JPS6455824A - Detecting method for displacement of positions of mask to wafer - Google Patents

Detecting method for displacement of positions of mask to wafer

Info

Publication number
JPS6455824A
JPS6455824A JP62213375A JP21337587A JPS6455824A JP S6455824 A JPS6455824 A JP S6455824A JP 62213375 A JP62213375 A JP 62213375A JP 21337587 A JP21337587 A JP 21337587A JP S6455824 A JPS6455824 A JP S6455824A
Authority
JP
Japan
Prior art keywords
wafer
mask
lfzp
grating
centers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62213375A
Other languages
Japanese (ja)
Other versions
JPH0548929B2 (en
Inventor
Ryoji Tanaka
Hidekazu Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62213375A priority Critical patent/JPS6455824A/en
Priority to US07/145,355 priority patent/US4815854A/en
Publication of JPS6455824A publication Critical patent/JPS6455824A/en
Publication of JPH0548929B2 publication Critical patent/JPH0548929B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To raise a sampling frequency of detecting a positional displacement without influence of the frequency of a vibration mirror by obtaining a positional displacement signal from the difference of signals from two diffraction gratings in which their centers are displaced at a very small distance. CONSTITUTION:A mask 1 and a wafer 2 are mounted separately at a predetermined gap S, a linear Fresnel zone plate(LFZP) 3 is provided at an equal focal distance to the gap S on the mask 1, and first and second diffraction gratings 4, 5 having different pitch lengths of a half of LFZP 3 on the wafer 2 corresponding to the LFZP 3 are aligned in series by displacing the centers at a small distance DELTAD in the direction of an axis (x). The LFZP 3 on the mask 1 is irradiated with a laser beam, a primary reflected diffraction light from the first grating 4 on the wafer 2 is detected by a first detector, a primary reflected diffraction light from the second grating 5 is detected by a second detector, and the difference of the outputs of the first and second detectors is obtained.
JP62213375A 1987-01-19 1987-08-26 Detecting method for displacement of positions of mask to wafer Granted JPS6455824A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62213375A JPS6455824A (en) 1987-08-26 1987-08-26 Detecting method for displacement of positions of mask to wafer
US07/145,355 US4815854A (en) 1987-01-19 1988-01-19 Method of alignment between mask and semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213375A JPS6455824A (en) 1987-08-26 1987-08-26 Detecting method for displacement of positions of mask to wafer

Publications (2)

Publication Number Publication Date
JPS6455824A true JPS6455824A (en) 1989-03-02
JPH0548929B2 JPH0548929B2 (en) 1993-07-22

Family

ID=16638148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213375A Granted JPS6455824A (en) 1987-01-19 1987-08-26 Detecting method for displacement of positions of mask to wafer

Country Status (1)

Country Link
JP (1) JPS6455824A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187333A (en) * 1984-10-04 1986-05-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6236508A (en) * 1985-08-09 1987-02-17 Fujitsu Ltd Method of matching position of mask with position of wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187333A (en) * 1984-10-04 1986-05-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6236508A (en) * 1985-08-09 1987-02-17 Fujitsu Ltd Method of matching position of mask with position of wafer

Also Published As

Publication number Publication date
JPH0548929B2 (en) 1993-07-22

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