JPS6439380A - Microwave plasma treating equipment - Google Patents

Microwave plasma treating equipment

Info

Publication number
JPS6439380A
JPS6439380A JP19591887A JP19591887A JPS6439380A JP S6439380 A JPS6439380 A JP S6439380A JP 19591887 A JP19591887 A JP 19591887A JP 19591887 A JP19591887 A JP 19591887A JP S6439380 A JPS6439380 A JP S6439380A
Authority
JP
Japan
Prior art keywords
gas
chamber
vacuum
perforated board
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19591887A
Other languages
Japanese (ja)
Inventor
Naoki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19591887A priority Critical patent/JPS6439380A/en
Publication of JPS6439380A publication Critical patent/JPS6439380A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent decomposition product from attaching to a quartz chamber and to improve the reproducibility of working by making up a sealed quartz chamber in vacuum of a double structure and injecting N2 gas from a perforated board of the inside part. CONSTITUTION:A reaction gas inlet 12 and a vacuum air outlet 13 are fitted in a vacuum chamber 11 and a sample rack 21 is arranged in the vacuum chamber 11 to mount a treatment substrate 22. A quartz chamber 14 is made up of a double structure, a perforated board 16 is provided in the inside part, arranged above the vacuum chamber 11 and insulated in vacuum. By this constitution, N2 gas and SiH4 gas are supplied respectively from a gas supply port 15 and a gas inlet 12, and applying a resonance with a magnetic field in an axial direction formed by microwave introduced from a microwave inlet 18 and a magnet coil 20, N2 gas is discharged and decomposed to accumulate nitrided film on a treated substrate 22. At this time, since N2 gas is jetted from the perforated board 16 in the quartz chamber 14, the decomposed SiH4 gas near the chamber 14 is diluted to reduce the accumulation of film to the inside of the chamber 14.
JP19591887A 1987-08-05 1987-08-05 Microwave plasma treating equipment Pending JPS6439380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19591887A JPS6439380A (en) 1987-08-05 1987-08-05 Microwave plasma treating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19591887A JPS6439380A (en) 1987-08-05 1987-08-05 Microwave plasma treating equipment

Publications (1)

Publication Number Publication Date
JPS6439380A true JPS6439380A (en) 1989-02-09

Family

ID=16349148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19591887A Pending JPS6439380A (en) 1987-08-05 1987-08-05 Microwave plasma treating equipment

Country Status (1)

Country Link
JP (1) JPS6439380A (en)

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