JPS6484642A - Semiconductor device equipped with multilayer interconnection structure - Google Patents

Semiconductor device equipped with multilayer interconnection structure

Info

Publication number
JPS6484642A
JPS6484642A JP24222887A JP24222887A JPS6484642A JP S6484642 A JPS6484642 A JP S6484642A JP 24222887 A JP24222887 A JP 24222887A JP 24222887 A JP24222887 A JP 24222887A JP S6484642 A JPS6484642 A JP S6484642A
Authority
JP
Japan
Prior art keywords
hole
pad
gnd
checking
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24222887A
Other languages
Japanese (ja)
Inventor
Tatsuo Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24222887A priority Critical patent/JPS6484642A/en
Publication of JPS6484642A publication Critical patent/JPS6484642A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To determine whether a through-hole contact may be accepted as good or not by a method wherein a checking pattern for measuring through-hole resistance is provided with through-hole resistors connected in series and an end of the pattern is connected to a probing pad for checking and the other end to a GND wiring. CONSTITUTION:In a checking pattern 1 for measuring through-hole resistance, through-hole resistors r1, r2,...rn are connected in series. On the periphery or a semiconductor device of this design, there are a GND wiring 3 and a GND pad 4. An end of the checking pattern I is connected to a probing pad 2 for checking and the other end to the GND pad 4 through the GND wiring 3. A voltage is applied across the probing pad 2 and the GND pad 4 and the current is detected. In this way, the series resistance to be presented by the through-hole resistors r1, r2,...rn may be measured with ease, which enables a decision on the through-hole contact in terms of its acceptability.
JP24222887A 1987-09-26 1987-09-26 Semiconductor device equipped with multilayer interconnection structure Pending JPS6484642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24222887A JPS6484642A (en) 1987-09-26 1987-09-26 Semiconductor device equipped with multilayer interconnection structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24222887A JPS6484642A (en) 1987-09-26 1987-09-26 Semiconductor device equipped with multilayer interconnection structure

Publications (1)

Publication Number Publication Date
JPS6484642A true JPS6484642A (en) 1989-03-29

Family

ID=17086139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24222887A Pending JPS6484642A (en) 1987-09-26 1987-09-26 Semiconductor device equipped with multilayer interconnection structure

Country Status (1)

Country Link
JP (1) JPS6484642A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319307A (en) * 2005-05-11 2006-11-24 Samsung Sdi Co Ltd Semiconductor device and method for manufacturing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114356A (en) * 1980-02-13 1981-09-08 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114356A (en) * 1980-02-13 1981-09-08 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319307A (en) * 2005-05-11 2006-11-24 Samsung Sdi Co Ltd Semiconductor device and method for manufacturing same

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