JPS64731A - Forming device for deposited film - Google Patents

Forming device for deposited film

Info

Publication number
JPS64731A
JPS64731A JP63038728A JP3872888A JPS64731A JP S64731 A JPS64731 A JP S64731A JP 63038728 A JP63038728 A JP 63038728A JP 3872888 A JP3872888 A JP 3872888A JP S64731 A JPS64731 A JP S64731A
Authority
JP
Japan
Prior art keywords
heating element
gas
halogen
base
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63038728A
Other languages
Japanese (ja)
Other versions
JPH01731A (en
Inventor
Masahiro Kanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63-38728A priority Critical patent/JPH01731A/en
Priority claimed from JP63-38728A external-priority patent/JPH01731A/en
Publication of JPS64731A publication Critical patent/JPS64731A/en
Publication of JPH01731A publication Critical patent/JPH01731A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To enable mass production by a low-cost device while keeping uniformity by arranging a heating element exciting a raw material gas for forming a deposit film into a film formation chamber and disposing a plurality of base body holding means capable of turning or sliding a base body around the heating element.
CONSTITUTION: When the gas of a compound containing silicon and halogen is passed onto a heating element 103 consisting of a tungsten filament, the gas is activated by a thermal dissociation reaction, and a precursor such as SiF2 is formed. When hydrogen gas introduced together with the gas of the compound containing silicon and halogen is passed similarly onto the heating element 103 composed of the tungsten filament, halogen gas is activated by the catalytic action of the heating element, and changed into active hydrogen, etc., and these active hydrogen, etc. are reacted with the precursor, thus shaping desired deposit films onto two pairs of base bodies disposed to the upper and lower sections of the heating element 103. The base bodies made of stainless wheels in 30cm width, 5m length and 0.2mm thickness are placed to delivery mechanisms 109 and winding mechanisms 110, and the inside of a film formation chamber 101 is decompressed to 10-6Torr while base-body heating bases 104 are heated at 250°C.
COPYRIGHT: (C)1989,JPO&Japio
JP63-38728A 1987-03-06 1988-02-23 Deposited film forming equipment Pending JPH01731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63-38728A JPH01731A (en) 1987-03-06 1988-02-23 Deposited film forming equipment

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-50343 1987-03-06
JP5034387 1987-03-06
JP63-38728A JPH01731A (en) 1987-03-06 1988-02-23 Deposited film forming equipment

Publications (2)

Publication Number Publication Date
JPS64731A true JPS64731A (en) 1989-01-05
JPH01731A JPH01731A (en) 1989-01-05

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6410454B1 (en) 1997-06-10 2002-06-25 Mitsubishi Denki Kabushiki Method and apparatus for removing contaminants from the surface of a semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6410454B1 (en) 1997-06-10 2002-06-25 Mitsubishi Denki Kabushiki Method and apparatus for removing contaminants from the surface of a semiconductor wafer

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