Publication Number Publication Date
JPS6487713A true JPS6487713A (en) 1989-03-31

Family

ID=17119166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244472A Pending JPS6487713A (en) 1987-09-29 1987-09-29 Laser control equipment

Country Status (1)

Country Link
JP (1) JPS6487713A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01316416A (en) * 1988-06-17 1989-12-21 Nippon Steel Corp Heat treating method for partial surface by laser beam and apparatus thereof
JPH02280986A (en) * 1989-04-20 1990-11-16 Amada Co Ltd Method and apparatus for laser beam welding processing
JPH04272122A (en) * 1991-02-28 1992-09-28 Nissan Motor Co Ltd Laser-beam machine
JPH05154674A (en) * 1991-11-30 1993-06-22 Fanuc Ltd Laser beam machine
JPH06285661A (en) * 1993-04-06 1994-10-11 Mitsubishi Electric Corp Laser beam machine
JPH07116885A (en) * 1993-10-22 1995-05-09 Mitsubishi Heavy Ind Ltd Method for cutting thick plate with high quality by laser beam
JPH0832226A (en) * 1994-07-21 1996-02-02 Nec Gumma Ltd Method and apparatus for laser reflow
US5837960A (en) * 1995-08-14 1998-11-17 The Regents Of The University Of California Laser production of articles from powders
US6429402B1 (en) 1997-01-24 2002-08-06 The Regents Of The University Of California Controlled laser production of elongated articles from particulates
US7126124B2 (en) 2003-05-19 2006-10-24 Fuji Photo Film Co., Ltd. Marking determining method and marking determining apparatus
WO2011024419A1 (en) * 2009-08-25 2011-03-03 株式会社 東芝 Laser irradiation apparatus and laser machining method
US20110210099A1 (en) * 2010-02-26 2011-09-01 Reis Group Holding Gmbh & Co. Kg Method and arrangement for firm bonding of materials
US20110294403A1 (en) * 2010-05-25 2011-12-01 Denso Corporation Wafer processing method, wafer polishing apparatus, and ingot slicing apparatus
CN104498677A (en) * 2015-01-04 2015-04-08 宁波英飞迈材料科技有限公司 Rapid thermal processing equipment for high-throughput microcells and thermal processing method of rapid thermal processing equipment
JP2019178361A (en) * 2018-03-30 2019-10-17 本田技研工業株式会社 Hardening quality determination method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55103290A (en) * 1979-01-30 1980-08-07 Toshiba Corp Method and apparatus for heating
JPS5798620A (en) * 1980-12-08 1982-06-18 Agency Of Ind Science & Technol Laser working device
JPS5911644A (en) * 1982-07-12 1984-01-21 Hitachi Ltd Manufacture of semiconductor device
JPS5950726A (en) * 1982-09-16 1984-03-23 三菱電機株式会社 Ground-fault phase detector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55103290A (en) * 1979-01-30 1980-08-07 Toshiba Corp Method and apparatus for heating
JPS5798620A (en) * 1980-12-08 1982-06-18 Agency Of Ind Science & Technol Laser working device
JPS5911644A (en) * 1982-07-12 1984-01-21 Hitachi Ltd Manufacture of semiconductor device
JPS5950726A (en) * 1982-09-16 1984-03-23 三菱電機株式会社 Ground-fault phase detector

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01316416A (en) * 1988-06-17 1989-12-21 Nippon Steel Corp Heat treating method for partial surface by laser beam and apparatus thereof
JPH02280986A (en) * 1989-04-20 1990-11-16 Amada Co Ltd Method and apparatus for laser beam welding processing
JPH04272122A (en) * 1991-02-28 1992-09-28 Nissan Motor Co Ltd Laser-beam machine
JPH05154674A (en) * 1991-11-30 1993-06-22 Fanuc Ltd Laser beam machine
JPH06285661A (en) * 1993-04-06 1994-10-11 Mitsubishi Electric Corp Laser beam machine
JPH07116885A (en) * 1993-10-22 1995-05-09 Mitsubishi Heavy Ind Ltd Method for cutting thick plate with high quality by laser beam
JPH0832226A (en) * 1994-07-21 1996-02-02 Nec Gumma Ltd Method and apparatus for laser reflow
US5837960A (en) * 1995-08-14 1998-11-17 The Regents Of The University Of California Laser production of articles from powders
US6429402B1 (en) 1997-01-24 2002-08-06 The Regents Of The University Of California Controlled laser production of elongated articles from particulates
US7126124B2 (en) 2003-05-19 2006-10-24 Fuji Photo Film Co., Ltd. Marking determining method and marking determining apparatus
WO2011024419A1 (en) * 2009-08-25 2011-03-03 株式会社 東芝 Laser irradiation apparatus and laser machining method
US9583225B2 (en) 2009-08-25 2017-02-28 Kabushiki Kaisha Toshiba Laser irradiation apparatus and laser machining method
US20110210099A1 (en) * 2010-02-26 2011-09-01 Reis Group Holding Gmbh & Co. Kg Method and arrangement for firm bonding of materials
US8698039B2 (en) * 2010-02-26 2014-04-15 Reis Group Holding Gmbh & Co. Kg Method and arrangement for firm bonding of materials
US20110294403A1 (en) * 2010-05-25 2011-12-01 Denso Corporation Wafer processing method, wafer polishing apparatus, and ingot slicing apparatus
JP2011249449A (en) * 2010-05-25 2011-12-08 Denso Corp Processing method of wafer, and polishing device and cutting device used for the same
US8758087B2 (en) 2010-05-25 2014-06-24 Denso Corporation Wafer processing method, wafer polishing apparatus, and ingot slicing apparatus
CN104498677A (en) * 2015-01-04 2015-04-08 宁波英飞迈材料科技有限公司 Rapid thermal processing equipment for high-throughput microcells and thermal processing method of rapid thermal processing equipment
JP2019178361A (en) * 2018-03-30 2019-10-17 本田技研工業株式会社 Hardening quality determination method

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