JPS6444660U - - Google Patents
Info
- Publication number
- JPS6444660U JPS6444660U JP13768187U JP13768187U JPS6444660U JP S6444660 U JPS6444660 U JP S6444660U JP 13768187 U JP13768187 U JP 13768187U JP 13768187 U JP13768187 U JP 13768187U JP S6444660 U JPS6444660 U JP S6444660U
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor laser
- oscillation region
- laser device
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims 3
Description
第１図は本考案の一実施例を示す斜視図、第２
図は第１図に示す装置の側面図、第３図は本考案
の他の実施例を示す斜視図、第４図は第３図に示
す装置の溝部で切断した縦断面図である。第５図
は従来の半導体レーザ装置を示す側面図である。
１……レーザチツプ、２……ヒートシンク、２
２……面取部、２３，２３′……溝。
Fig. 1 is a perspective view showing one embodiment of the present invention;
The figures are a side view of the device shown in FIG. 1, FIG. 3 is a perspective view showing another embodiment of the present invention, and FIG. 4 is a longitudinal cross-sectional view of the device shown in FIG. 3, taken along a groove. FIG. 5 is a side view showing a conventional semiconductor laser device. 1...Laser chip, 2...Heat sink, 2
2... Chamfered portion, 23, 23'... Groove.
Claims (1)
レーザチツプと、このレーザチツプが固着される
固着面を備えたヒートシンクとで構成された半導
体レーザ装置において、上記ヒートシンクの固着
面上には、少なくとも上記発振領域の直下近傍か
らレーザ光の出射方向に延在する溝を備え、この
溝は、上記発振領域より大きく上記共振器端面よ
り小さい幅に形成され、且つレーザ光が上記ヒー
トシンクに触れることなく通過できる深さに形成
されていることを特徴とする半導体レーザ装置。 In a semiconductor laser device comprising a laser chip that emits laser light from an oscillation region on a resonator end face, and a heat sink having a fixing surface to which the laser chip is fixed, at least the oscillation region is attached to the fixing surface of the heat sink. The groove is formed to have a width larger than the oscillation region and smaller than the end face of the resonator, and has a depth that allows the laser light to pass through without touching the heat sink. 1. A semiconductor laser device characterized in that the semiconductor laser device is formed in a straight line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13768187U JPS6444660U (en) | 1987-09-09 | 1987-09-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13768187U JPS6444660U (en) | 1987-09-09 | 1987-09-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6444660U true JPS6444660U (en) | 1989-03-16 |
Family
ID=31399324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13768187U Pending JPS6444660U (en) | 1987-09-09 | 1987-09-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6444660U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367276B2 (en) * | 1984-07-02 | 1988-12-23 | Fujitsu Ltd |
-
1987
- 1987-09-09 JP JP13768187U patent/JPS6444660U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367276B2 (en) * | 1984-07-02 | 1988-12-23 | Fujitsu Ltd |