JPS6450525A - Heat treatment of iii-v semiconductor substrate - Google Patents
Heat treatment of iii-v semiconductor substrateInfo
- Publication number
- JPS6450525A JPS6450525A JP20871487A JP20871487A JPS6450525A JP S6450525 A JPS6450525 A JP S6450525A JP 20871487 A JP20871487 A JP 20871487A JP 20871487 A JP20871487 A JP 20871487A JP S6450525 A JPS6450525 A JP S6450525A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- iii
- periphery
- heat treatment
- inch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE:To enable a highly uniform and short-time heat treatment of a III-V semiconductor substrate having a large diameter, by mounting the substrate and a guard ring made of an infrared-ray absorber disposed on the periphery of the substrate on a substrate supporting plate made of transparent quartz glass with a mirror-polished flat surface, and heat treating it. CONSTITUTION:A III-V semiconductor substrate 4 and a guard ring 2 made of an infrared ray absorber disposed on the periphery of the substrate are mounted on a substrate supporting plate 5 made of quartz glass mirror-polished in a flat surface above and below, and heat treated. For example, a GaAs substrate 4 in which 5X10<12>cm<-2> of Si<+> is implanted into a semi-insulating 2-inch GaAs substrate having a plane orientation <100> is heat treated at 950 deg.C for 5 sec of conditions in a state that the periphery of a GaAs substrate 4 is surrounded by a guard ring 2. The short time heat treatment is conducted in an N2 gas or Ar gas atmosphere, and a tungsten halogen lamp is employed as a heat source. The ring 2 employs a 3-inch Si substrate in which a 2-inch diameter hole is opened at the center.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20871487A JPS6450525A (en) | 1987-08-21 | 1987-08-21 | Heat treatment of iii-v semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20871487A JPS6450525A (en) | 1987-08-21 | 1987-08-21 | Heat treatment of iii-v semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450525A true JPS6450525A (en) | 1989-02-27 |
Family
ID=16560868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20871487A Pending JPS6450525A (en) | 1987-08-21 | 1987-08-21 | Heat treatment of iii-v semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450525A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277119A (en) * | 1988-06-27 | 1990-03-16 | Tokyo Electron Ltd | Heat treatment |
-
1987
- 1987-08-21 JP JP20871487A patent/JPS6450525A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277119A (en) * | 1988-06-27 | 1990-03-16 | Tokyo Electron Ltd | Heat treatment |
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