JPS648768B2 - - Google Patents

Info

Publication number

JPS648768B2

JPS648768B2 JP56046762A JP4676281A JPS648768B2 JP S648768 B2 JPS648768 B2 JP S648768B2 JP 56046762 A JP56046762 A JP 56046762A JP 4676281 A JP4676281 A JP 4676281A JP S648768 B2 JPS648768 B2 JP S648768B2

Authority

JP

Japan

Prior art keywords

liquid crystal

state

electrode

circuit

display

Prior art date

1981-03-30

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
• Global Dossier
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• 239000004973 liquid crystal related substance Substances 0.000 claims description 86
• 238000003860 storage Methods 0.000 claims description 10
• 230000035945 sensitivity Effects 0.000 claims description 3
• 238000012546 transfer Methods 0.000 claims description 2
• 239000011159 matrix material Substances 0.000 description 17
• 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 15
• 238000000034 method Methods 0.000 description 15
• 239000000758 substrate Substances 0.000 description 11
• 238000009529 body temperature measurement Methods 0.000 description 10
• 239000004988 Nematic liquid crystal Substances 0.000 description 7
• 239000013543 active substance Substances 0.000 description 6
• 230000008859 change Effects 0.000 description 6
• 238000010586 diagram Methods 0.000 description 6
• 230000007704 transition Effects 0.000 description 6
• 230000008901 benefit Effects 0.000 description 5
• 239000000203 mixture Substances 0.000 description 5
• 230000008569 process Effects 0.000 description 5
• 238000009826 distribution Methods 0.000 description 4
• 230000005283 ground state Effects 0.000 description 4
• 230000007774 longterm Effects 0.000 description 4
• BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
• 230000004044 response Effects 0.000 description 4
• 238000000149 argon plasma sintering Methods 0.000 description 3
• 210000004027 cell Anatomy 0.000 description 3
• 239000013078 crystal Substances 0.000 description 3
• 230000005684 electric field Effects 0.000 description 3
• 230000007613 environmental effect Effects 0.000 description 3
• 230000001965 increasing effect Effects 0.000 description 3
• 125000000217 alkyl group Chemical group 0.000 description 2
• 238000006243 chemical reaction Methods 0.000 description 2
• 210000002858 crystal cell Anatomy 0.000 description 2
• 230000007423 decrease Effects 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 230000006870 function Effects 0.000 description 2
• 229910052751 metal Inorganic materials 0.000 description 2
• 239000002184 metal Substances 0.000 description 2
• 150000002739 metals Chemical class 0.000 description 2
• 229910052697 platinum Inorganic materials 0.000 description 2
• RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
• 230000005678 Seebeck effect Effects 0.000 description 1
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
• 150000001412 amines Chemical class 0.000 description 1
• 230000003321 amplification Effects 0.000 description 1
• 238000013459 approach Methods 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 125000004432 carbon atom Chemical group C* 0.000 description 1
• 239000003795 chemical substances by application Substances 0.000 description 1
• 239000011248 coating agent Substances 0.000 description 1
• 238000000576 coating method Methods 0.000 description 1
• 229910052802 copper Inorganic materials 0.000 description 1
• 239000010949 copper Substances 0.000 description 1
• 230000003247 decreasing effect Effects 0.000 description 1
• 239000004205 dimethyl polysiloxane Substances 0.000 description 1
• 238000010291 electrical method Methods 0.000 description 1
• 239000012776 electronic material Substances 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
• 239000010931 gold Substances 0.000 description 1
• 229910052737 gold Inorganic materials 0.000 description 1
• 230000001939 inductive effect Effects 0.000 description 1
• 238000009434 installation Methods 0.000 description 1
• 230000014759 maintenance of location Effects 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 230000003446 memory effect Effects 0.000 description 1
• 230000006386 memory function Effects 0.000 description 1
• 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
• 238000003199 nucleic acid amplification method Methods 0.000 description 1
• 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
• 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
• -1 polydimethylsiloxane Polymers 0.000 description 1
• 229920001296 polysiloxane Polymers 0.000 description 1
• 238000012827 research and development Methods 0.000 description 1
• 230000002441 reversible effect Effects 0.000 description 1
• 238000005070 sampling Methods 0.000 description 1
• 239000004065 semiconductor Substances 0.000 description 1
• 150000004756 silanes Chemical class 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1
• 239000000126 substance Substances 0.000 description 1
• 238000003786 synthesis reaction Methods 0.000 description 1
• 238000002834 transmittance Methods 0.000 description 1
• 229910052720 vanadium Inorganic materials 0.000 description 1