JPS6455801A - Metal oxide film resistor - Google Patents

Metal oxide film resistor

Info

Publication number
JPS6455801A
JPS6455801A JP62213332A JP21333287A JPS6455801A JP S6455801 A JPS6455801 A JP S6455801A JP 62213332 A JP62213332 A JP 62213332A JP 21333287 A JP21333287 A JP 21333287A JP S6455801 A JPS6455801 A JP S6455801A
Authority
JP
Japan
Prior art keywords
film
base
metal oxide
oxide film
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62213332A
Other languages
Japanese (ja)
Inventor
Mitsuaki Kato
Kazuyuki Oshima
Atsuo Ito
Kikuji Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP62213332A priority Critical patent/JPS6455801A/en
Publication of JPS6455801A publication Critical patent/JPS6455801A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce the resistance temperature coefficient of a metal oxide film resistor by including tin oxide and fluorine in a metal oxide film. CONSTITUTION:When a metal oxide film is formed on an insulating base, a porcelain base made of mullite corundum in which the film contains approx. 70% of alumina content including tin oxide and fluorine is cleaned, and then dried. Thereafter, 1250g of aqueous solution containing 60% of tin chloride, 2500g of pure water, 10.7g of ammonium fluoride (NH3F) and 100g of alcohol are, for example, mixed so that the ratio of the fluorine to the tin in the film becomes 0.1-4.0%, and film growing material base solution is prepared. Subsequently, a film bonding furnace is employed, the base is contained in a cage, and the base solution and compressed air are injected from a nozzle while the cage is being rotated by holding the temperature in the furnace at 600 deg.C to bond the film on the base. Then, it is annealed at 300 deg.C in another furnace.
JP62213332A 1987-08-26 1987-08-26 Metal oxide film resistor Pending JPS6455801A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62213332A JPS6455801A (en) 1987-08-26 1987-08-26 Metal oxide film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213332A JPS6455801A (en) 1987-08-26 1987-08-26 Metal oxide film resistor

Publications (1)

Publication Number Publication Date
JPS6455801A true JPS6455801A (en) 1989-03-02

Family

ID=16637402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213332A Pending JPS6455801A (en) 1987-08-26 1987-08-26 Metal oxide film resistor

Country Status (1)

Country Link
JP (1) JPS6455801A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016110481B4 (en) 2015-07-13 2023-07-06 Toyota Jidosha Kabushiki Kaisha Method of manufacturing an electrode sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016110481B4 (en) 2015-07-13 2023-07-06 Toyota Jidosha Kabushiki Kaisha Method of manufacturing an electrode sheet

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