JPS6445766U - - Google Patents

Info

Publication number
JPS6445766U
JPS6445766U JP14123587U JP14123587U JPS6445766U JP S6445766 U JPS6445766 U JP S6445766U JP 14123587 U JP14123587 U JP 14123587U JP 14123587 U JP14123587 U JP 14123587U JP S6445766 U JPS6445766 U JP S6445766U
Authority
JP
Japan
Prior art keywords
substrate
heat sink
reaction tube
crystal
welded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14123587U
Other languages
Japanese (ja)
Other versions
JPH0519340Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14123587U priority Critical patent/JPH0519340Y2/ja
Publication of JPS6445766U publication Critical patent/JPS6445766U/ja
Application granted granted Critical
Publication of JPH0519340Y2 publication Critical patent/JPH0519340Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図及び第２図は本考案に関するもので、第
１図は成長装置の断面図、第２図は基板結晶周囲
の斜視図、第３図は従来の成長装置の断面図であ
る。 符号の説明、１……成長反応管、２……きざみ
部、３……ヒートシンク、４……基板結晶、５…
…基板止め、７……空間、９……溶液。 FIGS. 1 and 2 relate to the present invention; FIG. 1 is a sectional view of a growth apparatus, FIG. 2 is a perspective view of the periphery of a substrate crystal, and FIG. 3 is a sectional view of a conventional growth apparatus. Explanation of symbols, 1...Growth reaction tube, 2...Notch portion, 3...Heat sink, 4...Substrate crystal, 5...
...Substrate stop, 7...Space, 9...Solution.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 上端部にきざみ部を設けた熱膨張係数の大きい
棒状ヒートシンクを、一方端を閉じた成長反応管
の下方に一定空間を設けた態様で収納し、該きざ
み部位置の成長反応管の溶着部を溶着し、該ヒー
トシンクの上面に接触させて基板結晶を配置する
とともに、該基板結晶を基板止めで固定し、かつ
該基板止めの上部位置の成長反応管の基板止め溶
着部を溶着して基板結晶を固定し、密封したこと
を特徴としてなる半導体結晶の結晶成長装置。 A rod-shaped heat sink with a large coefficient of thermal expansion with a notched portion at its upper end is housed with a certain space provided below a growth reaction tube with one end closed, and the welded portion of the growth reaction tube at the notched portion is closed. The substrate crystal is placed in contact with the upper surface of the heat sink, the substrate crystal is fixed with a substrate stopper, and the substrate stopper welded part of the growth reaction tube located above the substrate stopper is welded to place the substrate crystal in contact with the upper surface of the heat sink. A semiconductor crystal growth device characterized by fixed and sealed semiconductor crystals.
JP14123587U 1987-09-16 1987-09-16 Expired - Lifetime JPH0519340Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14123587U JPH0519340Y2 (en) 1987-09-16 1987-09-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14123587U JPH0519340Y2 (en) 1987-09-16 1987-09-16

Publications (2)

Publication Number Publication Date
JPS6445766U true JPS6445766U (en) 1989-03-20
JPH0519340Y2 JPH0519340Y2 (en) 1993-05-21

Family

ID=31406129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14123587U Expired - Lifetime JPH0519340Y2 (en) 1987-09-16 1987-09-16

Country Status (1)

Country Link
JP (1) JPH0519340Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194922A (en) * 1989-12-22 1991-08-26 Stanley Electric Co Ltd Device for crystal-growing ii-vi compound semiconductor
JP2012101114A (en) * 2005-09-12 2012-05-31 Rtc Industries Inc Product management display system with trackless pusher mechanism

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194922A (en) * 1989-12-22 1991-08-26 Stanley Electric Co Ltd Device for crystal-growing ii-vi compound semiconductor
JP2012101114A (en) * 2005-09-12 2012-05-31 Rtc Industries Inc Product management display system with trackless pusher mechanism

Also Published As

Publication number Publication date
JPH0519340Y2 (en) 1993-05-21

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