JPS6455823A - Detecting method for displacement of positions of mask of wafer - Google Patents

Detecting method for displacement of positions of mask of wafer

Info

Publication number
JPS6455823A
JPS6455823A JP62213372A JP21337287A JPS6455823A JP S6455823 A JPS6455823 A JP S6455823A JP 62213372 A JP62213372 A JP 62213372A JP 21337287 A JP21337287 A JP 21337287A JP S6455823 A JPS6455823 A JP S6455823A
Authority
JP
Japan
Prior art keywords
wafer
mask
grating
positional displacement
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62213372A
Other languages
Japanese (ja)
Inventor
Ryoji Tanaka
Hidekazu Kono
Joji Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62213372A priority Critical patent/JPS6455823A/en
Priority to US07/145,355 priority patent/US4815854A/en
Publication of JPS6455823A publication Critical patent/JPS6455823A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface

Abstract

PURPOSE:To raise a sampling frequency of detecting a positional displacement without influence of the frequency of a vibration mirror by obtaining a positional displacement signal by the difference of signals from two adjacent diffraction gratings. CONSTITUTION:A mask 1 and a wafer 2 are mounted separately at a predetermined gap S, a linear Fresnel zone plate (LFZP) 3 is provided at an equal local distance to the gap S on the mask 1, and first and second diffraction gratings 4, 5 having different pitches are adjacently provided on the wafer 2. The LFZP 3 on the mask 1 is irradiated with a laser beam, a primary reflected diffraction light from the first grating 4 on the wafer 2 is detected by a first detector, a primary reflected diffraction light from the second grating 5 is detected by a second detector, and the difference of the outputs of the first and second detectors is obtained to obtain a positional displacement signal. Since the pitch P2 of the first grating and the pitch P2 of the second grating are altered, primary diffraction angles theta1, theta2 are different to each other, and can be independently detected by the two detectors.
JP62213372A 1987-01-19 1987-08-26 Detecting method for displacement of positions of mask of wafer Pending JPS6455823A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62213372A JPS6455823A (en) 1987-08-26 1987-08-26 Detecting method for displacement of positions of mask of wafer
US07/145,355 US4815854A (en) 1987-01-19 1988-01-19 Method of alignment between mask and semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213372A JPS6455823A (en) 1987-08-26 1987-08-26 Detecting method for displacement of positions of mask of wafer

Publications (1)

Publication Number Publication Date
JPS6455823A true JPS6455823A (en) 1989-03-02

Family

ID=16638095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213372A Pending JPS6455823A (en) 1987-01-19 1987-08-26 Detecting method for displacement of positions of mask of wafer

Country Status (1)

Country Link
JP (1) JPS6455823A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100728483B1 (en) * 2005-03-15 2007-06-13 오므론 가부시키가이샤 Displacement measuring method and displacement sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187333A (en) * 1984-10-04 1986-05-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6236508A (en) * 1985-08-09 1987-02-17 Fujitsu Ltd Method of matching position of mask with position of wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187333A (en) * 1984-10-04 1986-05-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6236508A (en) * 1985-08-09 1987-02-17 Fujitsu Ltd Method of matching position of mask with position of wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100728483B1 (en) * 2005-03-15 2007-06-13 오므론 가부시키가이샤 Displacement measuring method and displacement sensor

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