JPS6172871U - - Google Patents
Info
- Publication number
- JPS6172871U JPS6172871U JP15684184U JP15684184U JPS6172871U JP S6172871 U JPS6172871 U JP S6172871U JP 15684184 U JP15684184 U JP 15684184U JP 15684184 U JP15684184 U JP 15684184U JP S6172871 U JPS6172871 U JP S6172871U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser chip
- package
- monitoring
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 description 1
Description
第１図及び第２図Ａ，Ｂは本考案半導体レーザ
装置の実施の一例を説明するためのもので、第１
図は装置全体を示す分解斜視図、第２図Ａは要部
平面図、同図Ｂは同図ＡのＢ−Ｂ線に沿う断面図
、第３図Ａ，Ｂは本考案半導体レーザ装置の各別
の変形例を示す要部平面図、第４図は本考案半導
体レーザ装置の別の実施例の要部を示す斜視図、
第５図は本考案半導体レーザ装置の更に別の実施
例の要部を示す平面図、第６図は従来例を示す断
面図である。
符号の説明、１，１９……パツケージ、６……
半導体レーザチツプ、１３，１３ａ……レーザダ
イオード形成領域、１４……モニター用フオトダ
イオード、１６，１……反射手段。
FIG. 1 and FIGS. 2A and 2B are for explaining an example of implementation of the semiconductor laser device of the present invention.
The figure is an exploded perspective view showing the entire device, FIG. 2A is a plan view of the main part, FIG. 2B is a cross-sectional view taken along line B-B in FIG. FIG. 4 is a perspective view showing the main parts of another embodiment of the semiconductor laser device of the present invention;
FIG. 5 is a plan view showing a main part of still another embodiment of the semiconductor laser device of the present invention, and FIG. 6 is a sectional view showing a conventional example. Explanation of symbols, 1, 19...Package, 6...
Semiconductor laser chip, 13, 13a... Laser diode formation region, 14... Monitoring photodiode, 16, 1... Reflection means.
Claims (1)
半導体レーザ装置において、上記半導体レーザチ
ツプのレーザダイオードが形成されていない領域
内にモニター用フオトダイオードを形成し、上記
パツケージ内の半導体レーザチツプ収納部近傍に
上記半導体レーザチツプのレーザダイオード形成
領域から投射されたモニター用レーザ光を上記モ
ニター用フオトダイオードへ反射する反射手段を
存在せしめてなることを特徴とする半導体レーザ
装置。 In a semiconductor laser device in which a semiconductor laser chip is housed in a package, a monitoring photodiode is formed in a region of the semiconductor laser chip where no laser diode is formed, and the laser of the semiconductor laser chip is placed near the semiconductor laser chip storage area in the package. 1. A semiconductor laser device comprising a reflecting means for reflecting a monitoring laser beam projected from a diode forming region onto the monitoring photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15684184U JPS6172871U (en) | 1984-10-17 | 1984-10-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15684184U JPS6172871U (en) | 1984-10-17 | 1984-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6172871U true JPS6172871U (en) | 1986-05-17 |
Family
ID=30714847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15684184U Pending JPS6172871U (en) | 1984-10-17 | 1984-10-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6172871U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017139416A (en) * | 2016-02-05 | 2017-08-10 | 三菱電機株式会社 | Optical module |
-
1984
- 1984-10-17 JP JP15684184U patent/JPS6172871U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017139416A (en) * | 2016-02-05 | 2017-08-10 | 三菱電機株式会社 | Optical module |