JPS648590A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS648590A
JPS648590A JP62162308A JP16230887A JPS648590A JP S648590 A JPS648590 A JP S648590A JP 62162308 A JP62162308 A JP 62162308A JP 16230887 A JP16230887 A JP 16230887A JP S648590 A JPS648590 A JP S648590A
Authority
JP
Japan
Prior art keywords
information
chip
memory cell
check
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62162308A
Other languages
Japanese (ja)
Other versions
JP2602506B2 (en
Inventor
Katsutaka Kimura
Kazuyuki Miyazawa
Jun Eto
Katsuhiro Shimohigashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62162308A priority Critical patent/JP2602506B2/en
Publication of JPS648590A publication Critical patent/JPS648590A/en
Application granted granted Critical
Publication of JP2602506B2 publication Critical patent/JP2602506B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To accurately check the characteristics of a chip such as information holding characteristic by establishing a correspondence between external information internal information even for a defect relieving chip. CONSTITUTION:When a defect in relieved inside in the chip, a circuit deciding whether a replaced memory cell MC is connected to the same data line or the data lines in pairs is provided and write information in the memory cell MC is controlled by using the output of the discrimination circuit. For example, even when a word line W1 or W2 is replaced to redundant word line, since the write information is inverted, the information is written so as to be at a high potential in the node of the redundancy memory cell in writing the information to bring the node in the normal cell to a high potential to apply the check of the chip correctly. Since the correspondence between the external information and internal information is taken in the defect relieving chip, the check of the information holding characteristic is conducted correctly.
JP62162308A 1987-07-01 1987-07-01 Semiconductor memory Expired - Lifetime JP2602506B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62162308A JP2602506B2 (en) 1987-07-01 1987-07-01 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62162308A JP2602506B2 (en) 1987-07-01 1987-07-01 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS648590A true JPS648590A (en) 1989-01-12
JP2602506B2 JP2602506B2 (en) 1997-04-23

Family

ID=15752042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62162308A Expired - Lifetime JP2602506B2 (en) 1987-07-01 1987-07-01 Semiconductor memory

Country Status (1)

Country Link
JP (1) JP2602506B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152597A (en) * 1983-02-18 1984-08-31 Nec Corp Memory circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152597A (en) * 1983-02-18 1984-08-31 Nec Corp Memory circuit

Also Published As

Publication number Publication date
JP2602506B2 (en) 1997-04-23

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