JPS6465269A - Plasma treatment apparatus - Google Patents

Abstract

PURPOSE:To manufacture a film having superior crystal characteristics on the surface of a substrate with good reproducibility, by introducing microwaves into a reaction space in which a substrate is disposed and impressing a magnetic field in a direction parallel to the direction of the propagation of the microwaves so as to produce high-energy plasma. CONSTITUTION:Microwaves from a microwave generator 4 are introduced from an introducing window 12 via a coaxial cable 7 into a plasma reaction space 1 in a vacuum vessel. On the other hand, the above space 1 is evacuated by means of an exhaust system 9, into which plasma gas and reaction gas are introduced by means of gas systems 10, 11, respectively. Further, a magnetic field is impressed in a direction parallel to the direction of the propagation of the microwaves by means of annular electromagnets 5 and a permanent magnet 6 perpendicular to the above. By the above procedure, high-density plasma is produced in the plasma reaction space 1. Then, a substrate 2 is fitted to a substrate holder 3 having a heater built-in in the above high-density plasma region and heated and held at the prescribed temp. By this method, the film having superior crystal characteristics can be formed on the surface of the substrate 2.