JPS6444120A - Solid-state relay - Google Patents

Solid-state relay

Info

Publication number
JPS6444120A
JPS6444120A JP62200388A JP20038887A JPS6444120A JP S6444120 A JPS6444120 A JP S6444120A JP 62200388 A JP62200388 A JP 62200388A JP 20038887 A JP20038887 A JP 20038887A JP S6444120 A JPS6444120 A JP S6444120A
Authority
JP
Japan
Prior art keywords
mosfet
input signal
photodetection
voltage
pvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62200388A
Other languages
Japanese (ja)
Inventor
Katsumi Kawashima
Yutaka Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP62200388A priority Critical patent/JPS6444120A/en
Publication of JPS6444120A publication Critical patent/JPS6444120A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To decrease heating by adopting an enhancement MOSFET for an output MOSFET and using a backup battery so as to turn on the MOSFET in the absence of an input signal and turning off the MOSFET by a photodetection output in the presence of an input signal so as to reduce the power consumption. CONSTITUTION:When no input signal is supplied, a LED 1 is not lighted and a PVD(photo voltaic diode) 2 applies no photodetection voltage. Thus, a transistor(TR) 4 is turned off, a voltage V of a battery 5 is fed to a gate of a MOSFET 7 via a resistor 6 to turn on the MOSFET 7. When an input signal is fed, the LED 1 is lighted and the light from the LED 1 is received by the PVD 2, the PVD 2 applies a photodetection voltage and since the photodetection voltage is applied to a base of the TR 4, the TR 4 is turned on and the gate of the MOSFET 7 is brought into a low potential to turn off the MOSFET 7.
JP62200388A 1987-08-11 1987-08-11 Solid-state relay Pending JPS6444120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62200388A JPS6444120A (en) 1987-08-11 1987-08-11 Solid-state relay

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200388A JPS6444120A (en) 1987-08-11 1987-08-11 Solid-state relay

Publications (1)

Publication Number Publication Date
JPS6444120A true JPS6444120A (en) 1989-02-16

Family

ID=16423495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200388A Pending JPS6444120A (en) 1987-08-11 1987-08-11 Solid-state relay

Country Status (1)

Country Link
JP (1) JPS6444120A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05191248A (en) * 1992-01-14 1993-07-30 Matsushita Electric Works Ltd Optical coupling relay circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05191248A (en) * 1992-01-14 1993-07-30 Matsushita Electric Works Ltd Optical coupling relay circuit

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