JPS6439082A - Blue-light emitting display element - Google Patents

Blue-light emitting display element

Info

Publication number
JPS6439082A
JPS6439082A JP19563587A JP19563587A JPS6439082A JP S6439082 A JPS6439082 A JP S6439082A JP 19563587 A JP19563587 A JP 19563587A JP 19563587 A JP19563587 A JP 19563587A JP S6439082 A JPS6439082 A JP S6439082A
Authority
JP
Japan
Prior art keywords
semiconductor
conductivity type
light emitting
barrier
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19563587A
Other languages
English (en)
Inventor
Noboru Ebara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP19563587A priority Critical patent/JPS6439082A/ja
Publication of JPS6439082A publication Critical patent/JPS6439082A/ja
Priority to US07/620,455 priority patent/US5097298A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H01L33/0058—Processes for devices with an active region comprising only group IV elements comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
JP19563587A 1987-08-05 1987-08-05 Blue-light emitting display element Pending JPS6439082A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP19563587A JPS6439082A (en) 1987-08-05 1987-08-05 Blue-light emitting display element
US07/620,455 US5097298A (en) 1987-08-05 1990-11-30 Blue light emitting display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19563587A JPS6439082A (en) 1987-08-05 1987-08-05 Blue-light emitting display element

Publications (1)

Publication Number Publication Date
JPS6439082A true JPS6439082A (en) 1989-02-09

Family

ID=16344444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19563587A Pending JPS6439082A (en) 1987-08-05 1987-08-05 Blue-light emitting display element

Country Status (2)

Country Link
US (1) US5097298A (ja)
JP (1) JPS6439082A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031846A (ja) * 2001-07-19 2003-01-31 Tohoku Techno Arch Co Ltd シリコン基板上に形成された酸化亜鉛半導体部材

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198690A (en) * 1990-11-26 1993-03-30 Sharp Kabushiki Kaisha Electroluminescent device of II-IV compound semiconductor
JPH04192586A (ja) * 1990-11-27 1992-07-10 Pioneer Electron Corp 半導体発光素子
EP0576566B1 (en) * 1991-03-18 1999-05-26 Trustees Of Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
WO1993023882A1 (en) * 1992-05-19 1993-11-25 California Institute Of Technology Wide band-gap semiconductor light emitters
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
JP3399392B2 (ja) 1999-02-19 2003-04-21 株式会社村田製作所 半導体発光素子、およびその製造方法
WO2002023640A1 (en) * 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
WO2002097903A1 (en) * 2001-05-30 2002-12-05 Kim, Young-Chang Short wavelength zno light emitting device and the manufacturing method thereof
JP2003273397A (ja) * 2002-03-19 2003-09-26 Fuji Xerox Co Ltd 半導体発光素子、半導体複合素子、及び半導体発光素子の製造方法
US7151338B2 (en) * 2003-10-02 2006-12-19 Hewlett-Packard Development Company, L.P. Inorganic electroluminescent device with controlled hole and electron injection
US8018019B2 (en) * 2007-05-08 2011-09-13 University Of Rochester Space-charge-free semiconductor and method
US20090020153A1 (en) * 2007-07-20 2009-01-22 Chien-Min Sung Diamond-Like Carbon Electronic Devices and Methods of Manufacture

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284439A (ja) * 1961-10-20
US3330983A (en) * 1962-07-06 1967-07-11 Gen Electric Heterojunction electroluminescent devices
US3488542A (en) * 1967-09-01 1970-01-06 William I Lehrer Light emitting heterojunction semiconductor devices
US3683240A (en) * 1971-07-22 1972-08-08 Rca Corp ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN
US4081764A (en) * 1972-10-12 1978-03-28 Minnesota Mining And Manufacturing Company Zinc oxide light emitting diode
US4409605A (en) * 1978-03-16 1983-10-11 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
EP0096509A3 (en) * 1982-06-09 1986-02-26 National Research Development Corporation Electroluminescent devices
US4650558A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Semiconductor electrode with improved photostability characteristics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031846A (ja) * 2001-07-19 2003-01-31 Tohoku Techno Arch Co Ltd シリコン基板上に形成された酸化亜鉛半導体部材

Also Published As

Publication number Publication date
US5097298A (en) 1992-03-17

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