JPS6459161A - Semiconductor acceleration sensor and manufacture thereof - Google Patents

Semiconductor acceleration sensor and manufacture thereof

Info

Publication number
JPS6459161A
JPS6459161A JP21762387A JP21762387A JPS6459161A JP S6459161 A JPS6459161 A JP S6459161A JP 21762387 A JP21762387 A JP 21762387A JP 21762387 A JP21762387 A JP 21762387A JP S6459161 A JPS6459161 A JP S6459161A
Authority
JP
Japan
Prior art keywords
section
forming
electrode
gauge resistance
weight section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21762387A
Other languages
Japanese (ja)
Inventor
Hitoshi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP21762387A priority Critical patent/JPS6459161A/en
Publication of JPS6459161A publication Critical patent/JPS6459161A/en
Pending legal-status Critical Current

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  • Pressure Sensors (AREA)

Abstract

PURPOSE:To achieve a higher detection sensitivity and a higher accuracy while facilitating a photolithography process for forming an electrode in a gauge resistance, by forming notches at a weight section of a semiconductor substrate to build up weights of metal therein. CONSTITUTION:A gauge resistance 11 is formed on a semiconductor substrate 7 and an electrode connected thereto is formed by photolithography. Then, a notch 12 is formed as metal storage section and notches 8a, 8b and 8c are done surrounding a weight section 10. Thereafter, an aluminum film 13 is formed on the surface of the notch section 12 and gold 14 is made to grow on the surface of the film 13 by electric plating or the like. This permits the accomplishing of the photolithography process for forming the electrode in the gauge resistance 11 at a cantilever beam section 9 before the formation of a metal material at the weight section 10 to position the center of gravity of the weight section 10 near the axis center of the cantilever section 9, thereby achieving a higher sensitivity and a higher accuracy.
JP21762387A 1987-08-31 1987-08-31 Semiconductor acceleration sensor and manufacture thereof Pending JPS6459161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21762387A JPS6459161A (en) 1987-08-31 1987-08-31 Semiconductor acceleration sensor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21762387A JPS6459161A (en) 1987-08-31 1987-08-31 Semiconductor acceleration sensor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6459161A true JPS6459161A (en) 1989-03-06

Family

ID=16707189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21762387A Pending JPS6459161A (en) 1987-08-31 1987-08-31 Semiconductor acceleration sensor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6459161A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02293669A (en) * 1989-05-08 1990-12-04 Toshiba Corp Semiconductor acceleration sensor
DE19523171A1 (en) * 1994-10-12 1996-04-18 Mitsubishi Electric Corp Semiconductor acceleration sensor esp. for use with air bag of motor vehicle
JP2009276305A (en) * 2008-05-19 2009-11-26 Mitsutoyo Corp Mems acceleration sensor
WO2010061777A1 (en) * 2008-11-25 2010-06-03 パナソニック電工株式会社 Acceleration sensor
JP2010127649A (en) * 2008-11-25 2010-06-10 Panasonic Electric Works Co Ltd Acceleration sensor
JP2011112390A (en) * 2009-11-24 2011-06-09 Panasonic Electric Works Co Ltd Acceleration sensor
JP2011112392A (en) * 2009-11-24 2011-06-09 Panasonic Electric Works Co Ltd Acceleration sensor
WO2011064642A3 (en) * 2009-11-24 2011-07-21 パナソニック電工株式会社 Acceleration sensor

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02293669A (en) * 1989-05-08 1990-12-04 Toshiba Corp Semiconductor acceleration sensor
DE19523171A1 (en) * 1994-10-12 1996-04-18 Mitsubishi Electric Corp Semiconductor acceleration sensor esp. for use with air bag of motor vehicle
DE19523171C2 (en) * 1994-10-12 2000-03-02 Mitsubishi Electric Corp Semiconductor acceleration sensor
JP2009276305A (en) * 2008-05-19 2009-11-26 Mitsutoyo Corp Mems acceleration sensor
US8850889B2 (en) 2008-11-25 2014-10-07 Panasonic Corporation Acceleration sensor
JP2010127649A (en) * 2008-11-25 2010-06-10 Panasonic Electric Works Co Ltd Acceleration sensor
WO2010061777A1 (en) * 2008-11-25 2010-06-03 パナソニック電工株式会社 Acceleration sensor
JP2011112390A (en) * 2009-11-24 2011-06-09 Panasonic Electric Works Co Ltd Acceleration sensor
JP2011112392A (en) * 2009-11-24 2011-06-09 Panasonic Electric Works Co Ltd Acceleration sensor
WO2011064642A3 (en) * 2009-11-24 2011-07-21 パナソニック電工株式会社 Acceleration sensor
CN102667497A (en) * 2009-11-24 2012-09-12 松下电器产业株式会社 Acceleration sensor
EP2506018A2 (en) * 2009-11-24 2012-10-03 Panasonic Corporation Acceleration sensor
EP2506018A4 (en) * 2009-11-24 2013-06-19 Panasonic Corp Acceleration sensor
US9261530B2 (en) 2009-11-24 2016-02-16 Panasonic Intellectual Property Management Co., Ltd. Acceleration sensor
US9702895B2 (en) 2009-11-24 2017-07-11 Panasonic Intellectual Property Management Co., Ltd. Acceleration sensor
US10126322B2 (en) 2009-11-24 2018-11-13 Panasonic Intellectual Property Management Co., Ltd. Acceleration sensor

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