JPS6466928A - Manufacture of recrystallized silicon substrate - Google Patents

Manufacture of recrystallized silicon substrate

Info

Publication number
JPS6466928A
JPS6466928A JP22360187A JP22360187A JPS6466928A JP S6466928 A JPS6466928 A JP S6466928A JP 22360187 A JP22360187 A JP 22360187A JP 22360187 A JP22360187 A JP 22360187A JP S6466928 A JPS6466928 A JP S6466928A
Authority
JP
Japan
Prior art keywords
layer
substrate
amorphous
shaped
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22360187A
Other languages
Japanese (ja)
Inventor
Yoshihiro Boku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22360187A priority Critical patent/JPS6466928A/en
Publication of JPS6466928A publication Critical patent/JPS6466928A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To form an SOI substrate with a flat surface, and to shape an excellent semiconductor device by forming an amorphous silicon layer onto a polysilicon layer, to which layers are shaped, forming a cap film composed of an silicon dioxide layer and an silicon nitride layer onto the amorphous silicon layer and changing the polysilicon layer and the amorphous silicon layer into a single crystal through laser scanning. CONSTITUTION:An SiO2 layer 2 is formed onto an Si substrate 1 through thermal oxidation, and a poly Si layer 3 is shaped through a decompression CVD method, and an amorphous Si layer 8 is formed further through the decompression CVD. The Si substrate is thermally treated, a flat SiO2 layer 4 is shaped, and an Si3N4 layer 5 is formed through a plasma CVD method. The poly Si layer 3 and the amorphous Si layer 8 are melted and recrystallized through scanning while partially superposition-applying a laser, thus forming a single crystal layer 9. The Si3N4 layer 5 is removed by using hot phosphoric acid, and the SiO2 layer 4 is gotten rid of by a hydrofluoric acid group treating liquid, thus acquiring the recrystallized Si substrate flat in microscopic inspection.
JP22360187A 1987-09-07 1987-09-07 Manufacture of recrystallized silicon substrate Pending JPS6466928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22360187A JPS6466928A (en) 1987-09-07 1987-09-07 Manufacture of recrystallized silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22360187A JPS6466928A (en) 1987-09-07 1987-09-07 Manufacture of recrystallized silicon substrate

Publications (1)

Publication Number Publication Date
JPS6466928A true JPS6466928A (en) 1989-03-13

Family

ID=16800738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22360187A Pending JPS6466928A (en) 1987-09-07 1987-09-07 Manufacture of recrystallized silicon substrate

Country Status (1)

Country Link
JP (1) JPS6466928A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288412B1 (en) 1994-01-26 2001-09-11 Sanyo Electric Co., Ltd. Thin film transistors for display devices having two polysilicon active layers of different thicknesses
JP2007059601A (en) * 2005-08-24 2007-03-08 Sharp Corp Manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288412B1 (en) 1994-01-26 2001-09-11 Sanyo Electric Co., Ltd. Thin film transistors for display devices having two polysilicon active layers of different thicknesses
JP2007059601A (en) * 2005-08-24 2007-03-08 Sharp Corp Manufacturing method of semiconductor device

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