JPS6439019A - Surface modification cvd method - Google Patents
Surface modification cvd methodInfo
- Publication number
- JPS6439019A JPS6439019A JP19568387A JP19568387A JPS6439019A JP S6439019 A JPS6439019 A JP S6439019A JP 19568387 A JP19568387 A JP 19568387A JP 19568387 A JP19568387 A JP 19568387A JP S6439019 A JPS6439019 A JP S6439019A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- atom
- forming
- substrate
- sih3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To control the film growth speed distribution and make a cavity-free flat filling by locally changing the adhesion probability to the surface of active chemical species which serve as a material for a deposited film and transforming the surface quality thereof, and by forming the deposited film onto the transformed surface of the processed material. CONSTITUTION:SiH4 which is supplied from a gas supply inlet is decomposed by a laser beam 2, which, transformed into SiH2 and SiH3, fills a thin groove located on a substrate 5. At the same time, N2O, which is supplied from the gas supply inlet is decomposed by a laser beam 8, and a radical of atom O which has been generated from the decomposition is adsorbed onto the surface of the thin groove located on the substrate 5. The adhesion probability of atom O to a silicon substrate of the atom O radical is approximately 1, therefore the surface oxidation speed is in proportion to the reaching frequency of atom O, resulting in forming an oxide film layer 18 which is thick above the groove and think below the groove. According to the constitution, the surface oxidation rate varies to a great degree above and below the groove, whereby SiH2 and SiH3 are selectively deposited from below the groove by forming an Si layer 17. This makes it possible to achieve a cavity-free flat filling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19568387A JPS6439019A (en) | 1987-08-04 | 1987-08-04 | Surface modification cvd method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19568387A JPS6439019A (en) | 1987-08-04 | 1987-08-04 | Surface modification cvd method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6439019A true JPS6439019A (en) | 1989-02-09 |
Family
ID=16345263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19568387A Pending JPS6439019A (en) | 1987-08-04 | 1987-08-04 | Surface modification cvd method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6439019A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004007409A1 (en) * | 2004-02-16 | 2005-09-08 | Infineon Technologies Ag | Semiconductor structure manufacturing method especially for deep trench memory circuits made with sub-100 nm technology, whereby doped silicon is deposited over the trench structure using on over-conforming separation method |
-
1987
- 1987-08-04 JP JP19568387A patent/JPS6439019A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004007409A1 (en) * | 2004-02-16 | 2005-09-08 | Infineon Technologies Ag | Semiconductor structure manufacturing method especially for deep trench memory circuits made with sub-100 nm technology, whereby doped silicon is deposited over the trench structure using on over-conforming separation method |
| DE102004007409B4 (en) * | 2004-02-16 | 2006-06-01 | Infineon Technologies Ag | Non-conforming manufacturing method for a semiconductor structure |
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