JPH01200593A - Manufacture of electroluminescence display element - Google Patents
Manufacture of electroluminescence display elementInfo
- Publication number
- JPH01200593A JPH01200593A JP63023887A JP2388788A JPH01200593A JP H01200593 A JPH01200593 A JP H01200593A JP 63023887 A JP63023887 A JP 63023887A JP 2388788 A JP2388788 A JP 2388788A JP H01200593 A JPH01200593 A JP H01200593A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- layer
- insulation layer
- display element
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000005401 electroluminescence Methods 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910007609 Zn—S Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- IVUXZQJWTQMSQN-UHFFFAOYSA-N distrontium;oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Sr+2].[Ta+5].[Ta+5] IVUXZQJWTQMSQN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、低電圧て駆動することかできるエレクトロル
ミネセンス表示素子の製造方法の改良に関し、特にその
強誘電体絶縁層の形成方法の改良に関するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to an improvement in a method for manufacturing an electroluminescent display element that can be driven at a low voltage, and in particular to an improvement in a method for forming a ferroelectric insulating layer. It is related to.
（従来技術）
エレクトロルミネセンス表示素子は、一般に絶縁基板と
この絶縁基板の上に取付けられた表示素子本体とから成
っており１表示素子本体は絶縁基板の上に順次設けられ
た第１の電極と強誘電体絶縁層と発光層と第２の電極と
を含んでいる。従来技術では、絶縁基板としてアルミナ
等のセラミック材料が用いられ１強誘電体絶縁層は、セ
ラミック絶縁基板及び第１の電極と共に焼成されたチタ
ン酸バリウムまたはチタン酸鉛から成っており、この強
誘電体絶縁層は。(Prior Art) An electroluminescent display element generally consists of an insulating substrate and a display element body mounted on the insulating substrate.The display element body has first electrodes successively provided on the insulating substrate. , a ferroelectric insulating layer, a light emitting layer, and a second electrode. In the prior art, a ceramic material such as alumina is used as the insulating substrate, and the first ferroelectric insulating layer is made of barium titanate or lead titanate fired together with the ceramic insulating substrate and the first electrode. body insulation layer.
発光層中に電流が注入するのを制限する働きを有する。It has the function of restricting current injection into the light emitting layer.
発光層は、ＺｎＳ等のＩＩ−ＶＩ材料中に発光センタと
してＭｎ、Ｔｂ等の遷移金属または稀土類元素を０．１
〜５重量％混入して形成されている。The light-emitting layer contains 0.1% of a transition metal or rare earth element such as Mn or Tb as a light-emitting center in a II-VI material such as ZnS.
It is formed by mixing ~5% by weight.
（発明が解決しようとする課題）
この表示素子において発光層に上下の電極を介してＩ
Ｍ Ｖ ／ ｃ ｍ程度の高電界を印加すると、発光セ
ンタ特有の発光色で発光する。この構造の表示素子は強
誘電体絶縁層の焼ｒ＃、後の比誘電率が１００００以上
となり、ＩＫｈｚパルス駆動で発光しきい値が６０Ｖで
最高輝度が１０００ ｃ ｄ ／ ｍ ２以上となる。(Problem to be Solved by the Invention) In this display element, an I
When a high electric field of about MV/cm is applied, the light emitting center emits light with a color unique to it. A display element with this structure has a ferroelectric insulating layer with a dielectric constant of 10,000 or more, a light emission threshold of 60 V, and a maximum luminance of 1,000 c d/m 2 or more when driven by IKhz pulses.
しかし９強誘電体を焼成した後得られた結晶粒径はｌ終
ｍ以上であって発光層の膜厚以上の表面変動があるので
この絶縁層の上に良好な結晶性の薄膜を得ることかでき
ない。従って９発光層内で発光輝度の大きなばらつきか
生じ１発光しきい値電圧をすぎても輝度の立ち上がりが
急峻ではなくなり。However, the crystal grain size obtained after firing the ferroelectric material 9 is larger than 1 m, and the surface variation is greater than the film thickness of the light emitting layer, so it is difficult to obtain a thin film with good crystallinity on this insulating layer. I can't do it. Therefore, large variations in luminance occur within the nine light-emitting layers, and the rise in luminance is not steep even after one luminescence threshold voltage is exceeded.
また強誘電体の結晶粒界から発光に寄与しない移動電荷
があるので効率が低い欠点があった。Furthermore, there is a drawback of low efficiency because there are moving charges that do not contribute to light emission from the grain boundaries of the ferroelectric material.
本発明の目的は、絶縁層である強誘電体の結晶性及び表
面平滑性を改善して高い効率を有し安定した発光特性を
有するエレクトロルミネセンス表示素子を製造する方法
を提供することにある。An object of the present invention is to provide a method for manufacturing an electroluminescent display element having high efficiency and stable light emitting characteristics by improving the crystallinity and surface smoothness of a ferroelectric material that is an insulating layer. .
（課題を解決するための手段）
本発明に係る方法によって製造されるエレクトロルミネ
センス表示素子は、ガラス基板とこのガラス基板の上に
取付けられた表示素子本体とから成り、この表示素子本
体はガラス基板の上に順次設けられた第１の電極と強誘
電体絶縁層と発光層と第２の電極とを含んでおり９本発
明の製造方法によれば１強誘電体絶縁層はガラス基板上
の第１の電極の上に未焼成の強誘電体粉末材料を溶剤に
溶かして塗布した後ガラス基板と第１の電極とを通して
レーザビームを照射して焼成して形成することを特徴と
している。(Means for Solving the Problems) An electroluminescent display element manufactured by the method according to the present invention consists of a glass substrate and a display element body mounted on the glass substrate, and this display element body is made of glass. It includes a first electrode, a ferroelectric insulating layer, a light emitting layer, and a second electrode, which are sequentially provided on a substrate.9 According to the manufacturing method of the present invention, one ferroelectric insulating layer is formed on a glass substrate. The method is characterized in that an unfired ferroelectric powder material is dissolved in a solvent and applied onto the first electrode, and then fired by irradiating a laser beam through the glass substrate and the first electrode.
（作用）
強誘電体絶縁層をこのように未焼成粉末材料に直接レー
ザビームを照射して形成すると９強誘電体絶縁層は薄く
且つ比誘電率が大きくなるのて従来に比べて発光しきい
値電圧が２０Ｖ低くなり、また粒界からの漏れ電流が少
なくなるために従来に比べて効率が５〜６倍向上する。(Function) When the ferroelectric insulating layer is formed by directly irradiating the unfired powder material with a laser beam in this way, the ferroelectric insulating layer is thinner and has a higher dielectric constant, so it has a lower emission threshold than the conventional one. The value voltage is lowered by 20V, and the leakage current from the grain boundaries is reduced, so the efficiency is improved by 5 to 6 times compared to the conventional method.
（実施例）
本発明の実施例を図面を参照して詳細に説明すると、第
１図は本発明の方法によって製造されるエレクトロルミ
ネセンス表示素子１０を示し、このエレクトロルミネセ
ンス表示素子ｌＯは、ガラス基板１２と、このガラス基
板１２の上に取付けられた表示素子本体１４とから成っ
ている。表示素子本体１４はガラス基板１２の上に順次
設けられたＩ Ｔｏ、 Ｚ’ｎＯ： Ａ １等から成る
透明の第１の電極１６と、後にのべる方法によって形成
される強誘電体絶縁層１８と。(Example) An example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows an electroluminescent display element 10 manufactured by the method of the present invention, and this electroluminescent display element lO is It consists of a glass substrate 12 and a display element body 14 mounted on the glass substrate 12. The display element main body 14 includes a transparent first electrode 16 made of ITo, Z'nO:A1, etc., which is sequentially provided on the glass substrate 12, and a ferroelectric insulating layer 18 formed by a method described later. .
硫化亜鉛（ＺｎＳ）、ＭＥ化カルシウム（ＣａＳ）の如
きＩＩ−Ｖｌ化合物中に発光センタとして遷移金属また
は稀土類元素を０．１〜５重量％含む材料から成る発光
層２０と、ＩＴＯ，Ｚｎｏ：Ａｌの如き透明導電性材料
から成る第２の電極２２とを含んでいる。図示の実施例
では、強誘電体絶縁層１８と発光層２０との間に強誘電
体絶縁層１８．例えばＰ ｄ Ｔ ｉ Ｏｙ中のＰｄま
たはＴｉが発光層２０に拡散して輝度が低下するのを防
止するためにＳｉＯ，、Ｔａ２０５の如き介在層２４が
設けられている。A luminescent layer 20 made of a material containing 0.1 to 5% by weight of a transition metal or rare earth element as a luminescent center in a II-Vl compound such as zinc sulfide (ZnS) or calcium ME oxide (CaS), and ITO, Zno: and a second electrode 22 made of a transparent conductive material such as Al. In the illustrated embodiment, a ferroelectric insulating layer 18 . For example, in order to prevent Pd or Ti in P d Ti Oy from diffusing into the light emitting layer 20 and reducing the brightness, an intervening layer 24 such as SiO, Ta205 is provided.
強誘電体絶縁層１８は、第２図に示すように、ガラス基
板１２上の第１の電極１６の上にＰｄＴｉｏｚ（チタン
酸鉛）の如き未焼成の微細な強誘電体粉末材料をエタノ
ールの如き溶剤に溶かして分散させて１０〜２０ｐｍの
厚みに塗布し、溶剤を１００℃〜１５０°Ｃの温度で乾
燥した後ガラス基板１２と第１の電極１６とを通してキ
セノン、ＹＡＧレーザ等の紫外線レーザビーム２６を８
０Ｊ／ｃｍ”以上のパワーてＰｄ Ｔ ｉ Ｏｚに照射
し焼成して形成する。尚、介在層２４はＳ ｉ０２ 、
Ｔａ２０５またはその混合物をスパッタリング法、ＥＢ
Ｊ着法によって成膜して形成し９発光層２０はＺｎ：Ｓ
Ｍｎ（１重量％）をＥＢ蒸着法、ＭＯ−ＣＶＤ法、スパ
ッタリング法等によって５０００Ａ程度の厚みに成膜し
て形成する。As shown in FIG. 2, the ferroelectric insulating layer 18 is formed by depositing an unfired fine ferroelectric powder material such as PdTioz (lead titanate) on the first electrode 16 on the glass substrate 12 in ethanol. After dissolving and dispersing in a solvent such as Beam 26 to 8
It is formed by irradiating and firing Pd TiOz with a power of 0 J/cm" or more. Note that the intervening layer 24 is made of Si02,
Sputtering Ta205 or its mixture, EB
The light-emitting layer 20 is formed by forming a film using the J-deposition method and is made of Zn:S.
It is formed by forming a film of Mn (1% by weight) to a thickness of about 5000 Å by EB evaporation, MO-CVD, sputtering, or the like.
強誘電体絶縁層１８をこのように未焼成粉末材料に直接
レーザビームを照射して形成すると、強誘電体絶縁Ｐ１
８は５〜１５ＪＬｍと薄く形成することができ、またそ
の比誘電率は８０００以上に大きく、且つ絶縁層１８は
柱状結晶構造となって表面が充分に平滑となる。従って
。When the ferroelectric insulating layer 18 is formed by directly irradiating the unsintered powder material with a laser beam in this way, the ferroelectric insulating layer 18
8 can be formed as thin as 5 to 15 JLm, and its dielectric constant is as large as 8000 or more, and the insulating layer 18 has a columnar crystal structure and has a sufficiently smooth surface. Therefore.
従来に比べて発光しきい値電圧が２０Ｖ低くなり、また
粒界からの漏れ電流が少なくなるために従来に比べて効
率が５〜６倍向上する。尚。Compared to the conventional method, the emission threshold voltage is lowered by 20 V, and the leakage current from the grain boundaries is reduced, so that the efficiency is improved by 5 to 6 times compared to the conventional method. still.
上記実施例では９強誘電体絶縁層１８の材料としてＰｄ
Ｔｉ０．か用いられたが、これ以外にＳ ｒ Ｔ ａ
Ｏ３（タンタル酸ストロンチウム）を用いることができ
、いずれの場合も鉄、マンガン等の不純物を含んでいて
もよい。また、レザビームは紫外線の外に赤外線を用い
てもよく。In the above embodiment, the material of the ferroelectric insulating layer 18 is Pd.
Ti0. In addition to this, S r Ta
O3 (strontium tantalate) can be used, and in either case, impurities such as iron and manganese may be included. In addition to ultraviolet rays, laser beams may also use infrared rays.
この場合には電極であるＩＴＯが黒化し抵抗率が変化し
て好ましい。In this case, the ITO electrode becomes black and the resistivity changes, which is preferable.
（発明の効果）
本発明によれば、上記のように２強誘電体絶縁層は薄く
大きな比誘電率で形成することができる上に表面が平滑
となるのでこの絶縁層の上に設けられた発光層の結晶性
が向上し、従って発光特性が向上し、また電界が効率的
に印加されるのて発光効率を向上することができる実益
がある。(Effects of the Invention) According to the present invention, as described above, the two ferroelectric insulating layers can be formed thinly and have a large dielectric constant, and the surface can be smooth, so that the two ferroelectric insulating layers can be formed on the insulating layer. There is a practical benefit that the crystallinity of the light-emitting layer is improved, and therefore the light-emitting characteristics are improved, and the electric field is efficiently applied, so that the light-emitting efficiency can be improved.
第１図は本発明の方法によって製造されるエレクトロル
ミネセンス表示素子の断面図、第２図は本発明の要部の
拡大断面図である。FIG. 1 is a cross-sectional view of an electroluminescent display element manufactured by the method of the present invention, and FIG. 2 is an enlarged cross-sectional view of essential parts of the present invention.
１０−−−ｍ−エレクトロルミネセンス表示素子、１２
−−−−−ガラス基板、１４−−一−−表示素子本体、
１６．２２−−−−一第１及び第２の電極、１８−−−
−一強誘電体絶縁層、２６−−−−−レーザビーム。10--m-electroluminescent display element, 12
-----Glass substrate, 14--1--display element body,
16.22---first and second electrodes, 18--
- one ferroelectric insulating layer, 26 - laser beam;
Claims (1)
素子本体とから成り，前記表示素子本体は前記ガラス基
板の上に順次設けられた第１の電極と強誘電体絶縁層と
発光層と第２の電極とを含むエレクトロルミネセンス表
示素子の製造方法において，前記強誘電体絶縁層は前記
ガラス基板上の第１の電極の上に未焼成の強誘電体粉末
材料を溶剤に溶かして塗布した後前記ガラス基板と第１
の電極とを通してレーザビームを照射して焼成して形成
することを特徴とするエレクトロルミネセンス表示素子
の製造方法。It consists of a glass substrate and a display element body mounted on the glass substrate, and the display element body includes a first electrode, a ferroelectric insulating layer, a light emitting layer, and a second electrode, which are sequentially provided on the glass substrate. In the method for manufacturing an electroluminescent display element, the ferroelectric insulating layer is formed by dissolving an unfired ferroelectric powder material in a solvent and applying the ferroelectric insulating layer onto the first electrode on the glass substrate. the glass substrate and the first
1. A method for manufacturing an electroluminescent display element, characterized in that the electroluminescent display element is formed by irradiating a laser beam through an electrode and firing the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023887A JPH01200593A (en) | 1988-02-05 | 1988-02-05 | Manufacture of electroluminescence display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023887A JPH01200593A (en) | 1988-02-05 | 1988-02-05 | Manufacture of electroluminescence display element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01200593A true JPH01200593A (en) | 1989-08-11 |
Family
ID=12122960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63023887A Pending JPH01200593A (en) | 1988-02-05 | 1988-02-05 | Manufacture of electroluminescence display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01200593A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4128267A1 (en) * | 1990-09-01 | 1992-03-05 | Fuji Electric Co Ltd | ELECTROLUMINESCENCE (EL) DISPLAY PANEL AND METHOD FOR THE PRODUCTION THEREOF |
| WO1998054094A1 (en) * | 1997-05-26 | 1998-12-03 | Kri International, Inc. | PROCESS FOR PREPARING In2O3-SnO2 PRECURSOR SOL AND PROCESS FOR PREPARING THIN FILM OF In2O3-SnO¿2? |
| GB2347145A (en) * | 1999-02-25 | 2000-08-30 | Agency Ind Science Techn | Method for producing a metal oxide and forming a minute pattern thereof |
-
1988
- 1988-02-05 JP JP63023887A patent/JPH01200593A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4128267A1 (en) * | 1990-09-01 | 1992-03-05 | Fuji Electric Co Ltd | ELECTROLUMINESCENCE (EL) DISPLAY PANEL AND METHOD FOR THE PRODUCTION THEREOF |
| WO1998054094A1 (en) * | 1997-05-26 | 1998-12-03 | Kri International, Inc. | PROCESS FOR PREPARING In2O3-SnO2 PRECURSOR SOL AND PROCESS FOR PREPARING THIN FILM OF In2O3-SnO¿2? |
| US6235260B1 (en) | 1997-05-26 | 2001-05-22 | Kri International, Inc. | Method for producing In2O3—SnO2 precursor sol |
| GB2347145A (en) * | 1999-02-25 | 2000-08-30 | Agency Ind Science Techn | Method for producing a metal oxide and forming a minute pattern thereof |
| GB2347145B (en) * | 1999-02-25 | 2001-05-02 | Agency Ind Science Techn | Method for producing a metal oxide and method for forming a minute pattern |
| US6576302B1 (en) | 1999-02-25 | 2003-06-10 | Agency Of Industrial Science And Technology | Method for producing a metal oxide and method for forming a minute pattern |
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