JPS647573A - Light wavelength discriminating element - Google Patents
Light wavelength discriminating elementInfo
- Publication number
- JPS647573A JPS647573A JP62160860A JP16086087A JPS647573A JP S647573 A JPS647573 A JP S647573A JP 62160860 A JP62160860 A JP 62160860A JP 16086087 A JP16086087 A JP 16086087A JP S647573 A JPS647573 A JP S647573A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- electrodes
- light
- grown
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005533 two-dimensional electron gas Effects 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enable discrimination and detection of a signal based on wavelength of an irradiating light by a method wherein two or more heterojunctions, which generate two-dimensional electron gas at different distance from an element surface which receives light rays, are provided on a substrate and ohmic electrodes are provided on both faces of the junctions. CONSTITUTION:A high-purity GaAs layer 2 is grown on a semi-insulating GaAs substrate 1 through MBE, and then an Si doped AlxGa1-xAs layer 3 is grown. Further, an Si doped GaAs layer 4 is grown thereon as it varies in thickness corresponding to the wavelength of an irradiating light. Ohmic electrodes formed of Au-Ge alloy are provided at both ends of heterojunctions. Therefore, when light is short in wavelength, only the electrodes of the channel, where the generating position of two-dimensional electron gas is shallow, are made to vary in conductivity, and when light is long in wavelength, the electrodes of both the shallow and deep channels are made to vary in conductivity. By these processes, electrical signals corresponding to the light wavelength can be detected and discriminated by knowing which electrodes vary significantly in conductivity and to which channel at a certain depth the electrodes correspond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62160860A JPS647573A (en) | 1987-06-30 | 1987-06-30 | Light wavelength discriminating element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62160860A JPS647573A (en) | 1987-06-30 | 1987-06-30 | Light wavelength discriminating element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS647573A true JPS647573A (en) | 1989-01-11 |
Family
ID=15723942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62160860A Pending JPS647573A (en) | 1987-06-30 | 1987-06-30 | Light wavelength discriminating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS647573A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021511665A (en) * | 2018-01-19 | 2021-05-06 | ワイドリッヒ，ヘルムート | Charge carrier guide device and its applications |
-
1987
- 1987-06-30 JP JP62160860A patent/JPS647573A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021511665A (en) * | 2018-01-19 | 2021-05-06 | ワイドリッヒ，ヘルムート | Charge carrier guide device and its applications |
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