JPS6477932A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6477932A
JPS6477932A JP62235526A JP23552687A JPS6477932A JP S6477932 A JPS6477932 A JP S6477932A JP 62235526 A JP62235526 A JP 62235526A JP 23552687 A JP23552687 A JP 23552687A JP S6477932 A JPS6477932 A JP S6477932A
Authority
JP
Japan
Prior art keywords
mask
gate
effect
implanted
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62235526A
Other languages
Japanese (ja)
Other versions
JPH0821556B2 (en
Inventor
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62235526A priority Critical patent/JPH0821556B2/en
Publication of JPS6477932A publication Critical patent/JPS6477932A/en
Publication of JPH0821556B2 publication Critical patent/JPH0821556B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To vary aimed conductive characteristics without having an effect on an adjacent element by conducting high-energy ion implantation by using a mask with an opening section narrower than a region to be implanted. CONSTITUTION:An n<+> type S/D region 2, a gate insulating film 3 composed of SiO2 in thickness of 200Angstrom , a poly Si gate 4 and PSG layers 5, 6 in 0.5mum and 0.6mum are formed to a p-type Si substrate 1. An Al wiring is shaped be tween these two layers 5, 6. A mask 7 for selective ion implantation consists of a tungsten film, and 8 is made up of a thick photo-resist similarly, and functions as a patterning mask for the tungsten film 7 in combination. When gate length is brought to 1.0mum and the opening width of the implanting mask to 0.5mum and P<+> is implanted to the opening in dosage of 2X10<12>cm<-2> at 1.5MeV, impurity distribution is brought to concentration in which an effect on Vth can be ignored. When the opening width of the mask is equalized to gate length, ions implanted up to an adjacent gate section 4' are distributed, and have an effect on the gate section 4'.
JP62235526A 1987-09-18 1987-09-18 Method for manufacturing semiconductor device Expired - Lifetime JPH0821556B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235526A JPH0821556B2 (en) 1987-09-18 1987-09-18 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235526A JPH0821556B2 (en) 1987-09-18 1987-09-18 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6477932A true JPS6477932A (en) 1989-03-23
JPH0821556B2 JPH0821556B2 (en) 1996-03-04

Family

ID=16987281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235526A Expired - Lifetime JPH0821556B2 (en) 1987-09-18 1987-09-18 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0821556B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064876A (en) * 2010-09-17 2012-03-29 Lapis Semiconductor Co Ltd Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064876A (en) * 2010-09-17 2012-03-29 Lapis Semiconductor Co Ltd Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0821556B2 (en) 1996-03-04

Similar Documents

Publication Publication Date Title
KR920010192B1 (en) Semiconductor device
JPS56155572A (en) Insulated gate field effect type semiconductor device
JP2000183348A (en) Mos gate power device
IE813007L (en) Manufacturing a semiconductor device
KR960015811A (en) Active region implantation method using phosphorus to improve short channel performance of surface channel PMOS device
JPS5587483A (en) Mis type semiconductor device
JPS6477932A (en) Manufacture of semiconductor device
JPS57107066A (en) Complementary semiconductor device and manufacture thereof
JPS5771164A (en) Semiconductor device
JPS5478673A (en) Manufacture of complementary insulator gate field effect transistor
JPS57107068A (en) Complementary mis semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS6428961A (en) Field-effect semiconductor device and manufacture thereof
JPS6481355A (en) Manufacture of semiconductor device
JPS5737877A (en) Semiconductor device
JPS5494886A (en) High dielectric strength field effect semiconductor device
JPS564281A (en) Insulated gate type field effect transistor
JPS5580361A (en) Production of vertical junction gate type field effect transistor
JPS54104785A (en) P-wel and its forming method
JPH0521788A (en) Mos transistor and its manufacture
JPS561572A (en) Manufacture of semiconductor device
JPS55113324A (en) Manufacture of semiconductor device
JPS57106160A (en) Semiconductor integrated circuit device and manufacture thereof
JPS56112742A (en) Manufacture of semiconductor device