JPS6481383A - Manufacture of distributed feedback type semiconductor laser - Google Patents

Manufacture of distributed feedback type semiconductor laser

Info

Publication number
JPS6481383A
JPS6481383A JP23931887A JP23931887A JPS6481383A JP S6481383 A JPS6481383 A JP S6481383A JP 23931887 A JP23931887 A JP 23931887A JP 23931887 A JP23931887 A JP 23931887A JP S6481383 A JPS6481383 A JP S6481383A
Authority
JP
Japan
Prior art keywords
edge face
laser
spectrum
type semiconductor
distributed feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23931887A
Other languages
Japanese (ja)
Inventor
Akira Takamori
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23931887A priority Critical patent/JPS6481383A/en
Publication of JPS6481383A publication Critical patent/JPS6481383A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a stable single axis mode oscillation by etching the edge face of a laser by the use of a focused ion beam while measuring the axial mode spectrum of a distributed feedback type semiconductor laser (DFB laser), and controlling the phase of a diffraction grating at the edge face. CONSTITUTION:Ga ions irradiated from an electrode 2 from a Ga liquid metal ion source 1 are focused by a focusing lens 3 to 0.5mum or less of the diameter of a beam, radiated or scanned by a deflecting electrode 4 to an arbitrary position on the upper edge face of a DFB laser 10. The etching region is monitored by a secondary electron detector 5, a secondary electron image monitor 6. The lower edge face of the laser 10 is coated in advance with a reflection preventive film, an optical output is produced by an optical fiber 13, and a longitudinal mode spectrum is observed by a spectrum analyzer 14. The upper edge face is etched until a single axial mode is stably obtained while observing the longitudinal mode spectrum.
JP23931887A 1987-09-24 1987-09-24 Manufacture of distributed feedback type semiconductor laser Pending JPS6481383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23931887A JPS6481383A (en) 1987-09-24 1987-09-24 Manufacture of distributed feedback type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23931887A JPS6481383A (en) 1987-09-24 1987-09-24 Manufacture of distributed feedback type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6481383A true JPS6481383A (en) 1989-03-27

Family

ID=17042932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23931887A Pending JPS6481383A (en) 1987-09-24 1987-09-24 Manufacture of distributed feedback type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6481383A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11167802B2 (en) 2017-07-04 2021-11-09 Honda Motor Co., Ltd. Vehicle pillar structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11167802B2 (en) 2017-07-04 2021-11-09 Honda Motor Co., Ltd. Vehicle pillar structure

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