JPS6461662A - Manufacture of semiconductor biosensor - Google Patents

Manufacture of semiconductor biosensor

Info

Publication number
JPS6461662A
JPS6461662A JP62216439A JP21643987A JPS6461662A JP S6461662 A JPS6461662 A JP S6461662A JP 62216439 A JP62216439 A JP 62216439A JP 21643987 A JP21643987 A JP 21643987A JP S6461662 A JPS6461662 A JP S6461662A
Authority
JP
Japan
Prior art keywords
enzyme
substrate
immobilized
dissolved
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62216439A
Other languages
Japanese (ja)
Inventor
Fumio Takei
Hiroaki Suzuki
Akio Sugama
Naomi Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62216439A priority Critical patent/JPS6461662A/en
Publication of JPS6461662A publication Critical patent/JPS6461662A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form plural immobilized enzyme films on one wafer efficiently and accurately while precluding the deactivation of enzyme by making only the sensing position surface of a semiconductor detecting element substrate selectively hydrophilic and carrying out the applied immobilization of its enzyme solution. CONSTITUTION:Patterns 2a, 2b, and 2c are formed of negative resists at sensing positions (a), (b), and (c) of a substrate 1 and the exposed part is made hydrophobic with a hydrophobic property providing agent. Here, the resist is separated and the substrate is immersed in the positive resist liquid, which sticks at only the sensing position. Then only 3a is irradiated (F) with ultraviolet rays through a photoresist, the positive resist is dissolved by development, and the substrate is washed, so that drops 4a of water are left. The powder enzyme 5 is scattered there, dissolved in water, and immobilized with a crosslinking agent to form an immobilized enzyme film 5a as shown by (J). Similarly, different enzyme films are formed at the position (b) and (c), thus immobilizing plural enzymes efficiently on one wafer.
JP62216439A 1987-09-01 1987-09-01 Manufacture of semiconductor biosensor Pending JPS6461662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216439A JPS6461662A (en) 1987-09-01 1987-09-01 Manufacture of semiconductor biosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216439A JPS6461662A (en) 1987-09-01 1987-09-01 Manufacture of semiconductor biosensor

Publications (1)

Publication Number Publication Date
JPS6461662A true JPS6461662A (en) 1989-03-08

Family

ID=16688558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216439A Pending JPS6461662A (en) 1987-09-01 1987-09-01 Manufacture of semiconductor biosensor

Country Status (1)

Country Link
JP (1) JPS6461662A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009002839A (en) * 2007-06-22 2009-01-08 Hitachi Ltd Analyzing apparatus
JP2014032209A (en) * 2013-10-18 2014-02-20 Seiko Epson Corp Method for manufacturing sensor element and semiconductor device
WO2017073783A1 (en) * 2015-10-30 2017-05-04 国立大学法人豊橋技術科学大学 Sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009002839A (en) * 2007-06-22 2009-01-08 Hitachi Ltd Analyzing apparatus
JP2014032209A (en) * 2013-10-18 2014-02-20 Seiko Epson Corp Method for manufacturing sensor element and semiconductor device
WO2017073783A1 (en) * 2015-10-30 2017-05-04 国立大学法人豊橋技術科学大学 Sensor

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