JPS6466928A - Manufacture of recrystallized silicon substrate - Google Patents
Manufacture of recrystallized silicon substrateInfo
- Publication number
- JPS6466928A JPS6466928A JP22360187A JP22360187A JPS6466928A JP S6466928 A JPS6466928 A JP S6466928A JP 22360187 A JP22360187 A JP 22360187A JP 22360187 A JP22360187 A JP 22360187A JP S6466928 A JPS6466928 A JP S6466928A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- amorphous
- shaped
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To form an SOI substrate with a flat surface, and to shape an excellent semiconductor device by forming an amorphous silicon layer onto a polysilicon layer, to which layers are shaped, forming a cap film composed of an silicon dioxide layer and an silicon nitride layer onto the amorphous silicon layer and changing the polysilicon layer and the amorphous silicon layer into a single crystal through laser scanning. CONSTITUTION:An SiO2 layer 2 is formed onto an Si substrate 1 through thermal oxidation, and a poly Si layer 3 is shaped through a decompression CVD method, and an amorphous Si layer 8 is formed further through the decompression CVD. The Si substrate is thermally treated, a flat SiO2 layer 4 is shaped, and an Si3N4 layer 5 is formed through a plasma CVD method. The poly Si layer 3 and the amorphous Si layer 8 are melted and recrystallized through scanning while partially superposition-applying a laser, thus forming a single crystal layer 9. The Si3N4 layer 5 is removed by using hot phosphoric acid, and the SiO2 layer 4 is gotten rid of by a hydrofluoric acid group treating liquid, thus acquiring the recrystallized Si substrate flat in microscopic inspection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22360187A JPS6466928A (en) | 1987-09-07 | 1987-09-07 | Manufacture of recrystallized silicon substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22360187A JPS6466928A (en) | 1987-09-07 | 1987-09-07 | Manufacture of recrystallized silicon substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6466928A true JPS6466928A (en) | 1989-03-13 |
Family
ID=16800738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22360187A Pending JPS6466928A (en) | 1987-09-07 | 1987-09-07 | Manufacture of recrystallized silicon substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6466928A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6288412B1 (en) | 1994-01-26 | 2001-09-11 | Sanyo Electric Co., Ltd. | Thin film transistors for display devices having two polysilicon active layers of different thicknesses |
JP2007059601A (en) * | 2005-08-24 | 2007-03-08 | Sharp Corp | Manufacturing method of semiconductor device |
-
1987
- 1987-09-07 JP JP22360187A patent/JPS6466928A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6288412B1 (en) | 1994-01-26 | 2001-09-11 | Sanyo Electric Co., Ltd. | Thin film transistors for display devices having two polysilicon active layers of different thicknesses |
JP2007059601A (en) * | 2005-08-24 | 2007-03-08 | Sharp Corp | Manufacturing method of semiconductor device |
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