JPS6482588A - Method of controlling reflectivity of reflective film - Google Patents

Method of controlling reflectivity of reflective film

Info

Publication number
JPS6482588A
JPS6482588A JP24180487A JP24180487A JPS6482588A JP S6482588 A JPS6482588 A JP S6482588A JP 24180487 A JP24180487 A JP 24180487A JP 24180487 A JP24180487 A JP 24180487A JP S6482588 A JPS6482588 A JP S6482588A
Authority
JP
Japan
Prior art keywords
semiconductor laser
change
reflectivity
reflective film
quantum efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24180487A
Other languages
Japanese (ja)
Inventor
Yutaka Nagai
Toshitaka Aoyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24180487A priority Critical patent/JPS6482588A/en
Publication of JPS6482588A publication Critical patent/JPS6482588A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To control precisely the reflectivity of a reflective film of semiconductor laser, by monitoring the laser light output from the end surface of a semiconductor laser not irradiated with a deposition beam, with a monitor, and measuring the change of threshold current or the change of external differential quantum efficiency of the semiconductor laser. CONSTITUTION:Since an end surface reflectivity Rv changes according to the change of thickness and refractive index of a reflective film, the reflectivity can be precisely measured, by monitoring the threshold current and the external differential quantum efficiency, with a photo diode 4. In practice, however, the temperature of a semiconductor laser 3 rises as the result of irradiation of a vapor-deposition beam (a), and the values of threshold current and external differential quantum efficiency change. Therefore a shielding plate 6 with a hole through which the vicinity of outputting part of lased light b1 of the semiconductor laser 3 is irradiated with the vapor-deposition beam (a) is arranged, in the front of the semiconductor laser 3.
JP24180487A 1987-09-24 1987-09-24 Method of controlling reflectivity of reflective film Pending JPS6482588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24180487A JPS6482588A (en) 1987-09-24 1987-09-24 Method of controlling reflectivity of reflective film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24180487A JPS6482588A (en) 1987-09-24 1987-09-24 Method of controlling reflectivity of reflective film

Publications (1)

Publication Number Publication Date
JPS6482588A true JPS6482588A (en) 1989-03-28

Family

ID=17079755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24180487A Pending JPS6482588A (en) 1987-09-24 1987-09-24 Method of controlling reflectivity of reflective film

Country Status (1)

Country Link
JP (1) JPS6482588A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869483B2 (en) * 1998-03-21 2005-03-22 Joachim Sacher Coating process and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869483B2 (en) * 1998-03-21 2005-03-22 Joachim Sacher Coating process and apparatus

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