JPS6444039A - Dielectric isolation substrate - Google Patents
Dielectric isolation substrateInfo
- Publication number
- JPS6444039A JPS6444039A JP19977187A JP19977187A JPS6444039A JP S6444039 A JPS6444039 A JP S6444039A JP 19977187 A JP19977187 A JP 19977187A JP 19977187 A JP19977187 A JP 19977187A JP S6444039 A JPS6444039 A JP S6444039A
- Authority
- JP
- Japan
- Prior art keywords
- region
- island
- islands
- single crystalline
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE:To eliminate an electrostatic coupling between single crystal islands of a dielectric isolation substrate by causing a part of a support layer of the substrate form single crystals entirely over a thicknesswise direction, surrounding the single crystalline island regions with the single crystallized region, and electrically shielding the single crystal island region of element forming regions. CONSTITUTION:Most of a single crystalline silicon island region 6 for forming an integrated circuit element is buried with single crystalline silicon of the composing material of a whole support layer 4, and a single crystalline silicon region 7 is formed entirely in a thicknesswise direction on the intermediate region of the islands 6 and 6. The resistivity of the region 7 is remarkably larger than that of a polycrystalline region due to the facts that grain boundaries like in other polycrystalline region are not provided in the region 7 and an impurity is doped. The region 7 is so formed as to surround the islands 6. Thus, an electrostatic coupling between the island regions of the substrate can be reduced to improve the element characteristics of an integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19977187A JPS6444039A (en) | 1987-08-12 | 1987-08-12 | Dielectric isolation substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19977187A JPS6444039A (en) | 1987-08-12 | 1987-08-12 | Dielectric isolation substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6444039A true JPS6444039A (en) | 1989-02-16 |
Family
ID=16413341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19977187A Pending JPS6444039A (en) | 1987-08-12 | 1987-08-12 | Dielectric isolation substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6444039A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100892226B1 (en) * | 2001-07-23 | 2009-04-09 | 에이저 시스템즈 가디언 코포레이션 | Method and structure for DC and RF shielding of integrated circuits |
-
1987
- 1987-08-12 JP JP19977187A patent/JPS6444039A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100892226B1 (en) * | 2001-07-23 | 2009-04-09 | 에이저 시스템즈 가디언 코포레이션 | Method and structure for DC and RF shielding of integrated circuits |
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