JPS6481349A - Transistor resistance circuit - Google Patents

Transistor resistance circuit

Info

Publication number
JPS6481349A
JPS6481349A JP23964987A JP23964987A JPS6481349A JP S6481349 A JPS6481349 A JP S6481349A JP 23964987 A JP23964987 A JP 23964987A JP 23964987 A JP23964987 A JP 23964987A JP S6481349 A JPS6481349 A JP S6481349A
Authority
JP
Japan
Prior art keywords
equation
pull
power source
circuit
current flows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23964987A
Other languages
Japanese (ja)
Inventor
Masami Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP23964987A priority Critical patent/JPS6481349A/en
Publication of JPS6481349A publication Critical patent/JPS6481349A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize a pull-down/pull-up circuit in which a constant current flows without depending upon a power source voltage by employing a depletion type MOSFET and commonly connecting and employing a gate electrode and a source electrode. CONSTITUTION:A source electrode is connected to -VSS, a drain electrode is connected to an input terminal 11, and a gate electrode is connected to the -VSS. When a conductance constant is betaN and the threshold voltage of a depletion is -VTDN, a gate and a source are the same potential in a depletion type of an N-type MOSFET 10. Accordingly, it is operated in a saturated range according to an equation 1 of a normal available range, its current I becomes as by an equation 2, and a constant current circuit is obtained without depending upon a power source voltage VDD. When the VDD becomes a threshold voltage or lower in the enhancement type, no current flows, or a current flows in an unsaturated range operation even by an equation 3 in the depletion type. Accordingly, even if the power source voltage is varied in a wide range, a pull-down circuit in which no current alters is obtained.
JP23964987A 1987-09-24 1987-09-24 Transistor resistance circuit Pending JPS6481349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23964987A JPS6481349A (en) 1987-09-24 1987-09-24 Transistor resistance circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23964987A JPS6481349A (en) 1987-09-24 1987-09-24 Transistor resistance circuit

Publications (1)

Publication Number Publication Date
JPS6481349A true JPS6481349A (en) 1989-03-27

Family

ID=17047846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23964987A Pending JPS6481349A (en) 1987-09-24 1987-09-24 Transistor resistance circuit

Country Status (1)

Country Link
JP (1) JPS6481349A (en)

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