JPS6477932A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477932A JPS6477932A JP62235526A JP23552687A JPS6477932A JP S6477932 A JPS6477932 A JP S6477932A JP 62235526 A JP62235526 A JP 62235526A JP 23552687 A JP23552687 A JP 23552687A JP S6477932 A JPS6477932 A JP S6477932A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- gate
- effect
- implanted
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To vary aimed conductive characteristics without having an effect on an adjacent element by conducting high-energy ion implantation by using a mask with an opening section narrower than a region to be implanted. CONSTITUTION:An n<+> type S/D region 2, a gate insulating film 3 composed of SiO2 in thickness of 200Angstrom , a poly Si gate 4 and PSG layers 5, 6 in 0.5mum and 0.6mum are formed to a p-type Si substrate 1. An Al wiring is shaped be tween these two layers 5, 6. A mask 7 for selective ion implantation consists of a tungsten film, and 8 is made up of a thick photo-resist similarly, and functions as a patterning mask for the tungsten film 7 in combination. When gate length is brought to 1.0mum and the opening width of the implanting mask to 0.5mum and P<+> is implanted to the opening in dosage of 2X10<12>cm<-2> at 1.5MeV, impurity distribution is brought to concentration in which an effect on Vth can be ignored. When the opening width of the mask is equalized to gate length, ions implanted up to an adjacent gate section 4' are distributed, and have an effect on the gate section 4'.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235526A JPH0821556B2 (en) | 1987-09-18 | 1987-09-18 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235526A JPH0821556B2 (en) | 1987-09-18 | 1987-09-18 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6477932A true JPS6477932A (en) | 1989-03-23 |
JPH0821556B2 JPH0821556B2 (en) | 1996-03-04 |
Family
ID=16987281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62235526A Expired - Lifetime JPH0821556B2 (en) | 1987-09-18 | 1987-09-18 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0821556B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012064876A (en) * | 2010-09-17 | 2012-03-29 | Lapis Semiconductor Co Ltd | Method for manufacturing semiconductor device |
-
1987
- 1987-09-18 JP JP62235526A patent/JPH0821556B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012064876A (en) * | 2010-09-17 | 2012-03-29 | Lapis Semiconductor Co Ltd | Method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0821556B2 (en) | 1996-03-04 |
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