JPS6433091A - Production of compound semiconductor single crystal - Google Patents

Production of compound semiconductor single crystal

Info

Publication number
JPS6433091A
JPS6433091A JP18896387A JP18896387A JPS6433091A JP S6433091 A JPS6433091 A JP S6433091A JP 18896387 A JP18896387 A JP 18896387A JP 18896387 A JP18896387 A JP 18896387A JP S6433091 A JPS6433091 A JP S6433091A
Authority
JP
Japan
Prior art keywords
boat
seed
single crystal
compd
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18896387A
Other languages
Japanese (ja)
Inventor
Kiyoteru Yoshida
Toshio Kikuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP18896387A priority Critical patent/JPS6433091A/en
Publication of JPS6433091A publication Critical patent/JPS6433091A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain single crystal having face (100) vertical to a longitudinal axis by using a boat having a prescribed shape and providing a seed at a prescribed angle in a method for growing crystal while bringing the melt of a compd. semiconductor in the boat into contact with the seed. CONSTITUTION:Such a boat 1 that the cross section of the lower half part is made to a semicircular shape and the upper end is curved so as to enter the inside therefrom is prepared. Single crystal 5 of a compd. semiconductor is grown by bringing a seed 2 placed at the tip of the boat 1 into contact with the melt 3 of the compd. semiconductor. This seed 2 is placed so that a seeding face (111) is slanted at 54.7 deg. for a vertical face P crossing the boat 1. Crystal 5 is grown while keeping the solid-liquid interface at angle (theta) of 54.7 deg. for the vertical face P.
JP18896387A 1987-07-30 1987-07-30 Production of compound semiconductor single crystal Pending JPS6433091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18896387A JPS6433091A (en) 1987-07-30 1987-07-30 Production of compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18896387A JPS6433091A (en) 1987-07-30 1987-07-30 Production of compound semiconductor single crystal

Publications (1)

Publication Number Publication Date
JPS6433091A true JPS6433091A (en) 1989-02-02

Family

ID=16232996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18896387A Pending JPS6433091A (en) 1987-07-30 1987-07-30 Production of compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS6433091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012147472A1 (en) * 2011-04-27 2012-11-01 住友電気工業株式会社 Compound semiconductor single crystal substrate and method for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012147472A1 (en) * 2011-04-27 2012-11-01 住友電気工業株式会社 Compound semiconductor single crystal substrate and method for manufacturing same

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