JPS644340B2 - - Google Patents

Info

Publication number
JPS644340B2
JPS644340B2 JP13131280A JP13131280A JPS644340B2 JP S644340 B2 JPS644340 B2 JP S644340B2 JP 13131280 A JP13131280 A JP 13131280A JP 13131280 A JP13131280 A JP 13131280A JP S644340 B2 JPS644340 B2 JP S644340B2
Authority
JP
Japan
Prior art keywords
circuit
emitter
emitter follower
gate array
array type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13131280A
Other languages
Japanese (ja)
Other versions
JPS5756945A (en
Inventor
Masao Nakaya
Kenji Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13131280A priority Critical patent/JPS5756945A/en
Publication of JPS5756945A publication Critical patent/JPS5756945A/en
Publication of JPS644340B2 publication Critical patent/JPS644340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11801Masterslice integrated circuits using bipolar technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Description

【発明の詳細な説明】 この発明はゲートアレイ形マスタスライス集積
回路に係り、特にその出力エミツタホロワ回路に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gate array type master slice integrated circuit, and particularly to an output emitter follower circuit thereof.

第1図はこのような論理回路の一例を示す回路
図で、出力回路にエミツタホロワ回路を有する
CML(Current mode logic)回路を示す。図に
おいて、1a,1bおよび1cはこれを構成する
トランジスタ、2は共通のエミツタ抵抗、3はト
ランジスタ1aおよび1bの共通のコレクタ抵
抗、4はトランジスタ1cのコレクタ抵抗、5は
エミツタホロワ用トランジスタ、6はそのエミツ
タ抵抗、7aおよび7bはそれぞれトランジスタ
1aおよび1bのベースに接続された論理入力端
子、8はトランジスタ1cのベースに接続された
基準電圧入力端子、9はコレクタ電圧VCC供給端
子、10はエミツタ電圧VEE供給端子、11はエ
ミツタホロワ出力端子であり、この回路の論理動
作は周知であるので説明を省略する。
Figure 1 is a circuit diagram showing an example of such a logic circuit, which has an emitter follower circuit in its output circuit.
This shows a CML (Current mode logic) circuit. In the figure, 1a, 1b and 1c are transistors that constitute this, 2 is a common emitter resistance, 3 is a common collector resistance of transistors 1a and 1b, 4 is a collector resistance of transistor 1c, 5 is an emitter follower transistor, and 6 is a common emitter resistance. Its emitter resistors, 7a and 7b are logic input terminals connected to the bases of transistors 1a and 1b, respectively, 8 is a reference voltage input terminal connected to the base of transistor 1c, 9 is a collector voltage V CC supply terminal, and 10 is an emitter resistor. The voltage V EE supply terminal 11 is an emitter follower output terminal, and since the logic operation of this circuit is well known, the explanation will be omitted.

ところで、従来のゲートアレイ形集積回路にお
いて上記従来の回路ではエミツタホロワ回路のエ
ミツタ抵抗6の値が一定で電流駆動能力が一定で
あるので、負荷回路の容量値によつてこの論理回
路の動作遅延時間に差異を生じ、論理設計に当つ
て支障があつた。電流駆動能力の異つた論理回路
を幾種類かを予め作り込んで適当に組合わせて使
用することも考えられるが、組み込んだ回路の如
何によつては無駄を生じたり、能力不足になつた
りする欠点があつた。
By the way, in the conventional gate array type integrated circuit, the value of the emitter resistor 6 of the emitter follower circuit is constant and the current drive capability is constant, so the operation delay time of this logic circuit depends on the capacitance value of the load circuit. This caused a difference in logic design, which caused problems in logical design. It is possible to create several types of logic circuits with different current drive capabilities in advance and use them in appropriate combinations, but depending on the type of circuits that are incorporated, this may result in waste or lack of capacity. There were flaws.

この発明は以上のような点に鑑みてなされたも
ので、基本ゲート回路自体は同一のものを配列
し、エミツタホロワ回路部のエミツタ抵抗を配線
工程によつてその抵抗値を変更して、その負荷回
路の容量値に応じてエミツタホロワ回路の電流値
を変えられるようにすることによつて、動作遅延
時間のばらつきを小さくできるゲートアレイ形集
積回路を得ることを目的としている。
This invention was made in view of the above points, and the basic gate circuits themselves are the same, and the resistance value of the emitter follower circuit section is changed through the wiring process, so that the load can be improved. The object of the present invention is to obtain a gate array type integrated circuit that can reduce variations in operation delay time by making it possible to change the current value of an emitter follower circuit depending on the capacitance value of the circuit.

第2図はこの発明の一実施例を示す回路図で、
従来例と同等部分は同一符号で示し、その説明を
省略する。出力段としてのエミツタホロワ回路部
のエミツタ抵抗を6A,6Bおよび6Cの3つの
部分に分割して、それぞれの下端から端子12
A,12Bおよび12Cを引出し、エミツタ電源
端子10につながつた端子13との間の接続如何
によつてエミツタ抵抗値を変更できるようになつ
ている。
FIG. 2 is a circuit diagram showing an embodiment of this invention.
Portions equivalent to those in the conventional example are indicated by the same reference numerals, and their explanation will be omitted. The emitter resistance of the emitter follower circuit section as an output stage is divided into three parts 6A, 6B and 6C, and the terminal 12 is connected from the bottom end of each part.
A, 12B and 12C are drawn out and the emitter resistance value can be changed by connecting them to a terminal 13 connected to an emitter power supply terminal 10.

第3図はこの発明の実施例を示す回路図で、こ
の実施例ではエミツタホロワ回路のエミツタ抵抗
を6α,6βおよび6γの互いに独立した抵抗で
構成し、それぞれの下端から端子12α,12β
および12γを引出し、端子13との間の接続の
如何によつてどの抵抗を選ぶか、更には並列接続
の組合わせで、各種のエミツタ抵抗値が得られ
る。
FIG. 3 is a circuit diagram showing an embodiment of the present invention. In this embodiment, the emitter resistors of the emitter follower circuit are composed of mutually independent resistors 6α, 6β and 6γ, and terminals 12α and 12β are connected from the lower ends of each.
and 12γ, and by selecting which resistor depending on the connection with the terminal 13, and by combining parallel connections, various emitter resistance values can be obtained.

従つて、上記各実施例とも出力端子11につな
がる負荷回路の容量値が大きいかまたは小さいか
によつて、それぞれエミツタ抵抗値を小さくまた
は大きく設定すればよい。
Therefore, in each of the above embodiments, the emitter resistance value may be set to be small or large depending on whether the capacitance value of the load circuit connected to the output terminal 11 is large or small.

なお、上記説明では出力回路にエミツタホロワ
回路を有するCML回路について述べたが、CML
回路に限定される理由は全くなく、出力回路にエ
ミツタホロワ回路を有する論理回路に広くこの発
明は適用できる。更に、エミツタ抵抗は3分割し
た例を示したが、この分割数は3分割に限るもの
でないことは自明である。
In addition, in the above explanation, we talked about a CML circuit that has an emitter follower circuit in the output circuit, but CML
There is no reason to limit the present invention to circuits, and the present invention can be widely applied to logic circuits having emitter follower circuits in their output circuits. Further, although an example has been shown in which the emitter resistor is divided into three parts, it is obvious that this number of divisions is not limited to three parts.

以上説明したように、この発明になる論理回路
ではその出力回路を構成するエミツタホロワ回路
のエミツタ抵抗を複数個に分割しておき、配線の
如何によつてエミツタ抵抗値を負荷回路の容量値
に応じて設定できるようにしたので、回路の動作
遅延時間のばらつきを小さくすることがき、論理
設計が容易になる。
As explained above, in the logic circuit according to the present invention, the emitter resistance of the emitter follower circuit constituting the output circuit is divided into a plurality of parts, and the emitter resistance value is adjusted according to the capacitance value of the load circuit depending on the wiring. Since it is possible to set the delay time of the circuit, it is possible to reduce the variation in the operation delay time of the circuit, making logic design easier.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の論理回路例を示す回路図、第2
図はこの発明の一実施例を示す回路図、第3図は
この発明の他の実施例を示す回路図である。 図において、5はエミツタホロワ用トランジス
タ、6A,6B,6C,6α,6β,6γはエミ
ツタ抵抗を構成する部分抵抗、12A,12B,
12C,12α,12β,12γは端子、13は
エミツタ電圧供給線端子である。なお、図中同一
符号は同一または相当部分を示す。
Figure 1 is a circuit diagram showing an example of a conventional logic circuit; Figure 2 is a circuit diagram showing an example of a conventional logic circuit;
The figure is a circuit diagram showing one embodiment of the invention, and FIG. 3 is a circuit diagram showing another embodiment of the invention. In the figure, 5 is an emitter follower transistor, 6A, 6B, 6C, 6α, 6β, 6γ are partial resistors constituting the emitter resistor, 12A, 12B,
12C, 12α, 12β, and 12γ are terminals, and 13 is an emitter voltage supply line terminal. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 1 配線工程を除く工程まで共通に形成され、上
記配線工程のみを変えることによつて各種論理回
路を構成するゲートアレイ形マスタスライス集積
回路であつて、その論理ゲートがCML回路で構
成されておりスイツチング部と出力段としてのエ
ミツタフオロワ部とを有するゲートアレイ形マス
タスライス集積回路において、上記エミツタフオ
ロワ部のエミツタ抵抗を複数個の部分抵抗で構成
し、上記配線工程で配線パターンを変えることに
よつて上記エミツタフオロワ部の電流を変え得る
ようにしたことを特徴とするゲートアレイ形マス
タスライス集積回路。
1. A gate array type master slice integrated circuit that is formed in common up to the process excluding the wiring process and that configures various logic circuits by changing only the wiring process, and the logic gates are composed of CML circuits. In a gate array type master slice integrated circuit having a switching section and an emitter follower section as an output stage, the emitter resistor of the emitter follower section is composed of a plurality of partial resistors, and the wiring pattern is changed in the wiring process to achieve the above A gate array type master slice integrated circuit characterized in that the current in an emitter follower section can be changed.
JP13131280A 1980-09-19 1980-09-19 Logic circuit Granted JPS5756945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13131280A JPS5756945A (en) 1980-09-19 1980-09-19 Logic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13131280A JPS5756945A (en) 1980-09-19 1980-09-19 Logic circuit

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP32178189A Division JPH02216865A (en) 1989-12-11 1989-12-11 Gate array type master slice integrated circuit
JP32178289A Division JPH02216866A (en) 1989-12-11 1989-12-11 Gate array type master slice integrated circuit

Publications (2)

Publication Number Publication Date
JPS5756945A JPS5756945A (en) 1982-04-05
JPS644340B2 true JPS644340B2 (en) 1989-01-25

Family

ID=15055006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13131280A Granted JPS5756945A (en) 1980-09-19 1980-09-19 Logic circuit

Country Status (1)

Country Link
JP (1) JPS5756945A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029355A (en) * 1988-02-03 1990-01-12 Toshihiko Oba Boiling caldron for production of soybean curd
JPH04190044A (en) * 1990-11-01 1992-07-08 Toshihiko Oba Liquid heater device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172249A (en) * 1983-03-18 1984-09-28 Nec Corp Monolithic integrated circuit
JPS60124122A (en) * 1983-12-09 1985-07-03 Fujitsu Ltd Logical gate circuit
JPS62171226A (en) * 1986-01-22 1987-07-28 Nec Corp Output circuit
JPH0294708A (en) * 1988-09-30 1990-04-05 Hitachi Ltd Semiconductor integrated circuit
JP2863684B2 (en) * 1993-03-09 1999-03-03 株式会社日立製作所 Semiconductor integrated circuit delay optimization system and delay optimization method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435474B2 (en) * 1973-03-26 1979-11-02
JPS50134356A (en) * 1974-04-10 1975-10-24

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029355A (en) * 1988-02-03 1990-01-12 Toshihiko Oba Boiling caldron for production of soybean curd
JPH04190044A (en) * 1990-11-01 1992-07-08 Toshihiko Oba Liquid heater device

Also Published As

Publication number Publication date
JPS5756945A (en) 1982-04-05

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