JPS644664B2 - - Google Patents
Info
- Publication number
- JPS644664B2 JPS644664B2 JP56134925A JP13492581A JPS644664B2 JP S644664 B2 JPS644664 B2 JP S644664B2 JP 56134925 A JP56134925 A JP 56134925A JP 13492581 A JP13492581 A JP 13492581A JP S644664 B2 JPS644664 B2 JP S644664B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- insulating
- layer
- semiconductor device
- layered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56134925A JPS5835925A (ja) | 1981-08-28 | 1981-08-28 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56134925A JPS5835925A (ja) | 1981-08-28 | 1981-08-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5835925A JPS5835925A (ja) | 1983-03-02 |
| JPS644664B2 true JPS644664B2 (enExample) | 1989-01-26 |
Family
ID=15139742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56134925A Granted JPS5835925A (ja) | 1981-08-28 | 1981-08-28 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5835925A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03169667A (ja) * | 1989-11-30 | 1991-07-23 | Mita Ind Co Ltd | インクリボンの巻取制御装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49107177A (enExample) * | 1973-02-13 | 1974-10-11 | ||
| JPS55133556A (en) * | 1979-04-03 | 1980-10-17 | Matsushita Electronics Corp | Planar semiconductor device and method of fabricating the same |
-
1981
- 1981-08-28 JP JP56134925A patent/JPS5835925A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03169667A (ja) * | 1989-11-30 | 1991-07-23 | Mita Ind Co Ltd | インクリボンの巻取制御装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5835925A (ja) | 1983-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1070016A (en) | Semiconductor floating gate storage device | |
| JP2743391B2 (ja) | 半導体メモリの製造方法 | |
| KR890013777A (ko) | 반도체 집적회로장치 및 그 제조방법 | |
| US4513304A (en) | Semiconductor memory device and process for producing the same | |
| EP0519741A2 (en) | High-breakdown-voltage semiconductor element | |
| KR930024165A (ko) | 반도체 장치 및 그 제조 방법 | |
| JPS644664B2 (enExample) | ||
| US3579278A (en) | Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor | |
| JP2712098B2 (ja) | 半導体装置 | |
| JPS59161861A (ja) | 半導体装置 | |
| JPS60206040A (ja) | 半導体集積回路絶縁分離装置 | |
| JPS60236260A (ja) | 半導体記憶装置 | |
| JPS5978561A (ja) | 半導体記憶装置 | |
| JPS6110271A (ja) | 半導体装置 | |
| JP2705146B2 (ja) | Mos型半導体装置 | |
| JPH0195525A (ja) | 半導体素子 | |
| JPH0650765B2 (ja) | 半導体装置の製造方法 | |
| JPH0695531B2 (ja) | 電界効果型トランジスタ | |
| JPS6410663A (en) | Semiconductor device | |
| JPS61187357A (ja) | 半導体装置 | |
| JPS62183177A (ja) | 半導体装置 | |
| JPS5834946B2 (ja) | 半導体記憶装置 | |
| JPH0555511A (ja) | 半導体記憶装置 | |
| JPS5863177A (ja) | 半導体装置 | |
| JPS63151073A (ja) | 半導体装置 |