JPS6451390A - Method for controlling single crystal pulling up device - Google Patents
Method for controlling single crystal pulling up deviceInfo
- Publication number
- JPS6451390A JPS6451390A JP20427587A JP20427587A JPS6451390A JP S6451390 A JPS6451390 A JP S6451390A JP 20427587 A JP20427587 A JP 20427587A JP 20427587 A JP20427587 A JP 20427587A JP S6451390 A JPS6451390 A JP S6451390A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- work coil
- grown
- converter
- arithmetic unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To grow a long and large crystal having less lattice defects with good reproducibility by automatically controlling a work coil in accordance with the growth of a crystal in the title device by the Czochralski method. CONSTITUTION:The raw material of lithium tantalate is charged in an Ir crucible 1, and heated by the high-frequency heating work coil 2. A seed crystal 4 is fixed to the lower end of a lifting rod 3, the diameter of the crystal to be grown is set in a personal computer 8 by using a key board 7, and operation is started. The weight of the crystal to be grown is detected by a load cell 5, and the current is controlled by a current controller 10 of the work coil 2 based on the calculation by the arithmetic unit 8 through an A/D converter 6. The detection signal of the crucible bottom temp. from a thermocouple 12 is calculated by the arithmetic unit 8 through an A/D converter 13, a work coil moving device 11 is operated, and the work coil 2 is moved to an appropriate position (with the single crystal growth point as the focal point).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20427587A JPS6451390A (en) | 1987-08-19 | 1987-08-19 | Method for controlling single crystal pulling up device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20427587A JPS6451390A (en) | 1987-08-19 | 1987-08-19 | Method for controlling single crystal pulling up device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6451390A true JPS6451390A (en) | 1989-02-27 |
Family
ID=16487781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20427587A Pending JPS6451390A (en) | 1987-08-19 | 1987-08-19 | Method for controlling single crystal pulling up device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6451390A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0768392A2 (en) * | 1995-10-11 | 1997-04-16 | International Superconductivity Technology Center | Crystal manufacturing apparatus |
JP2017186188A (en) * | 2016-04-04 | 2017-10-12 | 住友金属鉱山株式会社 | Production method and apparatus of single crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5435878A (en) * | 1977-08-26 | 1979-03-16 | Agency Of Ind Science & Technol | Single crystal growth method |
JPS58145694A (en) * | 1982-02-22 | 1983-08-30 | Toshiba Corp | Production of compound semiconductor |
-
1987
- 1987-08-19 JP JP20427587A patent/JPS6451390A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5435878A (en) * | 1977-08-26 | 1979-03-16 | Agency Of Ind Science & Technol | Single crystal growth method |
JPS58145694A (en) * | 1982-02-22 | 1983-08-30 | Toshiba Corp | Production of compound semiconductor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0768392A2 (en) * | 1995-10-11 | 1997-04-16 | International Superconductivity Technology Center | Crystal manufacturing apparatus |
EP0768392A3 (en) * | 1995-10-11 | 1998-04-01 | International Superconductivity Technology Center | Crystal manufacturing apparatus |
JP2017186188A (en) * | 2016-04-04 | 2017-10-12 | 住友金属鉱山株式会社 | Production method and apparatus of single crystal |
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