JPS6452695A - Synthesis of crystal by vapor growth - Google Patents

Synthesis of crystal by vapor growth

Info

Publication number
JPS6452695A
JPS6452695A JP21223587A JP21223587A JPS6452695A JP S6452695 A JPS6452695 A JP S6452695A JP 21223587 A JP21223587 A JP 21223587A JP 21223587 A JP21223587 A JP 21223587A JP S6452695 A JPS6452695 A JP S6452695A
Authority
JP
Japan
Prior art keywords
crystal
spherical surface
concave spherical
dome
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21223587A
Other languages
Japanese (ja)
Inventor
Motoharu Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP21223587A priority Critical patent/JPS6452695A/en
Publication of JPS6452695A publication Critical patent/JPS6452695A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent crack development on the dome-shaped crystal region during the titled synthesis so as to form said dome-shaped crystal on the concave spherical surface areas, by making the temperature on the substrate parts between adjacent concave spherical surface areas lower than that at each concave spherical surface area. CONSTITUTION:A feedstock gas fed through nozzles 3 and 4 is allowed to flow on a substrate 1 with a plural of concave spherical surface regions 2 present at intervals to form crystal through vapor growth process. During said process, the temperature at substrate parts between adjacent concave spherical surface areas 2 is made lower than that of the concave spherical surface areas 2. On the substrate parts where the temperature is lower, slower crystal formation rate will result in crystal thinner than that at the areas higher in the temperature. Thus, the flat plate-shaped crystal on the substrate will become thinner than those on the dome-shaped regions. Therefore, when cooled after the crystal synthesis completion, the thinner parts of the crystal are cracked, releasing the stress developed by the cooling; thus, no crack will develop on the dome- shaped crystal regions 5.
JP21223587A 1987-08-25 1987-08-25 Synthesis of crystal by vapor growth Pending JPS6452695A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21223587A JPS6452695A (en) 1987-08-25 1987-08-25 Synthesis of crystal by vapor growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21223587A JPS6452695A (en) 1987-08-25 1987-08-25 Synthesis of crystal by vapor growth

Publications (1)

Publication Number Publication Date
JPS6452695A true JPS6452695A (en) 1989-02-28

Family

ID=16619200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21223587A Pending JPS6452695A (en) 1987-08-25 1987-08-25 Synthesis of crystal by vapor growth

Country Status (1)

Country Link
JP (1) JPS6452695A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04224681A (en) * 1990-03-16 1992-08-13 Carl Zeiss:Fa Plasma cvd method for forming dielectric and/or metal coating system on internal surface and/or external surface of almost dome-shaped substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04224681A (en) * 1990-03-16 1992-08-13 Carl Zeiss:Fa Plasma cvd method for forming dielectric and/or metal coating system on internal surface and/or external surface of almost dome-shaped substrate

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