JPS61230295A - Flexible type light emitting element - Google Patents
Flexible type light emitting elementInfo
- Publication number
- JPS61230295A JPS61230295A JP60070934A JP7093485A JPS61230295A JP S61230295 A JPS61230295 A JP S61230295A JP 60070934 A JP60070934 A JP 60070934A JP 7093485 A JP7093485 A JP 7093485A JP S61230295 A JPS61230295 A JP S61230295A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- electrode
- metal foil
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はフレキシブル型発光素子に係わり、OA機器、
自動車機器、家庭電子機器及び電装品に好適なフレキシ
ブル型発光素子に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a flexible light emitting device, and is applicable to office automation equipment,
The present invention relates to a flexible light emitting element suitable for automobile equipment, household electronic equipment, and electrical equipment.
現在、内外各社でフレキシブル型の分散型発 。 Currently, flexible and decentralized development is being conducted at both domestic and overseas companies.
光素子の開発が行なわれており、すでに市販されている
各種液晶表示素子や液晶テレビのバックライト及び種々
の表示デバイスとして実用化が拡がりつつある、しかし
、まだ本格的に需要が伸びな(・のは、寿命の問題もあ
るが、輝度が今−歩不足ということにもある。従来のフ
レキシブル型発光素子は日経エレクトロニクス19B0
゜II、24号第220頁〜227頁に記載されている
ように、透明電極と背面電極との間に螢光体発光層と反
射絶縁層を備えた構造である。実際に作成されている素
子では、その発光層の膜厚(電極間隔)が60μm以上
と太きい。従って、例えば100vの電圧を臼加した場
合の発光層に加わる平均電場強度は1.7 V/μm以
下である。元来電場発光性のZrLS系螢光体の発光輝
度の電場依存性は大きく、電場強度の2〜5乗に比例す
るので、印加電場の周波数を高くしないで輝度をあげる
には発光層に加わる平均1場強度を少くとも2v/μm
以上、2.5 V/μm位に向上させる必要がある。そ
れには、従来よりも発光i(反射層を含む)膜厚を現状
の60〜70μmをその215位に薄くしなければなら
ない。それには両電極間の絶縁耐圧を大巾に向上させる
必要がある。Optical devices are being developed and are being put into practical use as various liquid crystal display devices on the market, backlights for liquid crystal televisions, and various display devices.However, demand has not yet grown in earnest. This is partly due to the problem of lifespan, but also because the brightness is currently insufficient.The conventional flexible type light emitting element is Nikkei Electronics 19B0.
As described in No. 24, pp. 220-227, this structure has a fluorescent light-emitting layer and a reflective insulating layer between a transparent electrode and a back electrode. In devices that have actually been produced, the thickness of the light emitting layer (electrode spacing) is as large as 60 μm or more. Therefore, for example, when a voltage of 100 V is applied, the average electric field strength applied to the light emitting layer is 1.7 V/μm or less. The electric field dependence of the luminescence brightness of ZrLS-based phosphors, which are inherently electroluminescent, is large and is proportional to the second to fifth power of the electric field strength. Therefore, in order to increase the brightness without increasing the frequency of the applied electric field, it is necessary to add to the light-emitting layer. Average field strength of at least 2v/μm
As described above, it is necessary to improve the voltage to about 2.5 V/μm. To do this, the thickness of the light emitting layer (including the reflective layer) must be reduced from the current 60 to 70 .mu.m to about 215 .mu.m compared to the conventional one. To achieve this, it is necessary to greatly improve the dielectric strength between the two electrodes.
本発明の目的は、前述の従来法くよるフレキシブル型発
光素子の欠点を排し、輝度及び発光効率を大ぎく向上さ
せたフレキシブル型発光素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a flexible light emitting device which eliminates the disadvantages of the conventional flexible light emitting device described above and greatly improves brightness and luminous efficiency.
本発明は絶縁耐圧を向上させ、それだけ電極間隔を小に
して発光層に加わる平均電界強度を大きくして輝度を向
上させ、かつ発光時における実効電流を低減して発光効
率を向上させたフレキシブル型発光素子である。絶縁耐
圧を向上させる手段は背面電極として使用する金属箔表
百K、例えば有機金属錯体法またはスパッタリンク法に
より05〜0.5μm厚の酸化チタン薄層を設けるもの
である。The present invention is a flexible type that improves the dielectric strength, reduces the electrode spacing, increases the average electric field strength applied to the light emitting layer, improves brightness, and improves the luminous efficiency by reducing the effective current during light emission. It is a light emitting element. A means for improving the dielectric strength is to provide a thin layer of titanium oxide with a thickness of 0.5 to 0.5 .mu.m on the surface of the metal foil used as the back electrode, for example, by an organometallic complex method or a sputter link method.
以下、本発明の一実施例を第1図により説明する。フレ
キシブル型発光素子の背面電極となる厚さ0.1aam
のアルミニウム箔板1上にチタンテトライソプロポキシ
ド1部重量、安定剤アクリルエステル8A(三菱レーヨ
ン製商品名)1部重量及び稀釈溶剤155部重量らなる
チタニウムアルコキシド処理液を浸漬法またはスピン塗
布法により塗布し、乾燥させた後450で約4(3rn
inの焼成を行ない上記アルミニウム箔上に約o、4μ
m厚の配化チタン薄膜2を形成する。An embodiment of the present invention will be described below with reference to FIG. Thickness 0.1aam, which becomes the back electrode of the flexible light emitting element
A titanium alkoxide treatment solution consisting of 1 part by weight of titanium tetraisopropoxide, 1 part by weight of stabilizer acrylic ester 8A (trade name manufactured by Mitsubishi Rayon) and 155 parts by weight of a diluting solvent was applied onto an aluminum foil plate 1 by dipping or spin coating. After coating and drying, it is approximately 4 (3rn) at 450°C.
About o, 4μ on the above aluminum foil by baking in.
A structured titanium thin film 2 having a thickness of m is formed.
次に前記酸化チタン薄膜2上にドクターブレード法によ
り電場発光性螢光体とシアノエチル化サッカローズとシ
アノエチル化セルローズ及び溶剤よりなる螢光体スラリ
ーを塗布し、引続き120′cで加熱して乾燥させ膜厚
約40μmの発光層Sを形成する。次に前記発光層5に
120t、約5hrの減圧加熱処理を施した後、乾燥雰
囲気中150でで加熱乾燥し、て透明導電性フィルム4
をラミネートし、それぞれ電極引出処理をした後、加熱
乾燥雰囲気中でS弗化塩化エチレン系のエンベロープ5
に入れ、周縁部6を圧着して7レキシプル型発光素子を
作成した。Next, a phosphor slurry consisting of an electroluminescent phosphor, a cyanoethylated saccharose, a cyanoethylated cellulose, and a solvent is applied onto the titanium oxide thin film 2 by a doctor blade method, and then heated and dried at 120'C. A light emitting layer S having a thickness of about 40 μm is formed. Next, the light-emitting layer 5 was subjected to a reduced pressure heat treatment for 120 tons and about 5 hours, and then heated and dried at 150 degrees Celsius in a dry atmosphere.
After laminating them and subjecting them to electrode extraction treatment, a S-fluorochloroethylene envelope 5 was placed in a heated drying atmosphere.
The peripheral portion 6 was crimped to produce a 7-lexiple type light emitting device.
この様にして作られた本発明に係わる発光素子の絶縁耐
圧を調べた結果、500■以上を有し、従来の素子のよ
うな無処理のアルミニウム箔電極を使用し、電極間隔的
60μmの発光素子に勝るものであった。本発明による
素子と従来の素子とにそれぞれローの250Hz、15
0■の電圧を印加して輝度特性を比較した結果、従来の
素子は輝度70cd/r?、発光効率1.5trt/W
であるのに対し、本発明によって作成した素子は輝度1
50cd/yd 、発光効率約2.5ml/Wであり、
同等の絶縁耐圧で輝度効率が大巾に向上することがわか
った0
更に、本発明の他の実施例を第2図について説明する。As a result of examining the dielectric strength of the light emitting device according to the present invention manufactured in this manner, it was found that it had a dielectric strength of 500 μm or more, used untreated aluminum foil electrodes like the conventional device, and emitted light with an electrode spacing of 60 μm. It was better than Motoko. Low 250 Hz and 15 Hz for the device according to the invention and the conventional device, respectively.
As a result of applying a voltage of 0■ and comparing the brightness characteristics, the brightness of the conventional element was 70cd/r? , luminous efficiency 1.5 trt/W
On the other hand, the device made according to the present invention has a luminance of 1
50 cd/yd, luminous efficiency of about 2.5 ml/W,
It has been found that the luminance efficiency is greatly improved with the same dielectric strength voltage.Furthermore, another embodiment of the present invention will be described with reference to FIG.
第1図と同一符号は同一部材を示している。第2図に示
された発光素子の特長部分は6で示した高誘電率光反射
層である。本実施例では、高誘電率光反射層にチタン酸
バリウムあるいはチタン酸バリウムを主成分とする材料
で構成した。その結果、本発明による酸化チタン薄膜を
形成した金属箔背面電極を用いた発光素子は、従来の素
子と比較して絶縁耐圧は約1.5倍に向上した・従りて
、それだけ電極間隔を小さくすることが可能となるため
、輝度及び発光効率面で約2倍に向上させることができ
る。The same reference numerals as in FIG. 1 indicate the same members. A feature of the light emitting device shown in FIG. 2 is a high dielectric constant light reflection layer shown at 6. In this example, the high dielectric constant light reflection layer is made of barium titanate or a material containing barium titanate as a main component. As a result, the dielectric strength of the light emitting device using the metal foil back electrode formed with the titanium oxide thin film according to the present invention was improved by about 1.5 times compared to the conventional device. Therefore, the electrode spacing could be reduced accordingly. Since it can be made smaller, the brightness and luminous efficiency can be approximately doubled.
なお、背面電極に用t・る金属箔上に酸化チタン薄膜を
形成する手段として、酸化チタンターゲットを用いるス
パッタリング法も実験した。In addition, as a means of forming a titanium oxide thin film on the metal foil used for the back electrode, a sputtering method using a titanium oxide target was also experimented.
この場合も前記同様KO15〜0.4μmの酸化チタン
薄膜が形成され、それを背面電極に使用して作成した発
光素子は従来の素子と比較して、絶縁耐圧は約1.5倍
に向上し、輝度及び発光効率も約2倍に向上する結果が
得られた。In this case as well, a titanium oxide thin film with a KO of 15 to 0.4 μm is formed as described above, and the dielectric strength of the light emitting device created using this film for the back electrode is approximately 1.5 times higher than that of the conventional device. The results showed that the brightness and luminous efficiency were also approximately doubled.
本発明の実施例で述べたように、本発明によれば、フレ
キシブル型発光素子の絶縁耐圧が著しく向上するので、
それだけ発光層膜厚を薄くして電極間隔を狭くてること
ができ、同一の外部電場を印加した場合でも螢光体層に
加わる平均電界強度が増大し、発光輝度を約2倍に向上
させることができる。また、両電極層間の絶縁性が良い
ので発光動作時における実効消費電流、実効消費電力が
低減し素子の発光効率を約2倍に向上させることができ
る。As described in the embodiments of the present invention, according to the present invention, the dielectric strength of the flexible light emitting device is significantly improved.
The thickness of the light-emitting layer can be made thinner and the distance between the electrodes can be narrowed, and even when the same external electric field is applied, the average electric field strength applied to the phosphor layer increases, increasing the luminance by about twice. Can be done. Furthermore, since the insulation between both electrode layers is good, the effective current consumption and effective power consumption during the light emitting operation are reduced, and the light emitting efficiency of the device can be approximately doubled.
第1図は本発明に係わる発光素子の一部拡大縦断面図、
第2図は本発明に係わる他の発光素子の一部拡大縦断面
図である。
1・・・背面電極層
2・・・酸化チタン薄膜層
5・・・発光層
4・・・透明電極層
5・・・エンベロープ
6・・・発生素子の周縁部
代理人弁理士 小 川 膀 労゛−
あ1 巴
晃2目FIG. 1 is a partially enlarged vertical cross-sectional view of a light emitting device according to the present invention;
FIG. 2 is a partially enlarged vertical sectional view of another light emitting element according to the present invention. 1...Back electrode layer 2...Titanium oxide thin film layer 5...Light emitting layer 4...Transparent electrode layer 5...Envelope 6...Periphery of the generating element Patent attorney Udo Ogawa゛- A1 Akira Tomoe 2nd
Claims (2)
明導電フイルムと上記金属箔背面電極との間に介在する
電場発光性螢光体を含む発光層とから成るフレキシブル
型発光素子に於いて、上記背面電極と上記発光層との間
に、酸化チタン薄膜を設けたことを特徴とするフレキシ
ブル型発光素子。1. In a flexible light emitting element comprising a transparent conductive film, a metal foil back electrode, and a light emitting layer containing an electroluminescent phosphor interposed between the transparent conductive film and the metal foil back electrode, the back A flexible light-emitting element characterized in that a titanium oxide thin film is provided between an electrode and the light-emitting layer.
明導電フイルムと上記金属箔背面電極との間に介在する
電場発光性螢光体を含む発光層とから成るフレキシブル
型発光素子に於いて、上記背面電極に接して酸化チタン
薄膜及び高誘電率反射層を設けたことを特徴とするフレ
キシブル型発光素子。2. In a flexible light emitting element comprising a transparent conductive film, a metal foil back electrode, and a light emitting layer containing an electroluminescent phosphor interposed between the transparent conductive film and the metal foil back electrode, the back A flexible light emitting device characterized by having a titanium oxide thin film and a high dielectric constant reflective layer in contact with an electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60070934A JPS61230295A (en) | 1985-04-05 | 1985-04-05 | Flexible type light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60070934A JPS61230295A (en) | 1985-04-05 | 1985-04-05 | Flexible type light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61230295A true JPS61230295A (en) | 1986-10-14 |
Family
ID=13445832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60070934A Pending JPS61230295A (en) | 1985-04-05 | 1985-04-05 | Flexible type light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61230295A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009520347A (en) * | 2005-12-19 | 2009-05-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Organic LED element |
-
1985
- 1985-04-05 JP JP60070934A patent/JPS61230295A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009520347A (en) * | 2005-12-19 | 2009-05-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Organic LED element |
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