JPS6478500A - Test circuit for nonvolatile semiconductor memory element - Google Patents

Test circuit for nonvolatile semiconductor memory element

Info

Publication number
JPS6478500A
JPS6478500A JP62113084A JP11308487A JPS6478500A JP S6478500 A JPS6478500 A JP S6478500A JP 62113084 A JP62113084 A JP 62113084A JP 11308487 A JP11308487 A JP 11308487A JP S6478500 A JPS6478500 A JP S6478500A
Authority
JP
Japan
Prior art keywords
voltage
memory element
threshold voltage
gate
impressed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62113084A
Other languages
Japanese (ja)
Inventor
Seiichiro Asari
Akio Kiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62113084A priority Critical patent/JPS6478500A/en
Publication of JPS6478500A publication Critical patent/JPS6478500A/en
Pending legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To measure the threshold voltage of a memory element by providing a voltage impressing means which impresses a voltage to the gate of the mem ory element when measuring the threshold voltage on the enhancement side, but impresses the voltage to the source and a substrate when measuring the threshold voltage on the depression side. CONSTITUTION:Two test modes for the measurement of the threshold voltage of the memory element 11 are provided; in the mode in which the enhancement side is measured, the voltage is impressed to the gate of the memory 11, but in the depression side measurement mode, the voltage is impressed to the source of the element 11 and the substrate. Even when the threshold voltage of the MNOS type memory element is shifted to the depression side, it is prevented that a voltage to be pinched off is impressed directly to said gate without applying a negative voltage to the gate of the memory element 11. In such a way, the threshold voltage of the memory element can be measured.
JP62113084A 1987-05-08 1987-05-08 Test circuit for nonvolatile semiconductor memory element Pending JPS6478500A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62113084A JPS6478500A (en) 1987-05-08 1987-05-08 Test circuit for nonvolatile semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62113084A JPS6478500A (en) 1987-05-08 1987-05-08 Test circuit for nonvolatile semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS6478500A true JPS6478500A (en) 1989-03-23

Family

ID=14603076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62113084A Pending JPS6478500A (en) 1987-05-08 1987-05-08 Test circuit for nonvolatile semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS6478500A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179537A (en) * 1990-01-19 1993-01-12 Kabushiki Kaisha Toshiba Semiconductor memory device having monitoring function
JP2005149695A (en) * 2003-11-18 2005-06-09 Hynix Semiconductor Inc Method of measuring threshold voltage for nand flash memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179537A (en) * 1990-01-19 1993-01-12 Kabushiki Kaisha Toshiba Semiconductor memory device having monitoring function
JP2005149695A (en) * 2003-11-18 2005-06-09 Hynix Semiconductor Inc Method of measuring threshold voltage for nand flash memory device

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