JPS6464323A - Optical gas ashing device - Google Patents

Optical gas ashing device

Info

Publication number
JPS6464323A
JPS6464323A JP22014987A JP22014987A JPS6464323A JP S6464323 A JPS6464323 A JP S6464323A JP 22014987 A JP22014987 A JP 22014987A JP 22014987 A JP22014987 A JP 22014987A JP S6464323 A JPS6464323 A JP S6464323A
Authority
JP
Japan
Prior art keywords
treated
matter
base
chamber
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22014987A
Other languages
Japanese (ja)
Inventor
Kenichi Kawasumi
Akiisa Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22014987A priority Critical patent/JPS6464323A/en
Publication of JPS6464323A publication Critical patent/JPS6464323A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To uniformly surface-treat by supplying reacting gas from a plurality of holes at a time difference to provide relatively similar effect to the fact that the surface to be treated might rotate. CONSTITUTION:A light source 1 is disposed in a lamp housing 15, and a purging gas supply port 10 and a discharge port 11 are provided at the housing 15. A nonrotating base 7 is provided in a treating chamber 16, a heater 8 and a temperature sensor 9 are contained, connected to a power source, a temperature regulator out of the chamber 16 via leads 18, 19, and the base 7 is controlled at its temperature. A matter 6 to be treated is placed on the base 7. The housing 15 and the chamber 16 are partitioned by a plate 5 being light transmissible and having a plurality of nozzles 3 for supplying reaction gas. The nozzles 3 are connected through valves 4 which are electrically opened and closed to a reaction gas supply source via pipes 2. The reaction gas is fed through a narrow gap between the surface of the matter 6 and the plate 5, and discharged from outlets 12, 13 together with the gas reacted and generated on the matter 6 to be treated.
JP22014987A 1987-09-04 1987-09-04 Optical gas ashing device Pending JPS6464323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22014987A JPS6464323A (en) 1987-09-04 1987-09-04 Optical gas ashing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22014987A JPS6464323A (en) 1987-09-04 1987-09-04 Optical gas ashing device

Publications (1)

Publication Number Publication Date
JPS6464323A true JPS6464323A (en) 1989-03-10

Family

ID=16746663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22014987A Pending JPS6464323A (en) 1987-09-04 1987-09-04 Optical gas ashing device

Country Status (1)

Country Link
JP (1) JPS6464323A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0184427U (en) * 1987-11-26 1989-06-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0184427U (en) * 1987-11-26 1989-06-05

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