JPS6443961A - Charged beam device - Google Patents

Charged beam device

Info

Publication number
JPS6443961A
JPS6443961A JP19803787A JP19803787A JPS6443961A JP S6443961 A JPS6443961 A JP S6443961A JP 19803787 A JP19803787 A JP 19803787A JP 19803787 A JP19803787 A JP 19803787A JP S6443961 A JPS6443961 A JP S6443961A
Authority
JP
Japan
Prior art keywords
lenses
lsi
magnetic field
electron beams
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19803787A
Other languages
Japanese (ja)
Inventor
Hideo Todokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19803787A priority Critical patent/JPS6443961A/en
Publication of JPS6443961A publication Critical patent/JPS6443961A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to carry out the ion etching, the membrane formation in the chemical vapor reaction, and the potential measurement in an LSI with electron beams, by providing object lenses of the electrostatic type and the magnetic field type to enable the deposition to and the drawing from the optical axis. CONSTITUTION:Object lenses including electrostatic lenses 14 to 16 and a magnetic field lens 35 are provided in the same vacuum, and a converting function to use the electrostatic lenses to focus ion beams and the magnetic field lens to focus electron beams is arranged. By rotating a table 41 up to stoppers 42 and 43 around a shaft 40 as the center, the magnetic lens 35 and the Einzel lenses 14 to 16 are made to exchange each other easily. As a result, the partial removal of PSG covering the surface of an LSI to be measured with ion beams, the formation of the metallic measuring pad in the chemical vapor reaction, and the voltage measurement in the LSI with electron beams can be carried out continuously in the same mirror body.
JP19803787A 1987-08-10 1987-08-10 Charged beam device Pending JPS6443961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19803787A JPS6443961A (en) 1987-08-10 1987-08-10 Charged beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19803787A JPS6443961A (en) 1987-08-10 1987-08-10 Charged beam device

Publications (1)

Publication Number Publication Date
JPS6443961A true JPS6443961A (en) 1989-02-16

Family

ID=16384488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19803787A Pending JPS6443961A (en) 1987-08-10 1987-08-10 Charged beam device

Country Status (1)

Country Link
JP (1) JPS6443961A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334663A (en) * 2001-03-09 2002-11-22 Vacuum Products Kk Charged particle generating device and charged particle generating method
JP2017135046A (en) * 2016-01-29 2017-08-03 株式会社荏原製作所 Inspection apparatus
US9824849B2 (en) 2013-01-18 2017-11-21 Nuflare Technology, Inc. Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method
JP2019114567A (en) * 2009-11-06 2019-07-11 株式会社日立ハイテクノロジーズ Ion beam apparatus and method for analyzing sample

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334663A (en) * 2001-03-09 2002-11-22 Vacuum Products Kk Charged particle generating device and charged particle generating method
JP2019114567A (en) * 2009-11-06 2019-07-11 株式会社日立ハイテクノロジーズ Ion beam apparatus and method for analyzing sample
US9824849B2 (en) 2013-01-18 2017-11-21 Nuflare Technology, Inc. Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method
JP2017135046A (en) * 2016-01-29 2017-08-03 株式会社荏原製作所 Inspection apparatus

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