JPS6462019A - Mos transistor circuit - Google Patents

Mos transistor circuit

Info

Publication number
JPS6462019A
JPS6462019A JP62217860A JP21786087A JPS6462019A JP S6462019 A JPS6462019 A JP S6462019A JP 62217860 A JP62217860 A JP 62217860A JP 21786087 A JP21786087 A JP 21786087A JP S6462019 A JPS6462019 A JP S6462019A
Authority
JP
Japan
Prior art keywords
vin
inverse
noninverting
couple
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62217860A
Other languages
Japanese (ja)
Other versions
JPH0671202B2 (en
Inventor
Masaru Takahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62217860A priority Critical patent/JPH0671202B2/en
Publication of JPS6462019A publication Critical patent/JPS6462019A/en
Publication of JPH0671202B2 publication Critical patent/JPH0671202B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To attain high speed processing and low power consumption with a simple process by using a complementary signal so as to operate a totempole type MOS transistor(TR) thereby preventing a steady-state DC current from being caused between power terminals. CONSTITUTION:The circuit is so configurated that a couple of noninverting input signal Vin and inverting input signal, the inverse of Vin are converted into a couple of noninverting and inverting output signals Vout, the inverse of Vout with a large current drive capability. Since the noninverting/inverting input signals Vin, the inverse of Vin are fed to a gate of driver MOSQ1, MOSQ3 for an inverter and load MOSQ2, MOSQ4, any of the MOS TR is turned off without fail, resulting that no DC current flows substantially between a power potential terminal VDD and ground. Thus, high speed and low power consumption is attained with a simple process.
JP62217860A 1987-09-02 1987-09-02 Liquid crystal drive Expired - Lifetime JPH0671202B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62217860A JPH0671202B2 (en) 1987-09-02 1987-09-02 Liquid crystal drive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217860A JPH0671202B2 (en) 1987-09-02 1987-09-02 Liquid crystal drive

Publications (2)

Publication Number Publication Date
JPS6462019A true JPS6462019A (en) 1989-03-08
JPH0671202B2 JPH0671202B2 (en) 1994-09-07

Family

ID=16710898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62217860A Expired - Lifetime JPH0671202B2 (en) 1987-09-02 1987-09-02 Liquid crystal drive

Country Status (1)

Country Link
JP (1) JPH0671202B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001325798A (en) * 2000-05-16 2001-11-22 Sony Corp Logic circuit and display device using the same
JP2007052431A (en) * 2005-08-16 2007-03-01 Samsung Sdi Co Ltd Emission control driver for organic electroluminescent display device
US7394102B2 (en) 2001-05-29 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, shift register, and display device
JP2010157786A (en) * 2008-12-26 2010-07-15 Sorbus Memory Inc Multi-valued logical driver
JP2012029306A (en) * 2011-08-23 2012-02-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2013068953A (en) * 2012-09-26 2013-04-18 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2014099865A (en) * 2000-06-27 2014-05-29 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic apparatus
JP2014186789A (en) * 2012-02-29 2014-10-02 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2019124945A (en) * 2009-09-16 2019-07-25 株式会社半導体エネルギー研究所 Semiconductor device
JP2020076964A (en) * 2019-09-26 2020-05-21 株式会社半導体エネルギー研究所 Semiconductor device
US10978497B2 (en) 2006-09-29 2021-04-13 Seminconductor Energy Laboratory Co., Ltd. Display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5597092A (en) * 1979-01-12 1980-07-23 Sanyo Electric Co Ltd Electronic circuit
JPS572127A (en) * 1980-06-04 1982-01-07 Fujitsu Ltd Inverter circuit
JPS62146016A (en) * 1985-12-20 1987-06-30 Nec Corp Signal generating circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5597092A (en) * 1979-01-12 1980-07-23 Sanyo Electric Co Ltd Electronic circuit
JPS572127A (en) * 1980-06-04 1982-01-07 Fujitsu Ltd Inverter circuit
JPS62146016A (en) * 1985-12-20 1987-06-30 Nec Corp Signal generating circuit

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001325798A (en) * 2000-05-16 2001-11-22 Sony Corp Logic circuit and display device using the same
JP2014099865A (en) * 2000-06-27 2014-05-29 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic apparatus
JP2009077415A (en) * 2001-05-29 2009-04-09 Semiconductor Energy Lab Co Ltd Display device
US10304399B2 (en) 2001-05-29 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, shift register, and display device
US7394102B2 (en) 2001-05-29 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, shift register, and display device
US9024930B2 (en) 2001-05-29 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, shift register, and display device
US9590632B2 (en) 2001-05-29 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, shift register, and display device
US7733307B2 (en) 2005-08-16 2010-06-08 Samsung Mobile Display Co., Ltd. Emission driver for organic light emitting display device
JP2007052431A (en) * 2005-08-16 2007-03-01 Samsung Sdi Co Ltd Emission control driver for organic electroluminescent display device
US10978497B2 (en) 2006-09-29 2021-04-13 Seminconductor Energy Laboratory Co., Ltd. Display device
JP2010157786A (en) * 2008-12-26 2010-07-15 Sorbus Memory Inc Multi-valued logical driver
US11545105B2 (en) 2009-09-16 2023-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance
US10902814B2 (en) 2009-09-16 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance
US10446103B2 (en) 2009-09-16 2019-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance
JP2019124945A (en) * 2009-09-16 2019-07-25 株式会社半導体エネルギー研究所 Semiconductor device
JP2012029306A (en) * 2011-08-23 2012-02-09 Semiconductor Energy Lab Co Ltd Semiconductor device
US10297332B2 (en) 2012-02-29 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9608010B2 (en) 2012-02-29 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10777290B2 (en) 2012-02-29 2020-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9036766B2 (en) 2012-02-29 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014186789A (en) * 2012-02-29 2014-10-02 Semiconductor Energy Lab Co Ltd Semiconductor device
US11017871B2 (en) 2012-02-29 2021-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11538542B2 (en) 2012-02-29 2022-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11600348B2 (en) 2012-02-29 2023-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013068953A (en) * 2012-09-26 2013-04-18 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2020076964A (en) * 2019-09-26 2020-05-21 株式会社半導体エネルギー研究所 Semiconductor device

Also Published As

Publication number Publication date
JPH0671202B2 (en) 1994-09-07

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