JPS6451390A - Method for controlling single crystal pulling up device - Google Patents

Method for controlling single crystal pulling up device

Info

Publication number
JPS6451390A
JPS6451390A JP20427587A JP20427587A JPS6451390A JP S6451390 A JPS6451390 A JP S6451390A JP 20427587 A JP20427587 A JP 20427587A JP 20427587 A JP20427587 A JP 20427587A JP S6451390 A JPS6451390 A JP S6451390A
Authority
JP
Japan
Prior art keywords
crystal
work coil
grown
converter
arithmetic unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20427587A
Other languages
Japanese (ja)
Inventor
Katsuyuki Asaumi
Hiroshi Machida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiheiyo Cement Corp
Original Assignee
Chichibu Cement Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chichibu Cement Co Ltd filed Critical Chichibu Cement Co Ltd
Priority to JP20427587A priority Critical patent/JPS6451390A/en
Publication of JPS6451390A publication Critical patent/JPS6451390A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To grow a long and large crystal having less lattice defects with good reproducibility by automatically controlling a work coil in accordance with the growth of a crystal in the title device by the Czochralski method. CONSTITUTION:The raw material of lithium tantalate is charged in an Ir crucible 1, and heated by the high-frequency heating work coil 2. A seed crystal 4 is fixed to the lower end of a lifting rod 3, the diameter of the crystal to be grown is set in a personal computer 8 by using a key board 7, and operation is started. The weight of the crystal to be grown is detected by a load cell 5, and the current is controlled by a current controller 10 of the work coil 2 based on the calculation by the arithmetic unit 8 through an A/D converter 6. The detection signal of the crucible bottom temp. from a thermocouple 12 is calculated by the arithmetic unit 8 through an A/D converter 13, a work coil moving device 11 is operated, and the work coil 2 is moved to an appropriate position (with the single crystal growth point as the focal point).
JP20427587A 1987-08-19 1987-08-19 Method for controlling single crystal pulling up device Pending JPS6451390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20427587A JPS6451390A (en) 1987-08-19 1987-08-19 Method for controlling single crystal pulling up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20427587A JPS6451390A (en) 1987-08-19 1987-08-19 Method for controlling single crystal pulling up device

Publications (1)

Publication Number Publication Date
JPS6451390A true JPS6451390A (en) 1989-02-27

Family

ID=16487781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20427587A Pending JPS6451390A (en) 1987-08-19 1987-08-19 Method for controlling single crystal pulling up device

Country Status (1)

Country Link
JP (1) JPS6451390A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0768392A2 (en) * 1995-10-11 1997-04-16 International Superconductivity Technology Center Crystal manufacturing apparatus
JP2017186188A (en) * 2016-04-04 2017-10-12 住友金属鉱山株式会社 Production method and apparatus of single crystal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435878A (en) * 1977-08-26 1979-03-16 Agency Of Ind Science & Technol Single crystal growth method
JPS58145694A (en) * 1982-02-22 1983-08-30 Toshiba Corp Production of compound semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435878A (en) * 1977-08-26 1979-03-16 Agency Of Ind Science & Technol Single crystal growth method
JPS58145694A (en) * 1982-02-22 1983-08-30 Toshiba Corp Production of compound semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0768392A2 (en) * 1995-10-11 1997-04-16 International Superconductivity Technology Center Crystal manufacturing apparatus
EP0768392A3 (en) * 1995-10-11 1998-04-01 International Superconductivity Technology Center Crystal manufacturing apparatus
JP2017186188A (en) * 2016-04-04 2017-10-12 住友金属鉱山株式会社 Production method and apparatus of single crystal

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