JPS6445044A - Process of ion implantation - Google Patents
Process of ion implantationInfo
- Publication number
- JPS6445044A JPS6445044A JP62200001A JP20000187A JPS6445044A JP S6445044 A JPS6445044 A JP S6445044A JP 62200001 A JP62200001 A JP 62200001A JP 20000187 A JP20000187 A JP 20000187A JP S6445044 A JPS6445044 A JP S6445044A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- alloy
- arsenic
- boron
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 4
- 239000000956 alloy Substances 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 3
- 229910001325 element alloy Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE:To subject the surface of a base to ion implantation of boron and/or arsenic with high ionic current density for a long period by using an emitter made of a 4-element alloy consisting of platinum, silicon, arsenic and boron, and of a specific alloy. CONSTITUTION:Ion implantation is carried out by heating a 4-element alloy, for instance, an eutectic crystal alloy of Pt-Si-As-B [Pt:Si:As:B=4:4:1:1 (atomic ratio)] at 1000 deg.C inside a quartz tube, then applying furnance annealing thereon, and placing it on a heater unit 2 for heating it up to 800 deg.C by means of the heater 2 before impressing high potential of 1V/Angstrom on the tip of an emitter 1. The material used in the emitter 1 and heater 2 should be wire made of an alloy consisting of 75 atomic %W and 25 atomic %Re. According to this process, boron and/or arsenic can be selectively implanted into minute regions with high ionic current density, resulting in very slight qualitative deterioration of the emitter 1 because of its material quality as a specific alloy.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200001A JPS6445044A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
| US07/227,255 US4892752A (en) | 1987-08-12 | 1988-08-02 | Method of ion implantation |
| EP88307442A EP0303486B1 (en) | 1987-08-12 | 1988-08-11 | Method of ion implantation |
| DE3855897T DE3855897T2 (en) | 1987-08-12 | 1988-08-11 | Ion implantation method |
| KR1019880010320A KR920005348B1 (en) | 1987-08-12 | 1988-08-12 | Ion implantation method |
| US07/371,976 US4946706A (en) | 1987-08-12 | 1989-06-27 | Method of ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200001A JPS6445044A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6445044A true JPS6445044A (en) | 1989-02-17 |
| JPH0555968B2 JPH0555968B2 (en) | 1993-08-18 |
Family
ID=16417144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62200001A Granted JPS6445044A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6445044A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722730U (en) * | 1993-10-07 | 1995-04-25 | 源重 加藤 | Tray for handicapped people |
-
1987
- 1987-08-12 JP JP62200001A patent/JPS6445044A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0555968B2 (en) | 1993-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |