JPS647476B2 - - Google Patents

Info

Publication number
JPS647476B2
JPS647476B2 JP56191577A JP19157781A JPS647476B2 JP S647476 B2 JPS647476 B2 JP S647476B2 JP 56191577 A JP56191577 A JP 56191577A JP 19157781 A JP19157781 A JP 19157781A JP S647476 B2 JPS647476 B2 JP S647476B2
Authority
JP
Japan
Prior art keywords
phosphor
electroluminescent device
dielectric
silane coupling
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56191577A
Other languages
Japanese (ja)
Other versions
JPS5893195A (en
Inventor
Meiso Yokoyama
Makoto Takahashi
Sadamasa Myashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Seiki Co Ltd
Original Assignee
Nippon Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seiki Co Ltd filed Critical Nippon Seiki Co Ltd
Priority to JP56191577A priority Critical patent/JPS5893195A/en
Publication of JPS5893195A publication Critical patent/JPS5893195A/en
Publication of JPS647476B2 publication Critical patent/JPS647476B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 この発明は、電圧を印下することにより電界発
光を行う電界発光素子に関し、特に高輝度発光を
行う分散型電界発光素子に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electroluminescent device that emits electroluminescence by applying a voltage, and particularly to a distributed electroluminescent device that emits high-intensity light.

第1図は、従来の分散型電界発光素子の構造を
示す断面図であり、1は表示面を構成する透明な
ガラス基板、2はガラス基板1上に電極材料とし
て酸化スズを膜厚約2000Åに電子ビーム蒸着法に
より成膜し、熱処理を施して形成した透明電極、
3は後述する螢光層、4は螢光層3上にアルミニ
ウムを膜厚約2000Åに電子ビーム蒸着法によつて
形成した反射性を有する金属背面電極で、これら
ガラス基板1、透明電極2、螢光層3、背面電極
4は分散型電界発光セル(以下ELセルと略す)
5を構成する。6はELセル5の表示面部分を除
いてELセル5を密封状態で包囲するポリカーボ
ネート樹脂製のカバーであるが、このカバー6は
前記樹脂の他に金属やガラス等ガスの漏洩が生じ
ない限りいずれでも良く、表示面に対向する部分
のみ透明であればELセル5全体を包囲する形状
でもかまわない。
FIG. 1 is a cross-sectional view showing the structure of a conventional dispersion type electroluminescent device, in which 1 is a transparent glass substrate that constitutes the display surface, and 2 is a film of tin oxide as an electrode material on the glass substrate 1 with a thickness of about 2000 Å. Transparent electrodes formed using electron beam evaporation and heat treatment.
3 is a fluorescent layer to be described later; 4 is a metal back electrode having reflective properties formed by forming aluminum on the fluorescent layer 3 to a thickness of about 2000 Å by electron beam evaporation; these glass substrate 1, transparent electrode 2, The fluorescent layer 3 and the back electrode 4 are distributed electroluminescent cells (hereinafter abbreviated as EL cells).
5. 6 is a cover made of polycarbonate resin that hermetically surrounds the EL cell 5 except for the display surface part of the EL cell 5, but this cover 6 is made of metal or glass other than the resin as long as gas leakage does not occur. Any shape is acceptable, and as long as only the portion facing the display surface is transparent, the shape may surround the entire EL cell 5.

ところで、前記螢光層5は、母体材料内に発光
中心を形成する活性材料および付活材料を添加し
た螢光体と、高誘電率を有してバインダーとなる
誘電体とを、分散させて生成したペースト状物質
を膜厚約10μmにシルクスクリーン法により形成
してあり、たとえば、母体材料に硫化亜鉛、活性
材料に銅、付活材料にアルミニウム、誘電体にシ
アノエチルヒドロチシセルロースやアクリルおよ
びエポキシ等の樹脂が用いられる。
By the way, the phosphor layer 5 is made by dispersing a phosphor added with an active material and an activating material to form a luminescent center in a base material, and a dielectric material having a high dielectric constant and serving as a binder. The resulting paste-like material is formed into a film with a thickness of about 10 μm using a silk screen method. For example, zinc sulfide is used as the base material, copper is used as the active material, aluminum is used as the activating material, and cyanoethylhydrocytic cellulose, acrylic, and epoxy are used as the dielectric material. Resins such as are used.

このような構成では、電極2,4間に数KHzの
規則的な交流電圧を印加することによつて螢光層
3内に発生した電界により発光中心である銅の電
子が励起されて縁色の電界発光を生じ、この発光
による光線が直接あるいは背面電極4で反射され
てガラス基板1を通つて外部へ照射される。
In such a configuration, by applying a regular alternating current voltage of several KHz between the electrodes 2 and 4, an electric field generated in the phosphor layer 3 excites electrons in copper, which is the luminescent center, and produces a fringe color. Electroluminescence is generated, and the light rays from this emission are irradiated to the outside through the glass substrate 1 either directly or reflected by the back electrode 4.

この発明は前記構成を有する分散型の電界発光
素子に対して、更に高い発光輝度を可能とするた
めに技術的手段を駆使したものであり、螢光体と
誘電体から成る螢光層内にシランカツプリング剤
を加えることにより、前記螢光体と誘電体との接
合界面状態を良好にして発光強度の高い電界発光
素子を提供することを目的とするものである。
This invention makes full use of technical means to enable even higher luminance in the dispersion type electroluminescent device having the above structure. By adding a silane coupling agent, the state of the bonding interface between the phosphor and the dielectric is improved to provide an electroluminescent device with high emission intensity.

以下、この発明の実施例について述べる。 Examples of this invention will be described below.

第2図は、この実施例を示す分散型電界発光素
子の構造を示す断面図であり、ガラス基板1、透
明電極2、背面電極4、ケース6は前記第1図の
従来例と同材料が同条件にて使用されており、特
徴はELセル50の構成の一部を成す螢光層30
にある。
FIG. 2 is a sectional view showing the structure of a distributed electroluminescent device according to this embodiment, and the glass substrate 1, transparent electrode 2, back electrode 4, and case 6 are made of the same materials as in the conventional example shown in FIG. It is used under the same conditions and is characterized by the fluorescent layer 30 forming part of the structure of the EL cell 50.
It is in.

螢光体と誘電体からなる従来の螢光層3の発光
状態を詳しく観測分折した結果、前記螢光体と誘
電体との接合界面の極性が揃つている螢光層3ほ
ど強い発光強度が得られることが判明した。
As a result of detailed observation and analysis of the emission state of the conventional phosphor layer 3 made of a phosphor and a dielectric, it was found that the phosphor layer 3 in which the polarity of the bonding interface between the phosphor and the dielectric is uniform has a higher emission intensity. It turned out that it was possible to obtain

この発明は、この現象を積極的に利用する構成
として、螢光体と誘電体とから成る螢光材内にシ
ランカツプリング剤を添加し、螢光体と誘電体の
接合界面の極性を強制的に揃えて強固に結合さ
せ、これを膜厚約10μmにシルクスクリーン法に
より透明電極2上に塗布した後約100℃で熱処理
を行い、螢光層30を構成したものである。
In this invention, a silane coupling agent is added to a fluorescent material consisting of a fluorescent material and a dielectric material to make active use of this phenomenon, thereby forcing the polarity of the bonding interface between the fluorescent material and the dielectric material. The phosphor layer 30 was formed by applying the film to a thickness of about 10 μm on the transparent electrode 2 by a silk screen method, and then heat-treating it at about 100° C.

第3図は、このような構成から成る分散型電界
発光素子において、螢光層30内の螢光体には、
硫化亜鉛から成る母体材料に、銅から成る活性材
料とアルミニウムから成る付活材料を添加し、ま
た、バインダーとなる誘電体には、エポキシ樹脂
を各々用い、これら螢光材内に入れるシランカツ
プリング剤の添加量を変化させて測定した印加電
圧と発光輝度との関係を示す図で、右肩の数字は
シランカツプリング剤の添加量を示す。
FIG. 3 shows that in a distributed electroluminescent device having such a configuration, the phosphor in the phosphor layer 30 includes:
An active material made of copper and an activated material made of aluminum are added to a base material made of zinc sulfide, and an epoxy resin is used as a dielectric material to serve as a binder, and a silane coupling is inserted into these fluorescent materials. This is a diagram showing the relationship between the applied voltage and the luminescence brightness measured by varying the amount of the silane coupling agent added, and the number on the right side indicates the amount of the silane coupling agent added.

これによりシランカツプリング剤の添加量が
5wt%を越えると発光開始電圧が低くなり、同じ
値の電圧の印加に対して発光輝度が増加し、最終
的に到達する最大発光輝度も高くなることがわか
る。
This reduces the amount of silane coupling agent added.
It can be seen that when the amount exceeds 5 wt%, the emission starting voltage becomes low, the emission brightness increases with respect to the application of the same value of voltage, and the maximum emission brightness that is finally reached also becomes high.

なお、シランカツプリング剤の添加量がある値
より多くなるとELセル50の両電極2,4間の
端子電圧供給が少なくなり電流密度が上昇するた
めシランカツプリング剤の添加量には限度があ
り、この実施例においては23wt%を越えると前
記現象が認められた。
Note that if the amount of silane coupling agent added exceeds a certain value, the terminal voltage supply between both electrodes 2 and 4 of the EL cell 50 will decrease and the current density will increase, so there is a limit to the amount of silane coupling agent added. In this example, the above phenomenon was observed when the content exceeded 23 wt%.

このように、螢光体と誘電体とからなる螢光層
をその構成の一部として有する分散型の電界発光
素子において、前記螢光体を誘電体とからなる螢
光材の中にシランカツプリング剤を適当量すなわ
ち5〜23wt%添加して螢光層を形成することに
より、螢光体と誘電体との接合界面の極性が揃え
られ、螢光層内でお互いが強固な状態で結合され
ることになり、よつて従来構造に比べて低い電圧
での発光が可能となり、同じ値の電圧印加に対す
る発光輝度が増し、最終的に致達する最大発光輝
度も高くなるという効果が得られ、コントラスト
の良好な表示素子が得られるものである。
In this way, in a dispersed electroluminescent device having a phosphor layer made of a phosphor and a dielectric as part of its structure, the phosphor is embedded in a silane cup within a phosphor made of a dielectric. By adding an appropriate amount of ring agent, i.e. 5 to 23 wt%, to form a phosphor layer, the polarity of the bonding interface between the phosphor and dielectric is aligned, and they are firmly bonded to each other within the phosphor layer. Therefore, compared to the conventional structure, it is possible to emit light at a lower voltage, and the effect is that the light emission brightness increases when the same value of voltage is applied, and the maximum light emission brightness that is finally reached is also increased. A display element with good contrast can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来の分散型電界発光素子の構造を
示す断面図、第2図は、この発明の実施例を示す
分散型電界発光素子の構造を示す断面図、第3図
は、分散型電界発光素子の印加電圧に対する発光
輝度との関係を示す特性図である。 1:ガラス基板、2:透明電極、30:螢光
層、4:背面電極。
FIG. 1 is a cross-sectional view showing the structure of a conventional distributed electroluminescent device, FIG. 2 is a cross-sectional view showing the structure of a distributed electroluminescent device according to an embodiment of the present invention, and FIG. FIG. 2 is a characteristic diagram showing the relationship between luminance and luminance applied to an electroluminescent element. 1: Glass substrate, 2: Transparent electrode, 30: Fluorescent layer, 4: Back electrode.

Claims (1)

【特許請求の範囲】[Claims] 1 電圧を印加することにより電界発光を行う螢
光層を有する分散型の電界発光素子において、前
記螢光層を構成する螢光体と誘電体との中にシラ
ンカツプリング剤を5〜23ωt%添加したことを
特徴とする電界発光素子。
1. In a dispersed electroluminescent device having a fluorescent layer that emits electroluminescence when a voltage is applied, 5 to 23 ωt% of a silane coupling agent is contained in the phosphor and dielectric that constitute the fluorescent layer. An electroluminescent device characterized by the addition of additives.
JP56191577A 1981-11-28 1981-11-28 Field light emitting element Granted JPS5893195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191577A JPS5893195A (en) 1981-11-28 1981-11-28 Field light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191577A JPS5893195A (en) 1981-11-28 1981-11-28 Field light emitting element

Publications (2)

Publication Number Publication Date
JPS5893195A JPS5893195A (en) 1983-06-02
JPS647476B2 true JPS647476B2 (en) 1989-02-08

Family

ID=16276968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191577A Granted JPS5893195A (en) 1981-11-28 1981-11-28 Field light emitting element

Country Status (1)

Country Link
JP (1) JPS5893195A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02201890A (en) * 1989-01-31 1990-08-10 Seikosha Co Ltd Electroluminescence device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104555A (en) * 1977-01-27 1978-08-01 Atkins & Merrill, Inc. High temperature encapsulated electroluminescent lamp

Also Published As

Publication number Publication date
JPS5893195A (en) 1983-06-02

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