JPS6478500A - Test circuit for nonvolatile semiconductor memory element - Google Patents
Test circuit for nonvolatile semiconductor memory elementInfo
- Publication number
- JPS6478500A JPS6478500A JP62113084A JP11308487A JPS6478500A JP S6478500 A JPS6478500 A JP S6478500A JP 62113084 A JP62113084 A JP 62113084A JP 11308487 A JP11308487 A JP 11308487A JP S6478500 A JPS6478500 A JP S6478500A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- memory element
- threshold voltage
- gate
- impressed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
PURPOSE:To measure the threshold voltage of a memory element by providing a voltage impressing means which impresses a voltage to the gate of the mem ory element when measuring the threshold voltage on the enhancement side, but impresses the voltage to the source and a substrate when measuring the threshold voltage on the depression side. CONSTITUTION:Two test modes for the measurement of the threshold voltage of the memory element 11 are provided; in the mode in which the enhancement side is measured, the voltage is impressed to the gate of the memory 11, but in the depression side measurement mode, the voltage is impressed to the source of the element 11 and the substrate. Even when the threshold voltage of the MNOS type memory element is shifted to the depression side, it is prevented that a voltage to be pinched off is impressed directly to said gate without applying a negative voltage to the gate of the memory element 11. In such a way, the threshold voltage of the memory element can be measured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62113084A JPS6478500A (en) | 1987-05-08 | 1987-05-08 | Test circuit for nonvolatile semiconductor memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62113084A JPS6478500A (en) | 1987-05-08 | 1987-05-08 | Test circuit for nonvolatile semiconductor memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6478500A true JPS6478500A (en) | 1989-03-23 |
Family
ID=14603076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62113084A Pending JPS6478500A (en) | 1987-05-08 | 1987-05-08 | Test circuit for nonvolatile semiconductor memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6478500A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5179537A (en) * | 1990-01-19 | 1993-01-12 | Kabushiki Kaisha Toshiba | Semiconductor memory device having monitoring function |
JP2005149695A (en) * | 2003-11-18 | 2005-06-09 | Hynix Semiconductor Inc | Method of measuring threshold voltage for nand flash memory device |
-
1987
- 1987-05-08 JP JP62113084A patent/JPS6478500A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5179537A (en) * | 1990-01-19 | 1993-01-12 | Kabushiki Kaisha Toshiba | Semiconductor memory device having monitoring function |
JP2005149695A (en) * | 2003-11-18 | 2005-06-09 | Hynix Semiconductor Inc | Method of measuring threshold voltage for nand flash memory device |
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