JPS6425071A - Method for evaluating static characteristic of semiconductor device - Google Patents
Method for evaluating static characteristic of semiconductor deviceInfo
- Publication number
- JPS6425071A JPS6425071A JP18195887A JP18195887A JPS6425071A JP S6425071 A JPS6425071 A JP S6425071A JP 18195887 A JP18195887 A JP 18195887A JP 18195887 A JP18195887 A JP 18195887A JP S6425071 A JPS6425071 A JP S6425071A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- drain
- source
- current
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To evaluate many characteristics, by applying DC constant voltage between the drain and source of a field-effect type transistor and changing gate bias voltage up to several times pinch-off voltage to measure not only the current between a gate and the source but also the current between the gate and the drain. CONSTITUTION:A drain power source VD is connected between the drain D and source S of a field-effect transistor T through an ammeter A and a gate bias power source VG is connected between a gate G and the source S through the ammeter A to constitute a characteristic measuring circuit. By measuring a drain current-gate bias voltage characteristic and a source current-gate bias voltage characteristic using said measuring circuit, a saturated drain current, mutual conductance and pinch-off voltage can be measured. Further, by successively changing gate bias voltage up to several times the pinch-off voltage, the leak current between the gate and the drain as well as the leak current between the gate and the source can be measured and many characteristics can be evaluated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18195887A JPS6425071A (en) | 1987-07-20 | 1987-07-20 | Method for evaluating static characteristic of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18195887A JPS6425071A (en) | 1987-07-20 | 1987-07-20 | Method for evaluating static characteristic of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425071A true JPS6425071A (en) | 1989-01-27 |
Family
ID=16109846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18195887A Pending JPS6425071A (en) | 1987-07-20 | 1987-07-20 | Method for evaluating static characteristic of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425071A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02208977A (en) * | 1989-02-09 | 1990-08-20 | Nissan Motor Co Ltd | Semiconductor device |
| CN102654556A (en) * | 2011-12-14 | 2012-09-05 | 京东方科技集团股份有限公司 | Method for measuring threshold voltage drift of field-effect tube |
-
1987
- 1987-07-20 JP JP18195887A patent/JPS6425071A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02208977A (en) * | 1989-02-09 | 1990-08-20 | Nissan Motor Co Ltd | Semiconductor device |
| CN102654556A (en) * | 2011-12-14 | 2012-09-05 | 京东方科技集团股份有限公司 | Method for measuring threshold voltage drift of field-effect tube |
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