JPS6458509A - Method for cutting semiconductive single crystal ingot - Google Patents
Method for cutting semiconductive single crystal ingotInfo
- Publication number
- JPS6458509A JPS6458509A JP21602987A JP21602987A JPS6458509A JP S6458509 A JPS6458509 A JP S6458509A JP 21602987 A JP21602987 A JP 21602987A JP 21602987 A JP21602987 A JP 21602987A JP S6458509 A JPS6458509 A JP S6458509A
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- ingot
- cut
- wafer
- numeral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
Abstract
PURPOSE:To cut a wafer having good flatness by stable cutting, by cutting the wafer so that a cutting direction becomes the specific direction of the crystal azimuth of an ingot. CONSTITUTION:When a wafer whose cut surface is a (100) surface is cut from a semiconductive single crystal ingot prepared in such a state that a <100> direction is set to a crystal growth direction, both end surfaces are cut and an outer periphery is subsequently ground into a cylindrical shape and, further, orientation flat grinding [Flat surface: (011) surface] is performed. The ingot thus formed is set to Front direction cutting of Tail direction cutting. A numeral 1 shows the ingot, a numeral 2 shows an ingot support stand, a numeral 3 shows an ingot holder part, F is Front and T is Tail. In this case, by cutting the ingot in such a state that the angle formed by a cutting direction and the <001> direction in the cut surface is set to a range of -10-10 deg. or 170-190 deg., the wafer having good flatness can be cut by stable cutting. Even in the cutting of both end surfaces, by setting the angle formed by the cutting direction and the <001> direction in the cut surface to a range of -10-10 deg. or 170-190 deg., stable cutting is made possible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21602987A JPS6458509A (en) | 1987-08-29 | 1987-08-29 | Method for cutting semiconductive single crystal ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21602987A JPS6458509A (en) | 1987-08-29 | 1987-08-29 | Method for cutting semiconductive single crystal ingot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6458509A true JPS6458509A (en) | 1989-03-06 |
Family
ID=16682179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21602987A Pending JPS6458509A (en) | 1987-08-29 | 1987-08-29 | Method for cutting semiconductive single crystal ingot |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6458509A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013258243A (en) * | 2012-06-12 | 2013-12-26 | Sumitomo Electric Ind Ltd | Manufacturing method and manufacturing device of compound semiconductor substrate |
| CN111216258A (en) * | 2020-02-25 | 2020-06-02 | 西北工业大学 | Method for preparing cast single crystal high-temperature alloy seed crystal by cutting |
-
1987
- 1987-08-29 JP JP21602987A patent/JPS6458509A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013258243A (en) * | 2012-06-12 | 2013-12-26 | Sumitomo Electric Ind Ltd | Manufacturing method and manufacturing device of compound semiconductor substrate |
| CN111216258A (en) * | 2020-02-25 | 2020-06-02 | 西北工业大学 | Method for preparing cast single crystal high-temperature alloy seed crystal by cutting |
| CN111216258B (en) * | 2020-02-25 | 2022-04-05 | 西北工业大学 | Method for preparing cast single crystal high-temperature alloy seed crystal by cutting |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU8101987A (en) | Navigation process for vehicles equipped with an electronic compass | |
| EP0276961A3 (en) | Solar battery and process for preparing same | |
| AU8101887A (en) | Navigation process for vehicles equipped with an electronic compass | |
| JPS6458509A (en) | Method for cutting semiconductive single crystal ingot | |
| JPS56105638A (en) | Manufacture of circular gallium arsenide wafer | |
| US5529051A (en) | Method of preparing silicon wafers | |
| EP0630994A4 (en) | Process for vapor-phase diamond synthesis. | |
| AU599727B2 (en) | Navigation process for vehicles equipped with an electronic compass | |
| EP0180430A3 (en) | A process of reducing a wafer size | |
| JPS6478505A (en) | Angle setting device for satellite broadcast antenna system | |
| CA2307584A1 (en) | Charge for vertical boat growth process and use thereof | |
| EP0284434A3 (en) | Method of forming crystals | |
| JPS57129899A (en) | Manufacture of single crystal of 3-5 group compound semiconductor | |
| Lu | Silicon bicrystal growth | |
| AU3625189A (en) | Process for the selective growth of gaas | |
| GB2190400B (en) | Process for growing gaas monocrystal film | |
| EP0320090A3 (en) | Shaping silicon semiconductor wafers | |
| Guilemany et al. | Preparation and Characterization of Single Crystals of Copper Based Shape Memory Alloys | |
| AU5760886A (en) | Monocrystal silicon growth | |
| JPS55131745A (en) | Knife for use in supermicrotome | |
| JPS52138095A (en) | Growth of sapphire single crystal | |
| JPS56164885A (en) | Mirror device for type bar | |
| Park et al. | Sapphire ribbon single crystal by EFG[edge-defined film-fed growth] method | |
| JPS5386158A (en) | Production of semiconductor device | |
| PASSAGLIA et al. | NBS space processing research[Annual Report, 1 Nov. 1974- 31 Dec. 1975] |