JPS6448430A - Forming method of modified layer - Google Patents
Forming method of modified layerInfo
- Publication number
- JPS6448430A JPS6448430A JP20583787A JP20583787A JPS6448430A JP S6448430 A JPS6448430 A JP S6448430A JP 20583787 A JP20583787 A JP 20583787A JP 20583787 A JP20583787 A JP 20583787A JP S6448430 A JPS6448430 A JP S6448430A
- Authority
- JP
- Japan
- Prior art keywords
- modified layer
- silicon
- section
- silicon oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To enable the novel forming method of a modified layer in structure for an silicon semiconductor device by utilizing a fact that the thickness of the modified layer shaped by nitriding is thickened in silicon oxide and thinned in silicon. CONSTITUTION:A surface on the side, on which at least an silicon oxide film 12 is shaped, in a blank, in which a desired two-dimensional pattern is formed to a relief shaped by the presence of the silicon oxide film 12 on a base body 10, is nitrided, and a modified layer 15 is shaped to the section of the silicon oxide film 12 and the section of an silicon surface in the base body 10. The thin modified layer 15 in the silicon surface section is gotten rid of by utilizing a fact that the thickness of the modified layer 15 is thickened in the section of the silicon oxide film 12 and thinned in the silicon surface section, but a removal process for the modified layer 15 is executed under conditions in which the thick modified layer 15 in the section of the silicon oxide film 12 is left. Thereby, the forming method of the novel modified layer capable of improving yield on the formation of a semiconductor device is acquired.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62205837A JP2558289B2 (en) | 1987-08-19 | 1987-08-19 | Method of forming altered layer |
| US07/233,585 US4900396A (en) | 1987-08-19 | 1988-08-18 | Method of forming modified layer and pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62205837A JP2558289B2 (en) | 1987-08-19 | 1987-08-19 | Method of forming altered layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6448430A true JPS6448430A (en) | 1989-02-22 |
| JP2558289B2 JP2558289B2 (en) | 1996-11-27 |
Family
ID=16513533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62205837A Expired - Lifetime JP2558289B2 (en) | 1987-08-19 | 1987-08-19 | Method of forming altered layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2558289B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100701016B1 (en) * | 2000-09-27 | 2007-03-29 | 삼성전자주식회사 | Liquid crystal display device |
-
1987
- 1987-08-19 JP JP62205837A patent/JP2558289B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100701016B1 (en) * | 2000-09-27 | 2007-03-29 | 삼성전자주식회사 | Liquid crystal display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2558289B2 (en) | 1996-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |