JPS647573A - Light wavelength discriminating element - Google Patents

Light wavelength discriminating element

Info

Publication number
JPS647573A
JPS647573A JP62160860A JP16086087A JPS647573A JP S647573 A JPS647573 A JP S647573A JP 62160860 A JP62160860 A JP 62160860A JP 16086087 A JP16086087 A JP 16086087A JP S647573 A JPS647573 A JP S647573A
Authority
JP
Japan
Prior art keywords
wavelength
electrodes
light
grown
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62160860A
Other languages
Japanese (ja)
Inventor
Kunimitsu Yajima
Futatsu Shirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62160860A priority Critical patent/JPS647573A/en
Publication of JPS647573A publication Critical patent/JPS647573A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable discrimination and detection of a signal based on wavelength of an irradiating light by a method wherein two or more heterojunctions, which generate two-dimensional electron gas at different distance from an element surface which receives light rays, are provided on a substrate and ohmic electrodes are provided on both faces of the junctions. CONSTITUTION:A high-purity GaAs layer 2 is grown on a semi-insulating GaAs substrate 1 through MBE, and then an Si doped AlxGa1-xAs layer 3 is grown. Further, an Si doped GaAs layer 4 is grown thereon as it varies in thickness corresponding to the wavelength of an irradiating light. Ohmic electrodes formed of Au-Ge alloy are provided at both ends of heterojunctions. Therefore, when light is short in wavelength, only the electrodes of the channel, where the generating position of two-dimensional electron gas is shallow, are made to vary in conductivity, and when light is long in wavelength, the electrodes of both the shallow and deep channels are made to vary in conductivity. By these processes, electrical signals corresponding to the light wavelength can be detected and discriminated by knowing which electrodes vary significantly in conductivity and to which channel at a certain depth the electrodes correspond.
JP62160860A 1987-06-30 1987-06-30 Light wavelength discriminating element Pending JPS647573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160860A JPS647573A (en) 1987-06-30 1987-06-30 Light wavelength discriminating element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160860A JPS647573A (en) 1987-06-30 1987-06-30 Light wavelength discriminating element

Publications (1)

Publication Number Publication Date
JPS647573A true JPS647573A (en) 1989-01-11

Family

ID=15723942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160860A Pending JPS647573A (en) 1987-06-30 1987-06-30 Light wavelength discriminating element

Country Status (1)

Country Link
JP (1) JPS647573A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021511665A (en) * 2018-01-19 2021-05-06 ワイドリッヒ,ヘルムート Charge carrier guide device and its applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021511665A (en) * 2018-01-19 2021-05-06 ワイドリッヒ,ヘルムート Charge carrier guide device and its applications

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