JPS6484642A - Semiconductor device equipped with multilayer interconnection structure - Google Patents
Semiconductor device equipped with multilayer interconnection structureInfo
- Publication number
- JPS6484642A JPS6484642A JP24222887A JP24222887A JPS6484642A JP S6484642 A JPS6484642 A JP S6484642A JP 24222887 A JP24222887 A JP 24222887A JP 24222887 A JP24222887 A JP 24222887A JP S6484642 A JPS6484642 A JP S6484642A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- pad
- gnd
- checking
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To determine whether a through-hole contact may be accepted as good or not by a method wherein a checking pattern for measuring through-hole resistance is provided with through-hole resistors connected in series and an end of the pattern is connected to a probing pad for checking and the other end to a GND wiring. CONSTITUTION:In a checking pattern 1 for measuring through-hole resistance, through-hole resistors r1, r2,...rn are connected in series. On the periphery or a semiconductor device of this design, there are a GND wiring 3 and a GND pad 4. An end of the checking pattern I is connected to a probing pad 2 for checking and the other end to the GND pad 4 through the GND wiring 3. A voltage is applied across the probing pad 2 and the GND pad 4 and the current is detected. In this way, the series resistance to be presented by the through-hole resistors r1, r2,...rn may be measured with ease, which enables a decision on the through-hole contact in terms of its acceptability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24222887A JPS6484642A (en) | 1987-09-26 | 1987-09-26 | Semiconductor device equipped with multilayer interconnection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24222887A JPS6484642A (en) | 1987-09-26 | 1987-09-26 | Semiconductor device equipped with multilayer interconnection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6484642A true JPS6484642A (en) | 1989-03-29 |
Family
ID=17086139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24222887A Pending JPS6484642A (en) | 1987-09-26 | 1987-09-26 | Semiconductor device equipped with multilayer interconnection structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6484642A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006319307A (en) * | 2005-05-11 | 2006-11-24 | Samsung Sdi Co Ltd | Semiconductor device and method for manufacturing same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114356A (en) * | 1980-02-13 | 1981-09-08 | Nec Corp | Semiconductor device |
-
1987
- 1987-09-26 JP JP24222887A patent/JPS6484642A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114356A (en) * | 1980-02-13 | 1981-09-08 | Nec Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006319307A (en) * | 2005-05-11 | 2006-11-24 | Samsung Sdi Co Ltd | Semiconductor device and method for manufacturing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE373830T1 (en) | MULTI-TIP SENSOR | |
| JPS5661136A (en) | Semiconductor test equipment | |
| DE69004830D1 (en) | Arrangement for determining a quiescent current of an integrated monolithic digital circuit, integrated monolithic digital circuit with such an arrangement and test device with such an arrangement. | |
| DE3065137D1 (en) | Electrical test probe for use in testing circuits on printed circuit boards and the like | |
| SE8601959D0 (en) | METHOD AND APPARATUS FOR TESTING COMMUNICATION SYSTEMS | |
| JPS6450948A (en) | Ion activity measuring sensor, manufacture thereof and sensor attachment circuit therefor | |
| DE68909811D1 (en) | Membrane-based IC test probe with precisely positioned contacts. | |
| GB2217860B (en) | Circuit arrangement for non-contact measurement of the ohmic resistance of thin layers | |
| MY112140A (en) | Jig for measuring the characteristics of a semiconductor, manufacturing method for the same, and usage of the same | |
| JPS6484642A (en) | Semiconductor device equipped with multilayer interconnection structure | |
| HUP9901931A2 (en) | Equipment for electric test of printed circuit boards | |
| ATE157776T1 (en) | TEST DEVICE AND METHOD FOR AN IC SOLDERED ON A BOARD | |
| ATE305614T1 (en) | DEVICE FOR MEASURING MAINS VOLTAGE FOR RAIL VEHICLES | |
| JPS6439743A (en) | Container for integrated circuit | |
| JPS6467931A (en) | Integrated circuit | |
| GB2236193A (en) | Voltage indication apparatus | |
| JPS6421375A (en) | In-circuit testing apparatus | |
| JPS56130937A (en) | Inspecting apparatus for probe card | |
| RU99116839A (en) | METHOD FOR DIAGNOSTIC TEMPERATURE MEASUREMENT CHAINS | |
| GB2268277B (en) | Improvements in or relating to electronic circuit test apparatus | |
| JPS57128938A (en) | Device for measuring characteristic of semiconductor | |
| JPS57159051A (en) | Semiconductor device | |
| JPS5694254A (en) | Wire flaw detector | |
| JPS57201040A (en) | Semiconductor device | |
| JPS52116895A (en) | Wiring order tester |