JPS6476727A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6476727A
JPS6476727A JP23431787A JP23431787A JPS6476727A JP S6476727 A JPS6476727 A JP S6476727A JP 23431787 A JP23431787 A JP 23431787A JP 23431787 A JP23431787 A JP 23431787A JP S6476727 A JPS6476727 A JP S6476727A
Authority
JP
Japan
Prior art keywords
gas
lamp heating
bpsg
bpsg film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23431787A
Other languages
English (en)
Inventor
Yasuro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23431787A priority Critical patent/JPS6476727A/ja
Publication of JPS6476727A publication Critical patent/JPS6476727A/ja
Pending legal-status Critical Current

Links

JP23431787A 1987-09-17 1987-09-17 Manufacture of semiconductor device Pending JPS6476727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23431787A JPS6476727A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23431787A JPS6476727A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6476727A true JPS6476727A (en) 1989-03-22

Family

ID=16969115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23431787A Pending JPS6476727A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6476727A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0373531A (ja) * 1989-08-14 1991-03-28 Nec Corp 多層配線構造を有する半導体装置の製造方法
JPH03120825A (ja) * 1989-09-28 1991-05-23 Applied Materials Inc 半導体ウェーハ上のホウ素リンケイ酸ガラス複合層の形成方法
JPH03157928A (ja) * 1989-11-15 1991-07-05 Mitsubishi Electric Corp 薄膜形成装置
WO1991011023A1 (fr) * 1990-01-18 1991-07-25 Kabushiki Kaisha Toshiba Procede de production de dispositifs semi-conducteurs
JPH03214627A (ja) * 1990-01-18 1991-09-19 Mitsubishi Electric Corp 半導体装置の製造方法
US5656556A (en) * 1996-07-22 1997-08-12 Vanguard International Semiconductor Method for fabricating planarized borophosphosilicate glass films having low anneal temperatures
US5716890A (en) * 1996-10-18 1998-02-10 Vanguard International Semiconductor Corporation Structure and method for fabricating an interlayer insulating film
WO1999017358A1 (en) * 1997-09-30 1999-04-08 Infineon Technologies Ag Improved gapfill of semiconductor structure using doped silicate glasses with multi-step deposition/anneal process
JP2006041307A (ja) * 2004-07-29 2006-02-09 Fuji Electric Holdings Co Ltd 絶縁ゲート型電界効果トランジスタの製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0373531A (ja) * 1989-08-14 1991-03-28 Nec Corp 多層配線構造を有する半導体装置の製造方法
JPH03120825A (ja) * 1989-09-28 1991-05-23 Applied Materials Inc 半導体ウェーハ上のホウ素リンケイ酸ガラス複合層の形成方法
JPH03157928A (ja) * 1989-11-15 1991-07-05 Mitsubishi Electric Corp 薄膜形成装置
WO1991011023A1 (fr) * 1990-01-18 1991-07-25 Kabushiki Kaisha Toshiba Procede de production de dispositifs semi-conducteurs
JPH03214627A (ja) * 1990-01-18 1991-09-19 Mitsubishi Electric Corp 半導体装置の製造方法
US5656556A (en) * 1996-07-22 1997-08-12 Vanguard International Semiconductor Method for fabricating planarized borophosphosilicate glass films having low anneal temperatures
US5716890A (en) * 1996-10-18 1998-02-10 Vanguard International Semiconductor Corporation Structure and method for fabricating an interlayer insulating film
WO1999017358A1 (en) * 1997-09-30 1999-04-08 Infineon Technologies Ag Improved gapfill of semiconductor structure using doped silicate glasses with multi-step deposition/anneal process
KR100562215B1 (ko) * 1997-09-30 2006-03-22 지멘스 악티엔게젤샤프트 다단계 증착/어닐링 처리를 가진 도핑된 실리케이트 유리를 사용하여 반도체 구조물의 갭 충전을 개선시키는 방법
JP2006041307A (ja) * 2004-07-29 2006-02-09 Fuji Electric Holdings Co Ltd 絶縁ゲート型電界効果トランジスタの製造方法

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