JPS6462019A - Mos transistor circuit - Google Patents
Mos transistor circuitInfo
- Publication number
- JPS6462019A JPS6462019A JP62217860A JP21786087A JPS6462019A JP S6462019 A JPS6462019 A JP S6462019A JP 62217860 A JP62217860 A JP 62217860A JP 21786087 A JP21786087 A JP 21786087A JP S6462019 A JPS6462019 A JP S6462019A
- Authority
- JP
- Japan
- Prior art keywords
- vin
- inverse
- noninverting
- couple
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To attain high speed processing and low power consumption with a simple process by using a complementary signal so as to operate a totempole type MOS transistor(TR) thereby preventing a steady-state DC current from being caused between power terminals. CONSTITUTION:The circuit is so configurated that a couple of noninverting input signal Vin and inverting input signal, the inverse of Vin are converted into a couple of noninverting and inverting output signals Vout, the inverse of Vout with a large current drive capability. Since the noninverting/inverting input signals Vin, the inverse of Vin are fed to a gate of driver MOSQ1, MOSQ3 for an inverter and load MOSQ2, MOSQ4, any of the MOS TR is turned off without fail, resulting that no DC current flows substantially between a power potential terminal VDD and ground. Thus, high speed and low power consumption is attained with a simple process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62217860A JPH0671202B2 (en) | 1987-09-02 | 1987-09-02 | Liquid crystal drive |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62217860A JPH0671202B2 (en) | 1987-09-02 | 1987-09-02 | Liquid crystal drive |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6462019A true JPS6462019A (en) | 1989-03-08 |
JPH0671202B2 JPH0671202B2 (en) | 1994-09-07 |
Family
ID=16710898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62217860A Expired - Lifetime JPH0671202B2 (en) | 1987-09-02 | 1987-09-02 | Liquid crystal drive |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0671202B2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001325798A (en) * | 2000-05-16 | 2001-11-22 | Sony Corp | Logic circuit and display device using the same |
JP2007052431A (en) * | 2005-08-16 | 2007-03-01 | Samsung Sdi Co Ltd | Emission control driver for organic electroluminescent display device |
US7394102B2 (en) | 2001-05-29 | 2008-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register, and display device |
JP2010157786A (en) * | 2008-12-26 | 2010-07-15 | Sorbus Memory Inc | Multi-valued logical driver |
JP2012029306A (en) * | 2011-08-23 | 2012-02-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2013068953A (en) * | 2012-09-26 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2014099865A (en) * | 2000-06-27 | 2014-05-29 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic apparatus |
JP2014186789A (en) * | 2012-02-29 | 2014-10-02 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2019124945A (en) * | 2009-09-16 | 2019-07-25 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2020076964A (en) * | 2019-09-26 | 2020-05-21 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US10978497B2 (en) | 2006-09-29 | 2021-04-13 | Seminconductor Energy Laboratory Co., Ltd. | Display device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5597092A (en) * | 1979-01-12 | 1980-07-23 | Sanyo Electric Co Ltd | Electronic circuit |
JPS572127A (en) * | 1980-06-04 | 1982-01-07 | Fujitsu Ltd | Inverter circuit |
JPS62146016A (en) * | 1985-12-20 | 1987-06-30 | Nec Corp | Signal generating circuit |
-
1987
- 1987-09-02 JP JP62217860A patent/JPH0671202B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5597092A (en) * | 1979-01-12 | 1980-07-23 | Sanyo Electric Co Ltd | Electronic circuit |
JPS572127A (en) * | 1980-06-04 | 1982-01-07 | Fujitsu Ltd | Inverter circuit |
JPS62146016A (en) * | 1985-12-20 | 1987-06-30 | Nec Corp | Signal generating circuit |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001325798A (en) * | 2000-05-16 | 2001-11-22 | Sony Corp | Logic circuit and display device using the same |
JP2014099865A (en) * | 2000-06-27 | 2014-05-29 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic apparatus |
JP2009077415A (en) * | 2001-05-29 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | Display device |
US10304399B2 (en) | 2001-05-29 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register, and display device |
US7394102B2 (en) | 2001-05-29 | 2008-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register, and display device |
US9024930B2 (en) | 2001-05-29 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register, and display device |
US9590632B2 (en) | 2001-05-29 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register, and display device |
US7733307B2 (en) | 2005-08-16 | 2010-06-08 | Samsung Mobile Display Co., Ltd. | Emission driver for organic light emitting display device |
JP2007052431A (en) * | 2005-08-16 | 2007-03-01 | Samsung Sdi Co Ltd | Emission control driver for organic electroluminescent display device |
US10978497B2 (en) | 2006-09-29 | 2021-04-13 | Seminconductor Energy Laboratory Co., Ltd. | Display device |
JP2010157786A (en) * | 2008-12-26 | 2010-07-15 | Sorbus Memory Inc | Multi-valued logical driver |
US11545105B2 (en) | 2009-09-16 | 2023-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic appliance |
US10902814B2 (en) | 2009-09-16 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic appliance |
US10446103B2 (en) | 2009-09-16 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic appliance |
JP2019124945A (en) * | 2009-09-16 | 2019-07-25 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2012029306A (en) * | 2011-08-23 | 2012-02-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US10297332B2 (en) | 2012-02-29 | 2019-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9608010B2 (en) | 2012-02-29 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10777290B2 (en) | 2012-02-29 | 2020-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9036766B2 (en) | 2012-02-29 | 2015-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014186789A (en) * | 2012-02-29 | 2014-10-02 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US11017871B2 (en) | 2012-02-29 | 2021-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11538542B2 (en) | 2012-02-29 | 2022-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11600348B2 (en) | 2012-02-29 | 2023-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013068953A (en) * | 2012-09-26 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2020076964A (en) * | 2019-09-26 | 2020-05-21 | 株式会社半導体エネルギー研究所 | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0671202B2 (en) | 1994-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55136726A (en) | High voltage mos inverter and its drive method | |
JPS5641587A (en) | Cmos sense amplifying circuit | |
JPS6437797A (en) | Eprom device | |
JPS6462019A (en) | Mos transistor circuit | |
JPS6471325A (en) | Bipolar cmos inverter | |
US4801892A (en) | Current mirror circuit | |
JPS56124195A (en) | Dynamic shift register circuit | |
JPS5544284A (en) | Voltage comparison circuit | |
JPS644106A (en) | Buffer circuit | |
JPS54121051A (en) | Complementary mos field effect transistor circuit | |
JPS55163905A (en) | Feedback amplifier | |
JPS57196627A (en) | Electronic circuit device | |
JPS55165030A (en) | Signal transmission circuit of dynamic type | |
JPS54150955A (en) | Voltage converter circuit | |
JPH0735458Y2 (en) | D / A conversion circuit | |
JPS6419417A (en) | Constant voltage source circuit | |
JPS6434016A (en) | Output driver circuit | |
JPS6464597A (en) | Bridge driver circuit | |
JPS5558627A (en) | Logical operation circuit | |
JPS57180213A (en) | Mos type impedance converter | |
JPS5750135A (en) | Inverter circuit | |
JPS57101406A (en) | Mos analog signal amplifying circuit | |
JPS5599661A (en) | Digital output circuit | |
JPS5742215A (en) | Impedance conversion circuit | |
JPS5753152A (en) | Inverter circuit |